Proceedings ArticleDOI
Development of composite vertical wet etching for silicon material
Mao Jung Huang,Chun-Ming Chang,Nien Nan Chu,Yu Hsiang Tang,Chii Rong Yang +4 more
- pp 564-567
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TLDR
The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etch process.Abstract:
In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25V is applied and the catalytic material is 10nm in thickness, a 30μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.read more
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Bulk micromachining of silicon
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TL;DR: In this paper, the mesopore morphology and its dependence on formation parameters, such as HF concentration, current density, bias, and substrate doping density, is investigated in detail.
Journal ArticleDOI
Effect of Catalyst Shape and Etchant Composition on Etching Direction in Metal-Assisted Chemical Etching of Silicon to Fabricate 3D Nanostructures
TL;DR: Metal-assisted chemical etching of silicon in conjunction with shaped catalysts was used to fabricate 3D nanostructures such as sloping channels, cycloids, and spirals along with traditional vertical channels to demonstrate the potential of MaCE as a new, maskless nanofabrication technology.
Journal ArticleDOI
Precise mask alignment to the crystallographic orientation of silicon wafers using wet anisotropic etching
Mattias Vangbo,Ylva Bäcklund +1 more
TL;DR: In this article, a design tool for fast and precise determination of the crystallographic orientation in (001) and (011) silicon wafers using anisotropic wet etching is introduced, taking advantage of the symmetric under-etching behaviour around, but not at (!), the -directions.