Development of Radiation Hard ${\rm N}^{+}$ -on-P Silicon Microstrip Sensors for Super LHC
TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
Abstract: Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations lang100rang and lang111rang with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
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KEK1, University of Liverpool2, University of Glasgow3, Santa Cruz Institute for Particle Physics4, Academy of Sciences of the Czech Republic5, University of Cambridge6, Brookhaven National Laboratory7, Lancaster University8, Jožef Stefan Institute9, University of Geneva10, Stony Brook University11, Charles University in Prague12, University of Sheffield13, Spanish National Research Council14, University of New Mexico15, University of Tsukuba16, University of Freiburg17, Hamamatsu Photonics18
21 Apr 2011-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the authors developed a highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider.
Abstract: We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1×1015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm×9.75 cm large-area sensor and several 1 cm×1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000 V.
79 citations
University of Tsukuba1, University of Liverpool2, University of Glasgow3, University of California, Santa Cruz4, Academy of Sciences of the Czech Republic5, University of Cambridge6, Brookhaven National Laboratory7, Lancaster University8, University of Ljubljana9, University of Geneva10, Stony Brook University11, Charles University in Prague12, University of Sheffield13, Spanish National Research Council14, University of New Mexico15, KEK16, University of Freiburg17
21 Apr 2011-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the authors developed n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility.
Abstract: We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
38 citations
University of California, Santa Cruz1, University of Liverpool2, University of Glasgow3, Academy of Sciences of the Czech Republic4, University of Cambridge5, Brookhaven National Laboratory6, Lancaster University7, University of Ljubljana8, University of Geneva9, Stony Brook University10, Charles University in Prague11, University of Sheffield12, Spanish National Research Council13, University of New Mexico14, University of Tsukuba15, KEK16, University of Freiburg17
21 Apr 2011-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the authors developed n+inp, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment.
Abstract: We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ∼1 kΩ, after the integrated luminosity of 6 ab−1, which is twice the luminosity goal.
31 citations
TL;DR: In this article, electrical signals induced by pulses of a focused IR (λ = 1064 nm) laser beam in strip detectors were measured using a wide bandwidth current amplifier, where the laser beam was focused to a spot with a diameter of about 8 μm and directed to the detector surface.
Abstract: Electrical signals induced by pulses of a focused IR (λ = 1064 nm) laser beam in strip detectors were measured using a wide bandwidth current amplifier. The laser beam was focused to a spot with a diameter of about 8 μm and directed to the detector surface. The detector was mounted on a high precision moving stage allowing measurements of signals induced by a laser beam directed to different locations on the detector surface. Measurements were performed with miniature micro-strip detectors made by implanting n+ type readout strips on p-type silicon bulk (n+-p). Special type of detectors, with implants not fully covered by metal, allowed TCT measurements with a laser beam directed on the implant. The detectors were irradiated with reactor neutrons up to fluences of 51015 neq/cm2. The signals were measured at reverse bias voltages up to 1000 V. The measurements were repeated after several annealing steps at 60°C. Strong dependence of charge collection on distance of laser beam from the implant was observed in heavily irradiated detectors indicating that charge multiplication is increased at implant edges.
16 citations
TL;DR: In this article, the authors presented charge collection measurements with silicon detectors with implanted n-type readout strips in p-type silicon bulk (n+p) and observed that irradiation of these detectors with pions results in only ~ 30% of the increase of VFD seen after irradiation with neutrons to the same NIEL equivalent fluence.
Abstract: Charge collection measurements with silicon detectors with implanted n-type readout strips in p-type silicon bulk (n+-p) are presented. Detectors were irradiated with 191 MeV pions at the Paul Scherrer Institute (PSI) in Villigen in Switzerland. Signals induced by electrons from 90Sr source were measured with SCT128 chip. Collected charge and detector current were measured after several annealing steps summing up to over 10000 minutes at 60?C. It was observed that irradiation of these detectors with pions results in only ~ 30% of the increase of Vfd seen after irradiation with neutrons to the same NIEL equivalent fluence. Charge multiplication effects in pion irradiated detectors were seen only after long accelerated annealing time. Both effects are consistent with smaller space-charge introduction rates after irradiation with charged hadrons, characteristic for oxygenated detector material. It was confirmed that, at sufficient bias voltage, reverse annealing after pion irradiation does not represent a problem for application of these detectors in trackers at upgraded LHC.
8 citations
References
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15 Dec 1988-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, a series of prototype silicon detectors with double side readout are presented, which can be operated in capacitive charge division with good spatial resolution on two orthogonal coordinates.
