Design optimization of RF MEMS SP4T and SP6T switch
17 Nov 2009-Vol. 2, pp 443-446
TL;DR: In this article, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented.
Abstract: In this paper, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented. The device takes advantage of the CPW transmission line with small width and spacing configured for 50Ω line impedance in ohmiccontact SPST switch. The results show significant improvement in insertion loss and isolation without any significant changes in other electromechanical and RF parameters. A systematic comparison of different configurations of CPW designs and SPST switch is performed. The simulated insertion loss and isolation are better than −0.238 dB and −53.002 dB obtained for SP4T and −0.2956 dB and −57.217 dB for SP6T switch at 8 GHz respectively.
01 May 2015-Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems
TL;DR: In this article, a single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch is presented. But the design of the SPDT topology is not discussed.
Abstract: This paper presents a new single pole double throw (SPDT) RF MEMS switch design based on a torsional series capacitive switch. The torsional configuration and use of floating metal reduce the stiction probabilities. Use of a single series capacitive switch compared to the conventional approach of a capacitive and series combination, offers compact size, higher bandwidth and superior reliability. The optimized SPDT topology offers a wider bandwidth of 17 GHz (3---20 GHz) with insertion loss of ?0.3 to ?0.4 dB and isolation ?20 to ?44 dB. The proposed structure actuates at 9 V and the contact force varies in the elastic contact regime from 20 to 68 µN for the bias voltage of 10---15 V.
01 Jan 2014
TL;DR: In this article, five techniques to improve isolation of RF switch are reviewed which are material with fabrication process design, circuit design, resonant circuit, transmission line and resonator, and most of these isolation improvement techniques are applied in RF switch designs such as single pole single throw (SPST) and single pole multi-throw (SPMT).
Abstract: In this paper, five techniques to improve isolation of RF switch are reviewed which are material with fabrication process design, circuit design, resonant circuit, transmission line and resonator. Most of these isolation improvement techniques are applied in RF switch designs such as single pole single throw (SPST) and single pole multi throw (SPMT). Several solid-state devices are used for switching element such as PIN diode, MEMS, FET, HBT and HEMT. They are commonly used in satelite communication, radar system, instrumentation and base station applications.
03 Jul 2011
TL;DR: A prototype 3×3 monolithic switch matrix is designed and simulated at the nano-scale level using Ansoft HFSS and Agilent ADS and results show that the proposed NEMS switch matrices are capable of working up to 60GHz with good RF performance.
Abstract: This paper presents for the first time, the development of a monolithic RF NEMS switch matrix. A prototype 3×3 monolithic switch matrix is designed and simulated at the nano-scale level using Ansoft HFSS and Agilent ADS. Simulation results show that the proposed NEMS switch matrices are capable of working up to 60GHz with good RF performance such as return loss of at least 20dB, isolation of at least 78dB and insertion loss of at most 0.58dB. The proposed design (27×45µm2) is at least 10, 000 times more compact than the previously reported RF switch matrices. Besides, the 3×3 NEMS switch matrix can be easily expanded to larger matrices using Clos network.
01 Jan 2003
TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
Abstract: From the Publisher: Practical and theoretical coverage of RF MEMS for circuits and devices New RF and microwave frequency MEMS (microeletromechanical systems) have potentially enormous and widespread applications in the telecommunications industry. Components based on this technologysuch as switches, varactors, and phase shiftersexhibit virtually no power consumption or loss, making them ideally suited for use in modern telecommunications and wireless devices. This book sets out the basics of RF MEMS and describes how to design practical devices and circuits. As well as covering fundamentals, Gabriel Rebeiz offers expert tips for designers and presents a range of real-world applications. Throughout, the author utilizes actual engineering examples to illustrate basic principles in theory and practice. Detailed discussion of cutting-edge fabrication and packaging techniques is provided. Suitable as a tutorial for electrical and computer engineering students, or as an up-to-date reference for practicing circuit designers, RF MEMS provides the most comprehensive available survey of this new and important technology. Author Biography: Gabriel M. Rebeiz received his PhD from the California Institute of Technology, and is Professor of Electrical and Computer Engineering at the University of Michigan, Ann Arbor. In 1991 he was the recipient of the National Science Foundation Presidential Young Investigator Award, and in 2000 was the corecipient of the IEEE Microwave Prize. A Fellow of the IEEE and a consultant to Rockwell, Samsung, Intel, Standard MEMS, and Agilent, he has published extensively in the field of microwave technology and in the area of RF MEMS.
