Journal ArticleDOI
Diffusion characteristics of boron and phosphorus in polycrystalline silicon
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TLDR
In this paper, a more realistic model of the inhomogeneous nature of diffusion in polycrystalline samples was presented, showing that even though the relation between diffusion depth and time may be the same from bulk and grain boundary models, the diffusion coefficients determined from assuming the homogeneous semi-infinite solid may be several orders of magnitude in error.About:
This article is published in Thin Solid Films.The article was published on 1983-02-18. It has received 28 citations till now. The article focuses on the topics: Grain boundary diffusion coefficient & Effective diffusion coefficient.read more
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Grain boundaries in semiconductors
TL;DR: In this article, a review of the available experimental and theoretical understanding on the structure and electronic properties of grain boundaries in semiconducting materials is presented, where high-resolution electron microscope images of interfaces are interpreted within the framework of the structural unit model of grain boundary, and the electronic properties are discussed with relation to the popular symmetric Schottky barrier model for charge trapping and potential barrier formation.
Journal ArticleDOI
Phosphorus diffusion in polycrystalline silicon
TL;DR: In this article, a two-dimensional diffusion model is used to find effective grain (Dg) and grain-boundary (Dgb) diffusion coefficients, which leads to Dgb ≤ 10Dg, which is significantly lower than what has been deduced from conventional, larger grained polysilicon.
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Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
Bin Han,Hisashi Takamizawa,Yasuo Shimizu,Koji Inoue,Yasuyoshi Nagai,Fumiko Yano,Yorinobu Kunimune,Masao Inoue,Akio Nishida +8 more
TL;DR: In this paper, the dopant diffusion path in n-and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field effect transistors (MOSFETs) was investigated using atom probe tomography, based on the annealing time dependence of dopant distribution at 900°C.
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Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures
TL;DR: In this paper, the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si 2 H 6 and ammonia NH 3 for the development of P + polysilicon gate metal oxide semiconductor (MOS) devices was investigated.
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Transmission‐line‐matrix modeling of grain‐boundary diffusion in thin films
TL;DR: In this article, the use of the transmission-line-matrix (TLM) method for analyzing the grain boundary and interfacial diffusion problems in thin films is demonstrated, and the results are compared with those of semi-infinite samples.
References
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Journal ArticleDOI
Calculation of Diffusion Penetration Curves for Surface and Grain Boundary Diffusion
TL;DR: In this paper, a mathematical analysis of grain boundary and surface diffusion is completed, assuming that grain boundary diffusion is analogous to the diffusion of heat along a thin copper foil imbedded in cork.
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Influence of dislocations on diffusion kinetics in solids with particular reference to the alkali halides
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CXXXVIII. Concentration contours in grain boundary diffusion
TL;DR: In this article, a simplified model for studying grain boundary diffusion of one metal into another was proposed, which has obvious application to the study of heat flow in a poorly conducting solid with a metallic fin.
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The analysis of grain boundary diffusion measurements
TL;DR: In this article, the exact solution of the grain boundary diffusion problem is evaluated numerically and the results presented in graphical form suitable for immediate application to the commoner types of experimental measurement of D?, the grain surface diffusion coefficient.