Design and optimization of RF MEMS T-type switch for redundancy switch matrix applications
21 Mar 2012-pp 501-508
TL;DR: In this paper, a planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) T-type switch is proposed to perform signal routing in three operational states.
Abstract: This paper presents a novel approach to monolithically implement a planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) T-type switch. T-type switches are used as building blocks for redundancy switch matrix applications in space telecommunication. The T-type switch performs signal routing in three operational states. Two of them are turning states while the other one is a crossover state. The proposed design uses a series metal contact clamped-clamped beam SPST switches, four port cross junctions and a RF crossover. The simulated results for the entire T-type switch demonstrates an insertion loss of −0.46dB, return loss of better than −15.50dB and isolation better than −17.73dB for all states for a wideband frequency range 0–30GHz. The switch gives excellent RF performance near X-band and Ku-band which is the most widely used frequency range for satellite communication.
Citations
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01 Feb 2014-Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems
TL;DR: In this article, a novel torsional RF MEMS capacitive switch design on silicon substrate is presented, which optimized switch topology such as reduction in up-state capacitance results in insertion loss better than 0.1 dB till 20 GHz.
Abstract: A novel torsional RF MEMS capacitive switch design on silicon substrate is presented. The optimized switch topology such as reduction in up-state capacitance results in insertion loss better than ź0.1 dB till 20 GHz. Off to on state capacitance ratio is also improved by 18 fold and isolation is better than ź43 dB at 9.5 GHz. The achieved on state return loss is ź38 dB as compared to ź21 dB at 9.5 GHz. An optimized reduction in contact area and use of floating metal layer increases the switching speed from 56 to 46 μsec. It also increases the switch reliability by alleviating the stiction.
56 citations
01 May 2015-Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems
TL;DR: In this article, a single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch is presented. But the design of the SPDT topology is not discussed.
Abstract: This paper presents a new single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch. The torsional configuration and use of floating metal reduce the stiction probabilities. Use of a single series capacitive switch compared to the conventional approach of a capacitive and series combination, offers compact size, higher bandwidth and superior reliability. The optimized SPDT topology offers a wider bandwidth of 17 GHz (3---20 GHz) with insertion loss of ?0.3 to ?0.4 dB and isolation ?20 to ?44 dB. The proposed structure actuates at 9 V and the contact force varies in the elastic contact regime from 20 to 68 µN for the bias voltage of 10---15 V.
24 citations
01 Jan 2021
TL;DR: In this article, a switch is designed with a square plate of polysilicon with silicon nitride as dielectric, and a DC voltage is applied to the design, which is greater than pull in voltage across the structure of switch.
Abstract: 5G systems provide a large mobile network capacity with higher video resolution, higher data rates as compared to 4G wireless network systems offered. Radio frequency-based Micro-Electro-Mechanical System (RF-MEMS)-based devices can enable various front end functions, non-reciprocity, filtering, radiation and equalization with small size, weight and better performance for IoT and 5G applications.. RF-MEMS based devices have widely grown over the last two decades due to their low power consumption, low loss and superior performances. RF-MEMS switch is mostly used for signal processing functions in microwave and RF circuits. In this paper, a switch is designed with a square plate of polysilicon with silicon nitride as dielectric. A DC voltage is applied to the design, which is greater than pull in voltage across the structure of switch. Penalty-based contact force is applied to the design, which makes the bridge comes in contact with dielectric. The structure showed spatial dependence on total displacement. The capacitance increased by a factor of 55 approximately.
2 citations
References
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Book•
01 Jan 2003
TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
Abstract: From the Publisher:
Practical and theoretical coverage of RF MEMS for circuits and devices
New RF and microwave frequency MEMS (microeletromechanical systems) have potentially enormous and widespread applications in the telecommunications industry. Components based on this technologysuch as switches, varactors, and phase shiftersexhibit virtually no power consumption or loss, making them ideally suited for use in modern telecommunications and wireless devices.
This book sets out the basics of RF MEMS and describes how to design practical devices and circuits. As well as covering fundamentals, Gabriel Rebeiz offers expert tips for designers and presents a range of real-world applications. Throughout, the author utilizes actual engineering examples to illustrate basic principles in theory and practice. Detailed discussion of cutting-edge fabrication and packaging techniques is provided.
Suitable as a tutorial for electrical and computer engineering students, or as an up-to-date reference for practicing circuit designers, RF MEMS provides the most comprehensive available survey of this new and important technology.
Author Biography: Gabriel M. Rebeiz received his PhD from the California Institute of Technology, and is Professor of Electrical and Computer Engineering at the University of Michigan, Ann Arbor. In 1991 he was the recipient of the National Science Foundation Presidential Young Investigator Award, and in 2000 was the corecipient of the IEEE Microwave Prize. A Fellow of the IEEE and a consultant to Rockwell, Samsung, Intel, Standard MEMS, and Agilent, he has published extensively in the field of microwave technology and in the area of RF MEMS.