Abstract: Results of tests performed on a series of prototype silicon detectors with double side readout are presented. Electrical characteristics and particle data analysis indicate that these detectors can be operated in capacitive charge division with good spatial resolution on two orthogonal coordinates.
21 citations
"Development of Radiation Hard ${\rm..." refers methods in this paper
...Technologies such as p-stop and p-spray [8], [9] have been successfully adopted for double-sided -n- strip sensors and -on-n sensors....
[...]
01 Sep 2007-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the leakage current, onset of microdischarge, body capacitance, charge collection efficiency, and n-strip isolation at the fluences of nil, 0.7 10 14, and 7 10 14 1-MeV neutrons equivalent (neq)/cm 2.
Abstract: Anticipating the requirement for highly radiation-tolerant silicon microstrip sensors suitable for the SLHC application, we have fabricated n-in-p microstrip sensors in p-FZ and p-MCZ industrial wafers which we then irradiated with 70 MeV protons. Studies were made of the leakage current, onset of microdischarge, body capacitance, charge collection efficiency, and n-strip isolation at the fluences of nil, 0.7 10 14 , and 7 10 14 1-MeV neutrons equivalent (neq)/cm 2 . The bias and edge structure achieved holding the bias voltages up to 1000 V. The full depletion voltages were about 160, 250, and 600 V in the p-FZ and 1190, 500, and 840 V in the p-MCZ at nil, low, and high fluences, respectively. The radiation damage helped to reduce the density of electron accumulation layer. The strip isolation in the p-MCZ sensors was found to be much better than in the p-FZ sensors; even the no-isolation structure isolated the strips at nil fluence at bias voltage above 50 V. The lower density of electron accumulation layer in the p-MCZ could be attributed to an order less interface trap density in the / 10 0S surface than that of / 11 1S, the negative potential in the inter-strip region by the bias voltage, and the possible effect of high oxygen content in the MCZ bulk. r 2007 Elsevier B.V. All rights reserved. PACS: 29.40.W; 81.40.W
20 citations
"Development of Radiation Hard ${\rm..." refers background in this paper
...The facility and early irradiation results are described elsewhere [11]....
[...]
01 Apr 2005-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the surface build-up Cu-polyimide flex-circuit technology with laser vias was applied to the ATLAS SCT barrel hybrid to be made in one piece from the connector to the electronics sections including cables.
Abstract: We applied the surface build-up Cu-polyimide flex-circuit technology with laser vias to the ATLAS SCT barrel hybrid to be made in one piece from the connector to the electronics sections including cables. The hybrids, reinforced with carbon–carbon substrates, provide mechanical strength, thermal conductivity, low-radiation length, and stability in application-specific integrated circuit (ASIC) operation. By following the design rules, we experienced little trouble in breaking the traces. The pitch adapter between the sensor and the ASICs was made of aluminum traces on glass substrate. We identified that the generation of whiskers around the wire-bonding feet was correlated with the hardness of metallized aluminum. The appropriate hardness has been achieved by keeping the temperature of the glasses as low as room temperature during the metallization. The argon plasma cleaning procedure cleaned the contamination on the gold pads of the hybrids for successful wire bonding, although it was unsuccessful in the aluminum of the pitch adapters.
15 citations
"Development of Radiation Hard ${\rm..." refers methods in this paper
...Since the current of the irradiated samples increases substantially and may deteriorate the noise performance, we measured the noise using an SCT ABCD3T readout chip and DAQ system [16], [17]....
[...]
KEK1
10 Dec 2006-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the authors report on new sensors with various n-strip isolation structures that have been designed and are being fabricated in the search for the best approach, including a 3D sensor for the Pixel layers and an n-in-p sensor with highvoltage operation capability for the SCT.
Abstract: The accelerator upgrade of the large hadron collider (LHC) to super-LHC is foreseen around the year 2015. The upgrade is to increase the luminosity to 10 35 cm −2 s −1 and to accumulate 3000 fb −1 . To cope with the increased occupancy and fluence, the transition radiation tracker (TRT) will be replaced with silicon microstrip sensors, and the semiconductor tracker (SCT) with short-strip silicon microstrip sensors. Both the ATLAS Pixel and SCT communities need to develop new sensors to work to fluences of 1×10 16 1-MeV-neq/cm 2 and to 8×10 14 , respectively. Technologies being investigated include a “3D sensor” for the Pixel layers, and an “n-in-p sensor” with high-voltage operation capability for the SCT. The “n-in-p sensor” requires n-strip isolation with high onset voltage of microdischarge. We report here on new sensors with various n-strip isolation structures that have been designed and are being fabricated in the search for the best approach.
12 citations
01 Jan 1984
10 citations