TL;DR: In this article, the progress in RF-MEMS from a device and integration perspective is reviewed, and the worldwide state-of-the-art of RFMEMS devices including switches, variable capacitors, resonators and filters are described.
Abstract: Wireless communication has led to an explosive growth of emerging consumer and military applications of radio frequency (RF), microwave and millimeter wave circuits and systems. Future personal (hand-held) and ground communications systems as well as communications satellites necessitate the use of highly integrated RF front-ends, featuring small size, low weight, high performance and low cost. Continuing chip scaling has contributed to the extent that off-chip, bulky passive RF components, such as high-Q inductors, ceramic and SAW filters, varactor diodes and discrete PIN diode switches, have become limiting. Micro-machining or MEMS technology is now rapidly emerging as an enabling technology to yield a new generation of high-performance RF-MEMS passives to replace these off-chip passives in wireless communication (sub)systems. This paper reviews the progress in RF-MEMS from a device and integration perspective. The worldwide state-of-the-art of RF-MEMS devices including switches, variable capacitors, resonators and filters are described. Next, it is stipulated how integration of RF-MEMS passives with other passives (as inductors, LC filters, SAW devices, couplers and power dividers) and, active circuitry (ASICs, RFICs) can lead to the so-called RF-MEMS system-in-a-package (RF-MEMS-SiP) modules. The evolution of the RF-MEMS-SiP technology is illustrated using IMEC's microwave multi-layer thin-film MCM-D technology which today already serves as a technology platform for RF-SiP.
"Design optimization of RF MEMS SP4T..." refers background in this paper
TL;DR: In this paper, 2-and 4-bit X-to-K/sub u/-band phase shifters with a very low insertion loss are described, which is achieved using MEMS SP4T switches, which reduce the number of switches in the signal path by half compared to conventional designs with SP2T switches.
Abstract: 2- and 4-bit microelectromechanical system (MEMS) X- to K/sub u/-band true-time-delay phase shifters with a very low insertion loss are described. The phase shifters are fabricated on 200-/spl mu/m GaAs substrates and the low loss is achieved using MEMS SP4T switches, which reduce the number of switches in the signal path by half when compared to conventional designs with SP2T switches. Measurements indicate an insertion loss of -0.6/spl plusmn/0.3 and -1.2/spl plusmn/0.5 dB at 10 GHz for the 2- and 4-bit designs, respectively. The measured losses agreed very well with Momentum simulations and are the lowest reported to date. The 2-bit phase shifter performed well from dc-18 GHz, with -0.8/spl plusmn/0.3-dB insertion loss at 18 GHz and a return loss of <-10.5 dB over dc-18 GHz.
"Design optimization of RF MEMS SP4T..." refers methods in this paper
07 Nov 2005
TL;DR: In this paper, a low-loss single-pole six-throw (SP6T) switch using very compact metal-contact RF microelectromechanical system (MEMS) series switches is presented.
Abstract: A low-loss single-pole six-throw (SP6T) switch using very compact metal-contact RF microelectromechanical system (MEMS) series switches is presented. The metal-contact MEMS switch has an extremely compact active area of 0.4 mm /spl times/ 0.3 mm, thus permitting the formation of an SP6T MEMS switch into the RF switch with a total area of 1 mm/sup 2/. The MEMS switch shows an effective spring constant of 746 N/m and an actuation time of 8.0 /spl mu/s. It has an isolation loss from -64.4 to -30.6dB and an insertion loss of 0.08-0.19 dB at 0.5-20 GHz. Furthermore, in order to evaluate RF performances of the SP6T MEMS switch, as well as those of the single-pole single-throw RF MEMS series switch, we have performed small-signal modeling based on a parameter-extraction method. Accurate agreement between the measured and modeled RF performances demonstrates the validity of the small-signal model. The SP6T switch performed well with an isolation loss from -62.4 to -39.1dB and an insertion loss of 0.19-0.70 dB from dc to 6 GHz between the input port and each output port.
TL;DR: In this article, a singlepole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported, which is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer.
Abstract: A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.