Proceedings ArticleDOI
Dependence of ultra-thin gate oxide reliability on surface cleaning approach
Gao Wenyu,Liu Zhongli,He Zhijing +2 more
- pp 291-294
Reads0
Chats0
TLDR
In this paper, the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides was investigated, and it was demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4/H/sub 1/O/Sub 2/(SPM) solution prior to oxidization provides better oxide integrity than both HF-based solution dipping and preoxide growing in RCA SC1 or SC2 solutions.Abstract:
In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4//H/sub 2/O/sub 2/(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.read more
References
More filters
Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
Journal ArticleDOI
Dependence of thin-oxide films quality on surface microroughness
TL;DR: In this article, the effects of silicon surface microroughness on electrical properties of thin-oxide films, such as breakdown electric field intensity (E/sub BD/) and time-dependent dielectric breakdown (Q/subBD/), have been studied, where the MICROUGE of silicon and silicon dioxide surfaces are evaluated by the scanning tunneling microscope (STM) and the atomic force microscope (AFM), respectively.
Journal ArticleDOI
Ultraclean, integrated processing of thermal oxide structures
TL;DR: In this article, the first ultraclean integrated metal-oxide-semiconductor oxide fabrication has been investigated by combining surface cleaning in inert ambient, wafer transfer through ultrahigh vacuum, and thermal oxidation in an ultra-high vacuum-based reactor.
Journal ArticleDOI
Preoxide-controlled oxidation for very thin oxide films
TL;DR: Very thin oxide films with high insulating performance and high reliability are formed by controlling preoxide growth with an ultraclean oxidation method during heating of the wafer to thermal oxidation temperature as mentioned in this paper.