Design, fabrication, characterization and packaging of bottom gate and nano-porous TiO 2 based FET

TLDR: In this paper, a bottom gate field effect transistors (FET) with nano-porous TiO 2 as channel has been designed, fabricated, characterized and packaged and the fabrication process is simple, scalable and reproducible.

Abstract: Bottom gate field effect transistors (FETs) with nano-porous TiO 2 as channel has been designed, fabricated, characterized and packaged. The fabrication process is simple, scalable and reproducible. Reactive RF sputtering and lift off process was used for depositing and patterning TiO 2 respectively. TiO 2 was annealed to tune its crystallinity from amorphous to anatase. Microscopy study of TiO 2 film reveals nano-porous morphology which improves the surface properties and makes it useful for sensing applications. The transistor characteristics of FET show p-channel behavior and the device has been packaged onto headers for testing it in presence of analytes.