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Determining ionizing radiation using sensors based on organic semiconducting material

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TLDR
In this article, the use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose.
Abstract
The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.

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Carbon based materials for electronic bio-sensing

TL;DR: In this paper, the authors provide a birds-eye view of the most promising classes of active layers as well as different device architectures and methods of fabrication, and strategies for interfacing bio components with organic or carbon nano-structured electronic active layers.
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Ammonia gas sensor based on pentacene organic field-effect transistor

TL;DR: In this paper, bottom contact organic field effect transistors (OFETs) were created using pentacene as an active layer and polymerthylmethacrylate (PMMA) as an insulator.
Journal ArticleDOI

Radiation Detection: Resistivity Responses in Functional Poly(Olefin Sulfone)/Carbon Nanotube Composites

TL;DR: In this paper, the authors use a polymer/multiwalled carbon nanotube (MWCNT) blend for the detection of gamma rays, which is capable of producing a real-time signal at room temperature, composed of relatively inexpensive starting materials, with nearly zero cost of operation and a small size.
Journal ArticleDOI

Origin of Radiation-Induced Degradation in Polymer Solar Cells

TL;DR: In this paper, in situ polymer photovoltaic performance and recombination lifetimes are measured and it is found that charge accumulation is the primary reason for degradation of solar cells This is affected by the mixing ratio of donor and acceptor in the bulk heterojunction Both a quantitative understanding and the physical model of the degradation mechanism are presented.
Journal ArticleDOI

A Highly Sensitive, Direct X‐Ray Detector Based on a Low‐Voltage Organic Field‐Effect Transistor

TL;DR: In this article, a novel organic transistor-based sensor for direct X-ray detection is proposed, which operates at low voltages and is entirely fabricated on flexible, plastic substrates with techniques that can be easily upscaled to an industrial scale.
References
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Journal ArticleDOI

Organic Thin Film Transistors for Large Area Electronics

TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Visible light emission from semiconducting polymer diodes

TL;DR: In this article, the authors reported visible light emission from Shottky diodes made from semiconducting polymers, confirming the discovery by the Cambridge group [Nature 347, 539 (1990)].
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A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

TL;DR: In this paper, a low-bandgap conjugated polymer (PTPTB) is introduced for thin-film optoelectronic devices working in the near infrared (NIR).
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High-Performance OTFTs Using Surface-Modified Alumina Dielectrics

Abstract: We show novel and selective means to modify the dielectric surfaces in organic TFTs. Modification schemes include alkylphosphonic acid monolayers that have a strong affinity for alumina surfaces. Monolayers form robust, extremely uniform thin films and are deposited through simple spin-coating with a dilute solution of the monolayer precursor in solvent. Adding monolayers to organic TFTs has resulted in polycrystalline devices with mobilities nearly equal to single-crystal values while maintaining acceptable values of other device parameters (for example, the threshold voltage, on/off ratio, and subthreshold slope) required for fully functional integrated circuits.
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Two‐stage process for buildup of radiation‐induced interface states

TL;DR: In this article, the interface state buildup in wetoxide MOS capacitors under positive bias was studied as a function of time following pulsed e −beam irradiation, and the buildup was found to be a two-stage process.
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