Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors
03 Mar 2014-pp 738-742
TL;DR: The proposed capacitance readout interface circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors.
Abstract: We present a capacitance readout interface circuit in bulk CMOS process which is functional at wide temperature range between -55oC to 175oC. The proposed circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors. The circuit is implemented using IBM 0.13μm CMOS technology. Simulation results show that the circuit has excellent stability over wide temperature range, as high as 0.1% accuracy between -55oC to 175oC.
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01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their chosen books like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they juggled with some harmful virus inside their computer. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library spans in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Kindly say, the design of analog cmos integrated circuits is universally compatible with any devices to read.
1,038 citations
01 Jul 1971
TL;DR: In this paper, the fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown to be feasible and a simplified building block amplifier was constructed and tested.
Abstract: : The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)
101 citations
TL;DR: The temperature sensor proposed in this paper can be used in radiosondes for its low operating temperature, small size, and low heat capacity.
Abstract: This paper presents a micromachined monocrystalline silicon piezoresistive temperature sensor fabricated by a surface micromachining CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-Electro-Mechanical System) process. The design of the temperature sensor is based on the structure of the multi-layer cantilever beam and the bimetallic effect. The temperature change of the cantilever beam is translated into the change of the piezoresistance’s value. The test results show that the sensitivities of the sensors are 27.9 mV/°C with 100 Ω/▯ piezoresistance between −40 °C to 60 °C and 7.4 mV/°C with 400 Ω/▯ piezoresistance between −90 °C to 60 °C. The temperature sensor proposed in this paper can be used in radiosondes for its low operating temperature (as low as −90 °C), small size (below 1 mm2) and low heat capacity.
15 citations
TL;DR: In this article, a complementary metal-oxide-semiconductor (CMOS) capacitance to digital converter (CDC) for capacitive Microelectromechanical Systems (MEMS) pressure sensors, that is functionally tested over a wide temperature range from −20°C to 225°C.
Abstract: We present a complementary metal-oxide-semiconductor (CMOS) capacitance to digital converter (CDC) for capacitive Microelectromechanical Systems (MEMS) pressure sensors, that is functionally tested over a wide temperature range from −20 °C to 225 °C. The proposed circuit uses a sigma–delta technique to convert the input ratio between sensor and reference capacitors into a digital output. A constant-g m biasing technique is used to alleviate performance degradation at high temperatures. The circuit is implemented using the IBM 0.13 μm CMOS process technology which incorporates a 2.5 V power supply. The simulation results show that the circuit offers 0.03% accuracy between −55 °C and 225 °C. The circuit is tested with a commercial MEMS capacitive pressure sensor. Experimental results show that the circuit offers good temperature stability, resolution of 1.44fF, and accuracy of 2.4% between −20 °C and 225 °C.
4 citations
28 May 2017
TL;DR: A novel resistive sensor interface for high temperature applications is presented, based on a time domain architecture using Injection Locked Oscillators as phase shifters that results in higher temperature hardness and simpler circuits.
Abstract: A novel resistive sensor interface for high temperature applications is presented. It is based on a time domain architecture using Injection Locked Oscillators as phase shifters that results in higher temperature hardness and simpler circuits. The system depends on the relative accuracy instead of its absolute properties and doesn't suffer from temperature variations. The proposed circuit is designed using 0.18 μm partially depleted silicon on insulator technology. Simulations have shown a maximum variation of the output lower than ±0.5%, over a temperature ranging from −40°C to 250°C.
3 citations
References
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01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their chosen books like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than enjoying a good book with a cup of coffee in the afternoon, instead they juggled with some harmful virus inside their computer. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library spans in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Kindly say, the design of analog cmos integrated circuits is universally compatible with any devices to read.
1,038 citations
"Design of a CMOS readout circuit fo..." refers background in this paper
...Compared to the telescopic structure, the folded-cascode amplifier has lower voltage headroom requirement and it also provides better performance stability [18]....
[...]
...In Figure 3, neglecting channel length modulation and body effect, the current, Ib flowing through the biasing resistor, Rb can be expressed as [18],...
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TL;DR: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates as mentioned in this paper.
Abstract: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates. These semiconductors have been recognized for several decades as being suitable for these applications, but until recently the low material quality has not allowed the fabrication of high quality devices. Silicon carbide and diamond based electronics are at different stages of their development. An overview of the status of silicon carbide's and diamond's application for high temperature electronics is presented.
268 citations
01 Jan 1994
TL;DR: In this paper, the authors summarized physical effects and materials issues important for reliable operation of semiconductor device technologies at high temperatures (> 125° C. They concluded that Si on insulator (SOI) technology can be developed readily for small signal operation up to about 300° C, while GaAs offers little advantage over Si because of poor device isolation and the lack of reliable contacts above 250°C.
Abstract: High-temperature electronics applications are found in combustion systems, well logging, industrial processes, air stagnation points in supersonic aircraft, vehicle brakes, nuclear reactors, and dense electronic packages. We summarize physical effects and materials issues important for reliable operation of semiconductor device technologies at high temperatures (> 125° C). We review the high-temperature potential of Si, GaAs, other III-V compounds, and SiC. For completeness, we also comment on nitrides, diamond, and vacuum microelectronics. We conclude that Si on insulator (SOI) technology can be developed readily for small signal operation up to about 300° C. There is some ongoing work in this area. GaAs offers little advantage over Si because of poor device isolation and the lack of reliable contacts above 250° C
159 citations
TL;DR: In this article, the authors summarize physical effects and materials issues important for reliable operation of semiconductor device technologies at high temperatures (>125/spl deg/C) and review the high-temperature potential of Si, GaAs, other III-V compounds, and SiC.
Abstract: High-temperature electronics applications are found in combustion systems, well logging, and industrial processes, air stagnation points in supersonic aircraft, vehicle brakes, nuclear reactors, and dense electronic packages. We summarize physical effects and materials issues important for reliable operation of semiconductor device technologies at high temperatures (>125/spl deg/C). We review the high-temperature potential of Si, GaAs, other III-V compounds, and SiC. For completeness, we also comment on nitrides, diamond, and vacuum microelectronics. We conclude that Si on insulator (SOI) technology can be developed readily for small signal operation up to about 300/spl deg/C. There is some ongoing work in this area. GaAs offers little advantage over Si because of poor device isolation and the lack of reliable contacts above 250/spl deg/C. Other III-V compounds could be developed for operation to /spl sim/600/spl deg/C, using processes similar to those used for optoelectronics. There may be a market niche for III-V power devices above 200/spl deg/C. There is considerable activity in semiconducting SiC, and device functionality has been demonstrated above 600/spl deg/C. SiC is promising for operation above 300/spl deg/C, and for power devices at frequencies from dc to /spl sim/10 GHz, but it faces numerous challenges to achieve manufacturable status. We attempt to match technologies with application areas. >
111 citations
"Design of a CMOS readout circuit fo..." refers background in this paper
...Capacitive MEMS sensors such as accelerometers, pressure sensors, flow sensors are widely used in the above applications where wide temperature operation beyond the standard military temperature range (-55oC to 125oC) is highly desirable reaching to the extended range [1-5]....
[...]
01 Jul 1971
TL;DR: In this paper, the fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown to be feasible and a simplified building block amplifier was constructed and tested.
Abstract: : The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)
101 citations
"Design of a CMOS readout circuit fo..." refers background in this paper
...However, electronics made with conventional bulk CMOS technology suffer from many drawbacks at high temperatures, including threshold voltages drop, electron/holes mobility reduction and increase of junction leakage currents [6, 7]....
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