Design and fabrication of photonic crystal resonators for single-mode and vertical surface emission from strain-compensated quantum cascade lasers operating at 4.32 μm
About: This article is published in Applied Physics Express.The article was published on 2021-10-01. It has received None citations till now. The article focuses on the topics: Quantum cascade laser & Photonic crystal.
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TL;DR: In this paper, the authors proposed a quantum cascade laser consisting of a gain region (14) consisting of several layers (20) each including: alternating strata of a first type (28) defining each AllnAs quantum barrier and strata with injection barriers interposed between two of the layers.
Abstract: The invention concerns a quantum cascade laser comprising in particular a gain region (14) consisting of several layers (20) each including: alternating strata of a first type (28) defining each an AllnAs quantum barrier and strata of a second type (28) defining each an InGaAs quantum barrier, and injection barriers (22), interposed between two of the layers (20). The layers of the gain region (14) form each an active zone extending from one to the other of the injection barriers (22) adjacent thereto. The strata (26, 28) are dimensioned such that: each of the wells comprises, in the presence of an electric field, at least a first upper subband, a second median subband, and a third lower subband, and the probability of an electron being present in the first subband is highest in the proximity of one of the adjacent injection barriers, in the second subband in the median part of the zone and in the third subband in the proximity of the other adjacent barriers. The laser is formed by a succession of active zones and injection barriers, without interposition of a relaxation zone.
3,910 citations
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TL;DR: The results demonstrate the potential of quantum cascade lasers as continuous wave mid-infrared light sources for high-resolution spectroscopy, chemical sensing applications, and free-space optical communication systems.
Abstract: Continuous wave operation of quantum cascade lasers is reported up to a temperature of 312 kelvin. The devices were fabricated as buried heterostructure lasers with high-reflection coatings on both laser facets, resulting in continuous wave operation with optical output power ranging from 17 milliwatts at 292 kelvin to 3 milliwatts at 312 kelvin, at an emission wavelength of 9.1 micrometers. The results demonstrate the potential of quantum cascade lasers as continuous wave mid-infrared light sources for high-resolution spectroscopy, chemical sensing applications, and free-space optical communication systems.
834 citations
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TL;DR: In this article, a surface-emitting laser with a two-dimensional photonic crystal structure is investigated, where the wavelength of the active layer is designed to match the folded (second-order) Γ point of the Γ−X direction.
Abstract: Lasing action of a surface-emitting laser with a two-dimensional photonic crystal structure is investigated. The photonic crystal has a triangular-lattice structure composed of InP and air holes, which is integrated with an InGaAsP/InP multiple-quantum-well active layer by a wafer fusion technique. Uniform two-dimensional lasing oscillation based on the coupling of light propagating in six equivalent Γ−X directions is successfully observed, where the wavelength of the active layer is designed to match the folded (second-order) Γ point of the Γ−X direction. The very narrow divergence angle of far field pattern and/or the lasing spectrum, which is considered to reflect the two-dimensional stop band, also indicate that the lasing oscillation occurs coherently.
668 citations
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TL;DR: In this paper, a vertical-cavity surface emitting semiconductor laser was proposed to reduce the threshold current of the laser reflector and introduced a circular buried heterostructure, which is 7 mu m long and 6 mu m in diameter.
Abstract: A description is given of the research progress in developing a vertical-cavity surface-emitting (SE) injection laser based on GaAlAs/GaAs and GaInAsP/InP systems Ultimate laser characteristics, device design, state-of-the-art performances, possible device improvement, and future prospects will also be discussed The authors propose a vertical-cavity surface emitting semiconductor laser To reduce the threshold current, they improved the laser reflector and introduced a circular buried heterostructure The microcavity structure, which is 7 mu m long and 6 mu m in diameter, was realized with a threshold of 6 mA Thus, possibilities of an extremely low threshold current SE laser device and a densely packed two-dimensional array are suggested >
624 citations