1,895 citations
TL;DR: In this paper, the authors proposed new solutions for implementing wideband large switch matrices based on crossbar and L-shaped topologies, which indicated less variation of characteristics for certain types of connectivity.
Abstract: This paper proposes new solutions for implementing wideband large switch matrices. These solutions are based on crossbar and L-shaped topologies. This paper introduces a high-performance wideband switch cell to build up scalable NtimesN switch matrices and gives an account of the design, fabrication, and characteristics of the switch cell and a 3times3 crossbar switch matrix. The chosen design procedure is seen to be appropriate since it produces valid measured results. In addition, this paper presents an RF microelectromechanical systems L-shaped switch matrix, which indicates less variation of characteristics for certain types of connectivity. It also demonstrates that for a 4times4 switch matrix, there is a 50% improvement in insertion loss and phase-shift variation.
55 citations
"Design and optimization of RF MEMS ..." refers background in this paper
...longer path results in higher capacitance [9] ....
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TL;DR: In this article, the authors investigated novel configurations of planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) C-type and R-type switches and redundancy switch matrices for satellite communications.
Abstract: The objective of this paper is to investigate novel configurations of planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) C-type and R-type switches and redundancy switch matrices for satellite communications. An in-house monolithic fabrication process dedicated to electrostatic multiport RF MEMS switches and switch matrices is developed and fine tuned. The proposed C-type switch is a four-port device with two operational states. This switch exhibits an insertion loss of less than 0.3 dB and isolation of about 25 dB at satellite C-band frequency range. The novel R-type switch is also a four-port device with an additional operational state. The measured results show an insertion loss of better than 0.4 dB and an isolation of better than 25 dB at C-band. This is the first time that an R-type RF MEMS switch is ever reported. Several of these switches are integrated in the form of redundancy switch matrices, and two novel monolithic five to seven redundancy switch matrices are developed, fabricated, and tested. It is shown that the additional operating state of the R-type switch not only decreases the number of elements by 50% but also reduces the size drastically
45 citations
11 Jun 2006
TL;DR: In this paper, the authors investigate novel configurations of planar multi-port RF MEMS C-type and R-type switches as basic building blocks of redundancy switch matrices for satellite communications.
Abstract: The objective of this paper is to investigate novel configurations of planar multi-port RF MEMS C-type and R-type switches as basic building blocks of redundancy switch matrices for satellite communications. An in house monolithic fabrication process dedicated to electrostatic multi-port RF MEMS switches is developed and fine tuned. The proposed C-type switch is a four port device with two operational states. This switch illustrates an insertion loss of less than 0.3dB and isolation of about 25dB at satellite C band frequency range. The novel R-type switch is also a four port device with an additional operational state that could drastically reduce the number of required switch elements (up to 50%) in a redundancy switch matrix. The measured results show an insertion loss of better than 0.4dB and isolation of better than 25dB at C-band. This is the first time that an R-type RF MEMS switch is ever reported.
34 citations
"Design and optimization of RF MEMS ..." refers background or methods in this paper
...The use of multiport C-type and R-type switches [4], rather than SPNT switches, as the basic building block for redundancy switch matrices considerably simplifies the integration problem of large size redundancy switch matrices [5] ....
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...More recently, few papers have been published on RF MEMS C-type, R-type and T-type switches [4]-[6] ....
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01 Oct 2008
TL;DR: In this article, a novel approach to monolithically implement RF MEMS T-type switches for redundancy switch matrix applications is presented, which achieves an insertion loss of 1.5 dB, a return loss of better than -20 dB and an isolation higher than 28 dB for all states for frequencies up to 30 GHz.
Abstract: This paper presents a novel approach to monolithically implementing RF MEMS T-type switches for redundancy switch matrix applications. The T-type switch performs three operational states: two turning states and one crossover state. A six-mask fabrication process is adapted to fabricate the proposed design. Novel RF circuits were used to implement the entire system, including series contact cantilever beams, RF crossover, 90 degree turns and four-port cross junctions. The measured results for the entire T-type switch demonstrate an insertion loss of 1.5 dB, a return loss of better than -20 dB and an isolation higher than 28 dB for all states for frequencies up to 30 GHz. To our knowledge, this is the first time an RF MEMS T-type switch has ever been reported.
26 citations
"Design and optimization of RF MEMS ..." refers background or methods in this paper
...More recently, few papers have been published on RF MEMS C-type, R-type and T-type switches [4]-[6] ....
[...]
...2 shows an example of redundant ring that consists of T-type switches and amplifiers [6] ....
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...This can be achieved by using two individual SPST switches in each path as has been reported previously [6] ....
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