Design and implementation of microwave integrated ultra low noise amplifier for receiver application
03 Mar 2016-pp 619-624
TL;DR: In this article, the design and implementation of microwave integrated ultra-low-noise amplifier (LNA) is proposed at ISM-band, 2.45 GHz with a gain of 7.87 dB and an NF of 0.893 dB.
Abstract: In this paper, the design and implementation of microwave integrated ultra-low-noise amplifier (LNA) is proposed. The LNA is designed at ISM-band, 2.45 GHz. With a gain of 7.87 dB and an NF of 0.893 dB, the LNA has a power consumption of 62 mW at 3.5-V supply voltage. The LNA has the larger gain with 40 MHz bandwidth. The input and output return losses of the LNA are −10.404 dB and −22.371 dB respectively which are quite small. Compared with the CMOS LNAs, the proposed LNA has better NF, larger gain bandwidth product, and lower power consumption.
Citations
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25 Feb 2018
TL;DR: This work presents a new methodology for designing a cascode low noise amplifier using the scattering parameters together with the gm/ID of the transistors together with a CMOS 65 nm technology to demonstrate the validity of this methodology.
Abstract: This work presents a new methodology for designing a cascode low noise amplifier using the scattering parameters together with the gm/ID of the transistors. A CMOS 65 nm technology was chosen to demonstrate the validity of this methodology. Normally there are two ways to design a LNA, the first of them is to design looking for maximum gain and the other is to look for the minimum noise figure. In this work both approximations were carried out. In addition, this methodology allows us to find the best solution or a trade-off between minimum noise figure and maximum gain for the low noise amplifier without any difficulty.
6 citations
Cites methods from "Design and implementation of microw..."
...In [2-9] different design methods are presented but none of them involves the transistor scattering parameters....
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01 Aug 2017
TL;DR: Comparative study of different applications of LNA has been done and reviews of various applications of low noise amplifier are reviewed.
Abstract: LNA is a vital component in radio frequency communication systems. Various applications of low noise amplifier are reviewed in this paper. The design considerations for low noise amplifier are different for different applications. Comparative study of different applications of LNA has been done and reviewed in this paper.
6 citations
TL;DR: A wideband microwave amplifier design adopting negative image synthesis for impedance matching networks at the input and output section of the amplifier with added strength is the implementation doing away with discrete passive components like chip resistor, capacitor and inductor.
Abstract: In this article, a wideband microwave amplifier design adopting negative image synthesis is presented Various RF and microwave characteristics of the amplifier have been analyzed and simulated The design approach incorporated nonlinear model of the transistor with Negative Image Synthesis for impedance matching networks at the input and output section of the amplifier The added strength to the design is the implementation doing away with discrete passive components like chip resistor, capacitor and inductor The biasing network, matching circuits both input and output sections (IMN, OMN) are all implemented with an optimum number of micro strip transmission lines The designed amplifier renders an excellent transducer gain (GT) of a maximum of 20 dB and a minimum of 10 dB over the designated frequency band of 1---5 GHz with a noise figure (NF) having value lesser than 1 dB The other parameters such as 1 dB compression point, Third Order Intercept point all exhibit a conformal agreement with the design specifications and tolerance The input matching network is designed with a minimum NF thereby trading off a paltry value in gain But the output matching network is optimized to achieve the desired gain, optimizing VSWR To enhance further the performance of the amplifier, output matching network can be enriched with a defective structure on the ground plane
3 citations
TL;DR: This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors that permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.
Abstract: This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.
3 citations
References
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Book•
01 Jun 1984
TL;DR: In this article, the authors derived the Input and Output Stability Circles and the Unilateral Constant-Gain Circles from two-port Matching Networks and Signal Flow Graphs.
Abstract: Preface. 1. Representations of Two-Port Networks. 2. Matching Networks and Signal Flow Graphs. 3. Microwave Transistor Amplifier Design. 4. Noise, Broadband, and High-Power Design Methods. 5. Microwave Transistor Oscillator Design. Appendix: Computer-Aided Designs. Appendix A: A. 1. Circle Equations: Bilinear Transformation, A. 2. Derivation of the Input and Output Stability Circles. Appendix B: Stability Conditions. Appendix C: Unconditional Stability Conditions. Appendix D: Derivation of the Unilateral Constant- Gain Circles. Appendix E: E. 1. Analysis of (3.65) and (3.6.6) for ..., E. 2. Condition for a Simultaneous Conjugate Match. Appendix F: Derivation of Gt, max. Appendix G: Derivation of the Constant Operating Power-Gain Circles. Appendix H: Expressions for ml. Appendix I: Constant VSWR Circles. Appendix J: Mapping of Circles. Appendix K: Noise Concepts. Appendix L: Noise Figure of an Amplifier, Appendix M: Conditions for a Stable Oscilllation. Index.
1,362 citations
01 Dec 2014
TL;DR: In this paper, a single stage cascode pseudomorphic high electron mobility transistor (pHEMT) low noise amplifier (LNA) using a shunt feedback capacitor at 915 MHz for UHF wind profiling radar application is presented.
Abstract: This paper presents a single stage cascode pseudomorphic high electron mobility transistor (pHEMT) low noise amplifier (LNA) using a shunt feedback capacitor at 915 MHz for UHF wind profiling radar application. Capacitive shunt feedback is a solution for simultaneous noise and power match. The source degenerated inductance topology is used with the cascode transistor capacitive shunt feedback to improve stability, input and output return losses, and noise figure. Using cascode transistor capacitive shunt feedback excellent noise figure and gain (S 2 i) are obtained. Low cost and low loss dielectric substrate RT/duroid RO4003C is used in the LNA design. Simulated results of LNA show that overall gain of 25.311 dB and noise figure (NF) of 0.258 dB. Input and output return losses are less than −15 dB. To characterize linearity, third order input intercept point and third order output intercept is simulated as 50.62 ilBm, 69.60 dBm respectively.
4 citations