Dependence of the resistivity and hall coefficient in thin metallic films on the thickness and the transverse magnetic field
TL;DR: In this paper, the authors derived analytical equations for the conductivity and the Hall coefficient of thin metallic films subjected to a longitudinal electric field and a transverse magnetic field from previously proposed general expressions.
Abstract: New analytical equations for the conductivity and the Hall coefficient of thin metallic films subjected to a longitudinal electric field and a transverse magnetic field are derived from previously proposed general expressions. Effects of electronic scattering at external surfaces and due to the magnetic field can be expressed separately. Conclusions are derived about the slight size effect in the Hall coefficient and its temperature dependence, which agree with previous experiments. A correlation between the size effects in the Hall coefficient and the product of the resistivity and the temperature coefficient of resistivity is proposed.
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TL;DR: In this article, the resistivity measurements on pure and gas-covered silver films were discussed, and the complicated band structure of the adsorbate complex including gas-gas interaction was described.
Abstract: Publisher Summary This chapter discusses the resistivity measurements on pure and gas-covered silver films. Electrical resistivity—being an easily monitored property—has been extensively used for the characterization of thin metal films, which may play an important role in such diverse technologies as catalysis, corrosion prevention, microelectronics, optical coatings, and surface treatment. Large-angle grain boundaries—possibly under strains and characterized by built-in foreign molecules stemming from the residual gas—are decisive for conductivity in the films. The induced changes in the electronic density of the states of metal and adsorbate are amenable to measurements by means of high-resolution photoelectron-spectroscopic methods. This can lead to a better theoretical understanding of the influence of gas adsorption on resistivity. The complicated band structure of the adsorbate complex including gas–gas interaction should be an integral part of the description.
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TL;DR: In this paper, general expressions for the electrical conductivity, the temperature coefficient of resistivity, thermoelectric power, the thermal conductivity and the Hall coefficient of thin metal films are proposed.
Abstract: General expressions for the electrical conductivity, the temperature coefficient of resistivity, the thermoelectric power, the thermal conductivity and the Hall coefficient of thin metal films are proposed. The basic functions are extensively tabulated, and linearized general expressions are obtained in this way; they are in agreement with approximate equations obtained previously. Physical consequences are deduced in good agreement with previous data.
10 citations
TL;DR: Etude de l'effet Hall pour des couches de MnBi de 40 a 150 nm d'epaisseur et de differentes compositions as discussed by the authors, et.
Abstract: Etude de l'effet Hall pour des couches de MnBi de 40 a 150 nm d'epaisseur et de differentes compositions
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TL;DR: In this paper, a critical analysis of the observed size effects in all cases depart markedly from the predictions of the Fuchs-Sondheimer theory (and also that of the Mayadas-Shatzkes theory which takes into account the grain boundary surface scattering).
Abstract: The thickness dependence at 300 and 80 K of the electrical resistivity and its temperature coefficient, Hall coefficient, mobility, and thermoelectric power of as‐deposited and annealed thin (< 1000 A) evaporated polycrystalline copper films and films deposited at elevated temperatures have been studied. All transport parameters in carefully prepared and well‐characterized films exhibit monotonically increasing size effects with decreasing film thickness. Both annealing and deposition at elevated temperatures cause considerable reduction of the ’’apparent’’ size effects in all the transport parameters of the room‐temperature deposited films. A critical analysis of the observed size effects shows that the data in all cases depart markedly from the predictions of the Fuchs‐Sondheimer theory (and also that of the Mayadas‐Shatzkes theory which takes into account the grain boundary surface scattering). The departure from theory is different for each transport parameter. The annealing studies show that the enhanced size effects are due to the presence of a large concentration of structural defects in the films. The observed behavior may be understood by assuming the large concentration of point and/or line defects to decrease with film thickness and with annealing as well as deposition of films at elevated temperatures. The thermopower data suggest strongly that the large concentration of defects causes distortion of the Fermi surface and thereby a strong energy dependence of the mfp or relaxation time at the Fermi surface.
89 citations
TL;DR: In this paper, the dependence of the resistivity and the Hall effect of copper films on the method of film preparation and the film thickness has been studied before and after adsorption of carbon monoxide.
Abstract: The dependence of the resistivity and the Hall effect of copper films on the method of film preparation and the film thickness has been studied before and after adsorption of carbon monoxide. It is shown that the Fuchs-Sondheimer theory does not adequately predict the dependence of resistivity on film thickness, because thickness-dependent disorder must be considered. It is further shown in the discussion of the Hall effect that scattering anisotropy must be taken into account. The influence of the adsorbed carbon monoxide on the resistivity and Hall coefficient can be ascribed to the scattering effect at the adsorbed molecules.
47 citations
TL;DR: In this paper, in situ measurements of Hall effect, magnetoresistance, resistivity, and temperature coefficient of resistivity of bismuth films (700-2600 A) were carried out in a specially designed evacuation chamber.
Abstract: In situ measurements of Hall effect, magnetoresistance, resistivity, and temperature coefficient of resistivity of bismuth films (700–2600 A) were carried out in a specially designed evacuation chamber. The films were deposited on a glass substrate at 150°C and at a pressure of ∼10−6 Torr. The values of the mean free path and specular scattering parameter obtained were 14100 A and 0.5, respectively. The effect of the grain boundary on the electrical resistivity was also accounted for in the light of the Mayadas‐Shatzkes theory.
40 citations
TL;DR: In this article, the authors studied bismuth polycrystalline films evaporated onto substrates of Corning 7059 glass to thickness d of 200-3000 A. From the data obtained, the concentrations of electrons (n) and of holes (p) as well as their mobilities μn and μp were determined without assuming that n = p.
Abstract: We studied bismuth polycrystalline films evaporated onto substrates of Corning 7059 glass to thicknesses d of 200–3000 A. The resistivity ϱ, Hall coefficient RH, magnetoresistance Δϱ/ϱ and thermoelectric power α for the temperature range 80–293 K were measured. From the data obtained, the concentrations of electrons (n) and of holes (p) as well as their mobilities μn and μp were determined without assuming that n = p. The dependences n = ƒ(d) and ϱ = ƒ(d) at a temperature of 90 K confirm the pertinence of the film model according to which the wavefunction of the electrons satisfies a boundary condition in the form ∇Ψ = 0 on the film surface.
40 citations
TL;DR: In this article, the activation energy for the associated recovery process has been obtained from the observed isothermal and isochronal changes in the resistance of the films, which increases from a value of 0.7 eV at 2000 A to 1.4 EV at 180 A for room-temperature-deposited Cu films.
Abstract: Kinetics of annealing of the electrical resistivity (ρ), Hall coefficient RH, mobility μ, and thermoelectric power TEP of thin (160–5000 A) copper films deposited at temperatures ranging from 80 to 600 K have been studied. The activation energy for the associated recovery process has been obtained from the observed isothermal and isochronal changes in the resistance of the films. This energy increases from a value of 0.7 eV at 2000 A to 1.4 eV at 180 A for room‐temperature‐deposited Cu films. Changes in ρ, RH, and μ on annealing are found to decrease with film thickness and deposition and annealing temperatures. On the other hand, changes in TEP due to annealing increase with film thickness up to 3000 A; the rate of change depends sensitively on deposition temperature. With decreasing temperature of deposition, the reduction in TEP occurs at successively higher annealing temperature. Annealing does not affect the temperature dependence of RH and TEP. These results, together with the information on the mic...
38 citations