Journal ArticleDOI
Design, Modeling and Fabrication of TPoS MEMS Resonators With Improved Performance at 1 GHz
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In this paper, the effects of physical dimensions such as length, width and thickness as well as the mode of vibration and the number of anchors on the performance of longitudinal thin film piezoelectric on silicon (TPoS) MEMS resonators have been studied.Abstract:
In this work, the effects of physical dimensions such as length, width and thickness as well as the mode of vibration and the number of anchors on the performance of longitudinal thin film piezoelectric on silicon (TPoS) MEMS resonators have been studied. TPoS resonators, designed for a resonant frequency of around 1 GHz, were fabricated with a 4 mask CMOS compatible process. A $225~\mu \text{m}$ wide resonator excited in its $23^{rd}$ order had an unloaded quality factor of 9453 (in vacuum), which is the highest value reported so far for similar resonators, motional resistance of $107~\Omega $ and linear thermal coefficient of frequency of -28.4 ppm. We have also studied and modeled the different loss mechanisms in these devices. The model matches well with measured results for resonators of different geometries, modes of vibrations and number of anchors. [2020-0397]read more
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Journal ArticleDOI
Effect of Phononic Crystal Orientation on AlN-on-Silicon Lamb Wave Micromechanical Resonators
TL;DR: In this article , the effect of orientation on the acoustic band gap (ABG) of two PnC designs and their effect on boosting quality factor (Q) of AlN-on-Silicon Lamb Wave Resonators (LWRs) was explored.
Effect of Phononic Crystal Orientation on AlN-on-Silicon Lamb Wave Micromechanical Resonators
TL;DR: In this article , the effect of orientation on the acoustic band gap (ABG) of two PnC designs and their effect on boosting quality factor (Q) was explored, and it was shown that adding a hole into the disk to form a ring changes its ABG to be much more sensitive to orientation.
Proceedings ArticleDOI
Effect of Undercut due to Isotropic Etch while Releasing on the Performance of TPoS Resonators
TL;DR: In this paper , the effect of additional loss due to the isotropic etch used to release the extensional mode thin piezoelectric on silicon (TPoS) resonators is reported and validated.
Proceedings ArticleDOI
Effect of Undercut due to Isotropic Etch while Releasing on the Performance of TPoS Resonators
TL;DR: In this paper , the effect of additional loss due to the isotropic etch used to release the extensional mode thin piezoelectric on silicon (TPoS) resonators is reported and validated.
References
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Proceedings ArticleDOI
1D and 2D wide acoustic bandgap Phononic Crystal structures for performance improvement of AlN-on-Si resonators operating in GHz range
TL;DR: In this article, a new PnC unit cell topology is designed, which has a very wide ABG of 138 MHz with center frequency around 1 GHz and minimum feature size of 0.6 μm.
Proceedings ArticleDOI
Design and fabrication of 1 GHz lateral TPoS MEMS resonator for RF front end applications
TL;DR: In this paper, a laterally excited thin film piezoelectric on Silicon (TPoS) MEMS resonators of resonance frequency around 1 GHz were fabricated on 5 μm SOI and 0.5 μm Aluminium Nitride (ALN) film.
Journal ArticleDOI
A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air.
TL;DR: In this article, the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air were reported.
Proceedings ArticleDOI
Extraction of D 31 Piezoelectric Coefficient of AlN Thin Film
TL;DR: In this paper, the authors proposed a method to extract the piezoelectric coupling coefficient d31 from the transmission characteristics of a resonator, which is responsible for the excitation in longitudinal mode resonators.