Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxy
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...Use of REs with TOSs is receiving much interest in scientific community due to the wide range of technological applications based on their increased transparency in the visible region (Sc or Y doped ZnO) [9], intra-ionic radiative transition processes (Er doped In2O3) [10], increased photosensitivity or photo-emissivity (Er doped SnO2 and Erbium Tin Oxide) [11], bandgap engineering (Ga doped Lu3Al5O12) [12], enhanced photocatalytic activity (Er doped β-Bi2O3) [13], defect engineering (Praseodymium doped GaN) [14], reduction of the oxygen and N related defects by Er [15] etc....
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...For example, low-temperature photo-capacitance and photocurrent measurements were performed to study defects introduced in GaAs by N incorporation [15]....
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