Book ChapterDOI
Design and Analysis of a Carrier Depletion Type PIN Phase Shifter for High Speed Operations
R. G. Jesuwanth Sugesh,A. Sivasubramanian +1 more
- pp 707-710
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TLDR
In this paper, a carrier depletion type Silicon Optical Modulator with PIN phase shifter for high speed operations was proposed, which enhances the performance of the modulator to be used for commercial applications.Abstract:
Carrier depletion type Silicon Optical Modulator with PIN phase shifter for high speed operations was proposed. The study was conducted by varying carrier concentration to identify the optimum dopant concentration for the proposed 2 mm phase shifter design. Lumerical Software tool was used for simulation analysis. For the proposed phase shifter design at 40 Gbps data rate, 22.2 dB Extinction Ratio was obtained at 0.6 Vcm with absorption loss as 3.39 dB/cm. This enhances the performance of the modulator to be used for commercial applications.read more
References
More filters
Book
Silicon Photonics Design: From Devices to Systems
TL;DR: In this article, the authors present the state-of-the-art in the field of fabless silicon photonic systems, including the following: 1.1 Optical Waveguide Mode Solver 2.2 Wave Propagation 2.3 Optoelectronic models 2.4 Microwave Modelling 2.5 Thermal Modeling 2.6 Photonic Circuit Modelling 3.7 Physical Layout 2.8 Software Tools Integration 3.4 Code Listings 4.5 Problems 4.7 Problems 5.4 Polarization 5.5 Problem 5.6 Code List
Journal ArticleDOI
Recent breakthroughs in carrier depletion based silicon optical modulators
Graham T. Reed,Goran Z. Mashanovich,Frederic Y. Gardes,Milos Nedeljkovic,Youfang Hu,David J. Thomson,Ke Li,Peter R. Wilson,Sheng-Wen Chen,Shawn S. H. Hsu +9 more
TL;DR: The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide as discussed by the authors.
Journal ArticleDOI
Low V π Silicon photonics modulators with highly linear epitaxially grown phase shifters
S. Sharif Azadeh,Florian Merget,Sebastian Romero-García,Alvaro Moscoso-Mártir,Nils von den Driesch,Juliana Müller,Siegfried Mantl,Dan Buca,Jeremy Witzens +8 more
TL;DR: Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses.
Journal ArticleDOI
Ultralow-Power (1.59 mW/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach–Zehnder Modulator and 28-nm CMOS Driver
Shinsuke Tanaka,Takasi Simoyama,Tsuyoshi Aoki,Toshihiko Mori,Shigeaki Sekiguchi,Seok-Hwan Jeong,Tatsuya Usuki,Yu Tanaka,Ken Morito +8 more
TL;DR: In this paper, a Si p-i-n-type phase shifters are directly driven with a CMOS inverter driver array to realize a low power operation, and a passive RC equalizing technique is adopted to extend the modulation bandwidth up to 20 GHz while maintaining a very compact foot print for the transmitter.
Journal ArticleDOI
High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter.
Yuriko Maegami,Guangwei Cong,Morifumi Ohno,Makoto Okano,Kazuto Itoh,Nobuhiko Nishiyama,Shigehisa Arai,Koji Yamada +7 more
TL;DR: A silicon Mach-Zehnder modulator (MZM) based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform, which can be fabricated by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer.