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Design and pull-in voltage optimization of series metal-to-metal contact RF MEMS switch

TL;DR: In this article, the pull-in voltage of metal-to-metal contact series rf-MEMS switch is optimized for generating a force to obtain a stable contact resistance.
Abstract: This paper presents the design, analysis and simulation of metal-to metal contact series rf-MEMS switch for its pull-in voltage optimization Fixed — fixed flexure is used as a switching element and the Pull-in voltage is optimized for generating a force to obtain a stable contact resistance Au is used as the contact material The simulated value of the pull-in voltage (V pi ) is approximately 1020 V At the pull-in voltage the area occupied under contact is 889 µm2 and the value of contact force is 184 µN The switch pull-in voltage value is optimized at a value of 23 V giving contact area of 924 µm2 and contact force of 3155 µN
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01 Jan 2009
TL;DR: In this article, the authors presented the parametric optimization of a symmetric Toggle RF MEMS Switch (STS) for reduction of overall dimensions and improvement in isolation and insertion loss.
Abstract: This paper presents the parametric optimization of Symmetric Toggle RF MEMS Switch (STS), particularly for reduction of overall dimensions and improvement in isolation and insertion loss. The variations in device topology, especially the connecting lever length demonstrates a significant change in resonance frequency and overall device dimensions. The impact of multilayer metal structures used to realize the bridge portion of the switch is also studied by changing the number and composition of metal layers. A single layer structure shows better insertion loss characteristics compared to more complex multilayer stack with added advantage of reduction in fabrication complexity. The relative change in residual stress for single and multilayer structure is also discussed. Additional compactness in size (46%) is achieved by changing the switch dielectric from SiO2 to HfO2 with dielectric constant 20.

7 citations


"Design and pull-in voltage optimiza..." refers background in this paper

  • ...Bridge structure is realized by a seed layer of Cr/Au followed by gold electroplating [8]....

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