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Book ChapterDOI

Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H TFT

01 Jan 2004-pp 203-239
About: The article was published on 2004-01-01. It has received 2 citations till now. The article focuses on the topics: Deposition (chemistry) & Thin-film transistor.
Citations
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Journal Article
TL;DR: In this article, the authors evaluated the field effect mobility ( µFE) for a-Si TFTs at different temperatures for aSi deposition (Tsub), and the µFE showed a maximum in the temperature range of 200~250°C.
Abstract: We evaluated the field effect mobility ( µFE) for a-Si TFTs at different temperatures for a-Si deposition (Tsub). The µFE showed a maximum in the temperature range of 200~250°C. We estimated the tail localized state distribution of the a-Si films for each Tsub value from theoretical curves modified by the measurement temperature dependence of µFE. The result of the fittings showed that the a-Si tail localized state was suppressed in the Tsub range 200~250°C.
30 Jul 1994
TL;DR: In this paper, the influences of plasma parameters on the deposition of a-Si:H film and particle growth have been studied with silane discharge using amplitude-modulated RF methods, and the results showed that high deposition rate with low particle density as well as high film quality has been realized for aSi-H film.
Abstract: The influences of plasma parameters on the deposition of a-Si:H film and particle growth have been studied with silane discharge using amplitude-modulated RF methods. Plasma parameters have been measured with the Langmuir probe system and optical emission spectrometer. Behaviors and generation processes of particles have been observed by the laser scattering method. The deposited thin film has been characterized by various techniques such as Fourier-transform infrared (FT-IR) spectrometry, ESR and the constant photocurrent method (CPM). High deposition rate with low particle density as well as high film quality has been realized for a-Si:H film by amplitude-modulated RF methods.
References
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MonographDOI
R. A. Street1
30 Aug 1991
TL;DR: In this article, the electronic density of states of amorphous silicon and their electronic states have been investigated in terms of defect reactions, thermal equilibrium and metastability, as well as their electronic properties.
Abstract: 1. Introduction 2. Growth and structure of amorphous silicon 3. The electronic density of states 4. Defects and their electronic states 5. Substitutional doping 6. Defect reactions, thermal equilibrium and metastability 7. Electronic transport 8. Recombination of excess carriers 9. Contacts, interfaces and multilayers 10. Amorphous silicon device technology.

2,003 citations

Journal ArticleDOI
TL;DR: In this article, Gas Phase Collision Processes (GPCPP) are used for DC Glow Discharges, RF Discharges and Sputtering, and Plasmas Etching.
Abstract: Gases. Gas Phase Collision Processes. Plasmas. DC Glow Discharges. RF Discharges. Sputtering. Plasma Etching. Appendices. Index.

812 citations

Journal ArticleDOI
TL;DR: In this paper, it was shown that substitutional doping of an amorphous semiconductor is possible and can provide control of the electronic properties over a wide range, which corresponds to a movement of the Fermi level of 1·2 eV.
Abstract: It is shown that substitutional doping of an amorphous semiconductor is possible and can provide control of the electronic properties over a wide range. a-Si and Ge specimens have been prepared by the decomposition of silane (or germane) in a radio-frequency (r.f.) glow discharge. Doping is achieved by adding carefully measured amounts of phosphine or diborane, between 5 × 10−6 and 10−2 parts per volume, to obtain n- or p-type specimens. The room temperature conductivity of doped a-Si specimens can be controlled reproducibly over about 10 orders of magnitude, which corresponds to a movement of the Fermi level of 1·2 eV. Ion probe analysis on phosphorus doped specimens indicates that about half the phosphine molecules in the gaseous mixture introduce a phosphorus atom into the Si random network; it is estimated that 30–40% of these will act as substitutional donors. The results also show that the number of incorporated phosphorus atoms saturates at about 3 × 1019 cm−3, roughly equal to the number ...

624 citations

Journal ArticleDOI
TL;DR: In this paper, the phase transformation mechanisms and the resulting microstructures of excimer laser-induced crystallization of amorphous Si films on SiO2 were investigated, and it was shown that the process can be characterized into two major regimes, based on the dependence of the grain size and the melt duration as a function of the incident energy density.
Abstract: We have investigated the phase transformation mechanisms and the resulting microstructures of excimer laser‐induced crystallization of amorphous Si films on SiO2. It is shown that the process can be characterized into two major regimes, based on the dependence of the grain size and the melt duration as a function of the incident energy density. It is found that at the transition between the two regimes, exceedingly large grain‐sized polycrystalline films can be obtained. We call this the super lateral growth phenomenon, and propose a model based on liquid‐phase regrowth from the residual solid seeds when near‐complete melting of the Si film occurs.

561 citations

Journal ArticleDOI
TL;DR: In this article, the formation kinetics of μc-Si:H has been investigated through the film depositions and plasma diagnoses in widely-scanned glow discharge plasma conditions; RF power density, SiH 4 /H 2 ratio and substrate temperature.
Abstract: The formation kinetics of μc-Si:H has been investigated through the film depositions and plasma diagnoses in widely-scanned glow discharge plasma conditions; RF power density, SiH 4 /H 2 ratio and substrate temperature. The roles of H and SiH x adsorbed on the surface as well as impinging ions have been discussed in relation to volume fraction and crystallite size of μc films, and continuous control of crystallite size has been demonstrated using a triode system. Hall mobility of the deposited μc-Si:H films has also been presented as a function of the volume fraction of μc.

531 citations