Proceedings ArticleDOI
Design optimization of RF MEMS SP4T and SP6T switch
Sangita Chaki Roy,Kamal J. Rangra +1 more
- Vol. 2, pp 443-446
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TLDR
In this article, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented.Abstract:
In this paper, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented. The device takes advantage of the CPW transmission line with small width and spacing configured for 50Ω line impedance in ohmiccontact SPST switch. The results show significant improvement in insertion loss and isolation without any significant changes in other electromechanical and RF parameters. A systematic comparison of different configurations of CPW designs and SPST switch is performed. The simulated insertion loss and isolation are better than −0.238 dB and −53.002 dB obtained for SP4T and −0.2956 dB and −57.217 dB for SP6T switch at 8 GHz respectively.read more
Citations
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Journal ArticleDOI
Design of compact and wide bandwidth SPDT with anti-stiction torsional RF MEMS series capacitive switch
TL;DR: In this article, a single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch is presented. But the design of the SPDT topology is not discussed.
An overview of isolation improvement techniques in rf switch
TL;DR: In this article, five techniques to improve isolation of RF switch are reviewed which are material with fabrication process design, circuit design, resonant circuit, transmission line and resonator, and most of these isolation improvement techniques are applied in RF switch designs such as single pole single throw (SPST) and single pole multi-throw (SPMT).
Proceedings ArticleDOI
Design of a RF NEMS switch matrix
TL;DR: A prototype 3×3 monolithic switch matrix is designed and simulated at the nano-scale level using Ansoft HFSS and Agilent ADS and results show that the proposed NEMS switch matrices are capable of working up to 60GHz with good RF performance.
References
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Book
RF MEMS: Theory, Design, and Technology
TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
Journal ArticleDOI
MEMS for wireless communications: 'from RF-MEMS components to RF-MEMS-SiP'
TL;DR: In this article, the progress in RF-MEMS from a device and integration perspective is reviewed, and the worldwide state-of-the-art of RFMEMS devices including switches, variable capacitors, resonators and filters are described.
Journal ArticleDOI
Low-loss 2- and 4-bit TTD MEMS phase shifters based on SP4T switches
TL;DR: In this paper, 2-and 4-bit X-to-K/sub u/-band phase shifters with a very low insertion loss are described, which is achieved using MEMS SP4T switches, which reduce the number of switches in the signal path by half compared to conventional designs with SP2T switches.
Journal ArticleDOI
A low-loss single-pole six-throw switch based on compact RF MEMS switches
TL;DR: In this paper, a low-loss single-pole six-throw (SP6T) switch using very compact metal-contact RF microelectromechanical system (MEMS) series switches is presented.
Journal ArticleDOI
Single-pole-four-throw switch using high-aspect-ratio lateral switches
TL;DR: In this article, a singlepole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported, which is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer.