Journal ArticleDOI
Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks
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TLDR
In this article, a distributed Bragg reflector (DBR)-based resonant-cavity-enhanced (RCE) GeSn photodetector on Si substrates was proposed to achieve high-performance photoderetection in terms of responsivity and 3-dB bandwidth for the short-wave infrared (SWIR) high-speed applications.Abstract:
In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity-enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance photodetection in terms of responsivity and 3-dB bandwidth (BW) for the short-wave infrared (SWIR) high-speed applications. The proposed structure consists of Si/SiO2 distributed Bragg reflectors (DBRs) to enhance the performance of the device. The top and bottom DBRs create a high-quality ( ${Q}$ ) optical cavity to enable multiple pass reflection schemes to increase the responsivity and also high wavelength selectivity with a sharp response. In addition, with an increase in Sn concentration in the active ( i- GeSn) layer, the photodetection range extends to longer wavelengths due to the shrinkage of bandgap energy. The calculated result shows an enhanced 3-dB BW and responsivity as compared to the existing p-i-n PDs. Therefore, the proposed DBR-based RCE GeSn PD can be a promising device for high-speed SWIR photodetection applications.read more
Citations
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Journal ArticleDOI
GeSn-Based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications
TL;DR: In this paper , the authors presented the theory and simulation of heterojunction p-i-n MIR photodetectors (PDs) with Ge0.87Sn0.13/Ge0.92Sn 0.09 layer to elongate the photoabsorption path in the MIR spectrum.
Journal ArticleDOI
Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics
TL;DR: In this article , the authors presented a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs.
Journal ArticleDOI
Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
TL;DR: In this paper , the authors demonstrate a deep survey of the strain-controlling mechanisms in GeSn nanomaterials with different methodologies, using either layer configurations, Sn incorporation, or by external stressors, the emission of different photonic and nanoelectronic applications is controlled.
Journal ArticleDOI
Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures
Chengxuan Gong,Gaige Zheng +1 more
TL;DR: In this article , a photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed.
Journal ArticleDOI
Photoresponse Enhancement in Ge MSM Photodetector With Ge Micropillar Array
TL;DR: In this article , the authors report the unique photodetection properties of germanium (Ge) metal-semiconductor-metal (MSM) photoder with Ge micropillar array.
References
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Proceedings ArticleDOI
Analysis of some important parameters of Si-Ge-Sn RCE-HPT exploiting QCSE and FKE
TL;DR: In this article, the performance of a resonant cavity enhanced Heterobipolar Phototransistor with Ge 0.992 Sn 0.008 /Si 0.3 Ge0.61 Sn0.09 Quantum Well under Quantum Confined Stark Effect has been presented.
Proceedings ArticleDOI
Investigation of Resonant-Cavity-Enhanced GeSn Photodetectors in Short-Wavelength Infrared Regime
Qimiao Chen,Chuan Seng Tan,Wei Li,Kwang Hong Lee,Yi-Chiau Huang,Lin Zhang,Yiding Lin,Bongkwon Son,Wan Khai Loke,Hao Zhou +9 more
TL;DR: GeSn with a 10% Sn content for resonant-cavity-enhanced photodetectors (RCE PDs) was designed for 2000-nm operation, exhibiting a quantum efficiency up to 91% as mentioned in this paper.