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Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters (Postprint)
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TLDR
In this article, a physics-based finite element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters is presented.Abstract:
: We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.read more
Citations
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Journal ArticleDOI
Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features
TL;DR: In this paper, micro-Raman spectroscopy was used to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs.
Journal ArticleDOI
The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
TL;DR: In this paper, the thermal response of AlGaN/GaN high electron mobility transistors was examined via micro-Raman spectroscopy under various bias conditions where power dissipation levels were identical.
Journal ArticleDOI
Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs
TL;DR: It is shown that operating bias condition has a significant role in device reliability by altering value and location of the peak temperature, which then alters the type and rate of thermally induced degradation taking place at critical locations such as the drain side corner of the gate.
Journal ArticleDOI
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
TL;DR: In this paper, coupled electro-thermo-mechanical simulation and Raman thermometry were used to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs).
Journal ArticleDOI
Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.
TL;DR: In this paper, the authors demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN.
References
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Journal ArticleDOI
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
Oliver Ambacher,Jacek A. Majewski,C. R. Miskys,A. Link,M. Hermann,Martin Eickhoff,Martin Stutzmann,Fabio Bernardini,Vincenzo Fiorentini,V. Tilak,B Schaff,L.F. Eastman +11 more
TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter
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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
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Electron transport characteristics of GaN for high temperature device modeling
TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
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Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects.
TL;DR: AlGaN/GaN high electron mobility transistor (HEMT) device operation was modeled from the sub-micrometer scale to the substrate using a combination of an electro-thermal device model for the active device with realistic power dissipation within the device and a coupled three dimensional thermal model to account for the substrate.
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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
Fabio Alessio Marino,N. Faralli,Tomas Palacios,David K. Ferry,Stephen M. Goodnick,Marco Saraniti +5 more
TL;DR: In this article, the effects of threading edge dislocations on the DC and RF performance of GaN high-electron mobility transistor (HEMT) devices were investigated with a full-band cellular Monte Carlo (CMC) simulator, including the full details of the band structure and the phonon spectra.