Diffusion inhibition against gold of ion beam synthesized buried silicon nitride layers in silicon
01 Oct 1988-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms (North-Holland)-Vol. 34, Iss: 4, pp 523-524
TL;DR: The ability of buried silicon nitride layers, produced by nitrogen implantation into silicon (330 keV, 1.2 × 1018 cm−2), to inhibit the diffusion of gold was tested as discussed by the authors.
Abstract: The ability of buried silicon nitride layers, produced by nitrogen implantation into silicon (330 keV, 1.2 × 1018 cm−2), to inhibit the diffusion of gold was tested. Buried amorphous layers characteristic for the as-implanted state as well as for postimplantation annealing at 1000°C show diffusion inhibition. This effect was not found for polycrystalline silicon nitride layers produced by annealing at 1200° C.
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01 Jun 1991-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied by using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopic analysis as mentioned in this paper.
Abstract: The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied. By using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopy we have shown that there is an interrelation between the structure of synthesized layer and the oxygen to nitrogen dose ratio. It has been found that for the chosen implantation and annealing regimes the synthesized structure: consists of buried dielectric, structurally dense, layers which have thicknesses of between 0.12 and 0.185 μm. When the nitrogen to oxygen dose ratio is 3.5, the whole buried layer is amorphous and the interfaces of the buried layer are perfect.
15 citations
TL;DR: The emerging generation of high current and high energy ion implanters allows for implanting large impurity concentrations and extending the field of ion beam applications beyond the limits of well established industrial doping techniques towards material synthesis.
10 citations
TL;DR: In this paper, a thorough transmission electron microscope study of the sequential N and O implantation in Si is reported, and it is shown that the resulting microstructure strongly depends on the implantation sequence and dose.
Abstract: Silicon-on-insulator (SOI) structures can be obtained by the combined implantation of oxygen and nitrogen into silicon A thorough transmission electron microscope study of the sequential N and O implantation in Si is reported It is shown that the resulting microstructure strongly depends on the implantation sequence and dose In general the buried layer remains amorphous Only in one case did the lower part of the buried layer crystallize in the α-Si3N4 phase When nitrogen is implanted prior to oxygen, α-Si3N4 precipitates are formed below the buried layer They contain a considerable portion of the implanted nitrogen A particular orientation relationship was found to exist between the α-Si3N4 precipitate and the Si matrix; it was determined as (001)αSi3N4//{111}Si
8 citations
01 Jan 1995
TL;DR: In this paper, the authors proposed the use of ion beam processing in modern semiconductor technology in the area of VLSI and ULSI (Ultra Large Scale Integration) in order to produce integrated circuits of high packing density, low power consumption and high speed.
Abstract: During the last few years ion beam processing penetrated very aggressively in many branches of advanced solid state technology. This holds also for the modern semiconductor technology in the area of VLSI (Very Large Scale Integration) and ULSI (Ultra Large Scale Integration). SOI (Silicon-on-Insulator) is one of the most discussed candidates of this branch offering the possibility to produce integrated circuits of high packing density, low power consumption and high speed.
6 citations
TL;DR: In this article, the authors compared the nitrogen distribution profiles for high dose nitrogen implantation on a silicon target with experimental profiles, and concluded that both the synthesized silicon nitride and the excess, unbonded nitrogen are in a high density, high pressure state.
Abstract: Computed nitrogen distributions for high dose nitrogen implantation ona silicon target are compared with experimental profiles. The energy range of the incoming ions covers an area, where most of the experimental effort in the field of implantation synthesis of buried silicon nitride layers is concentrated. The calculated nitrogen distribution profiles reproduce fairly well both the shape and, with increasing doses, also the trend of the peak of the experimental profiles. Considering the parameters ofthe calculation it must be concluded that both the synthesized silicon nitride and the excess, unbonded nitrogen are in a high density, high pressure state.
Modellrechnungen zur Gewinnung der Stickstoffverteilung bei der Hochdosisimplantation von Stickstoffionen in Siliziumtargets werden mit experimentellen Stickstoffprofilen verglichen. Die Einschusenergie der Ionen liegt dabei in solchen Bereichen, wo bisher die meisten Experimente zur Synthese vergrabener Siliziumnitrid-Schichten durchgefuhrt worden sind. Die berechneten Stickstoffverteilungen reproduzieren die Formder gemessenen Profile, sie spiegeln auch den Trend der Verteilungsmaximamit wachsender Einschusdosis recht gut wider. Ein Fit der berechneten Stickstoffverteilungen an die experimentellen Profile fuhrt zu dem Schlus, das sowohl das entstehende Siliziumnitrid als auch der uberflussige, ungebundene Stickstoff eine hohe Dichte hat und unter hohem Druck steht.
5 citations
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161 citations
TL;DR: In this article, the gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated, and the buried oxide does not appear to stop the movement of the Cu.
Abstract: Gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated. Cr tends to segregate to the surface Si‐SiO2 interface; only a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.
32 citations
01 Jan 1987-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this article, annealing leads to the transformation of the Gaussian profiles into rectangular ones if the maximum concentration of the as-implanted distribution does not exceed the value necessary for Si3N4 stoichiometry.
Abstract: SOI (silicon on insulator)-structures were produced by implantation of 330 keV, 14N+-ions with doses ranging from 0.9 to 1.5 × 1018 cm−2 at a target temperature of 500°C into monocrystalline silicon to form buried silicon nitride layers. Post-implantation annealing was done at 1200°C up to 5 h. In this manner silicon nitride compounds with different stoichiometry and structure are produced. After implantation amorphous layers with Gaussian nitrogen profiles up to overstoichiometric concentrations are formed. Annealing leads to the transformation of the Gaussian profiles into rectangular ones if the maximum concentration of the as-implanted distribution does not exceed the value necessary for Si3N4 stoichiometry. In all cases the interfaces between the buried layer and the neighbouring silicon are steep and the structure of the silicon nitride is crystalline. For stoichiometric and overstoichiometric layers a high resistivity in the range of 1014 to 1016 Ω cm was found. After annealing monocrystalline silicon top layers of high quality are formed. A test is reported on the reamorphization of crystalline Si3N4. The results are promising.
30 citations
TL;DR: Copper is inadvertently introduced as an impurity during the formation of silicon-on-insulator structures by high fluence oxygen implantation as mentioned in this paper, which causes the copper to diffuse from the silicon surface through the oxide and be preferentially gettered to dislocations that originate at the oxide-silicon substrate interface.
Abstract: Copper is shown to be inadvertently introduced as an impurity during the formation of silicon‐on‐insulator structures by high fluence oxygen implantation. Postimplantation annealing causes the copper to diffuse from the silicon surface through the oxide and be preferentially gettered to dislocations that originate at the oxide‐silicon substrate interface. The concentration of copper in the silicon surface layer is reduced by a factor of two, and no copper remains in the buried oxide layer. Sufficient gettering occurs for the fabrication of fully functional n‐channel metal‐oxide‐semiconductor field‐effect‐transistors, with, however, a low yield. Also, the effective carrier mobility in the inversion layer of the transistors is severely degraded, and this is attributed primarily to copper retained in that layer.
24 citations
TL;DR: Using Rutherford backscattering spectrometry, the redistribution and gettering of implanted gold was investigated in silicon-on-insulator structures produced by high-dose nitrogen implantation as discussed by the authors.
Abstract: Using Rutherford backscattering spectrometry the redistribution and gettering of implanted gold was investigated in silicon-on-insulator structures produced by high-dose nitrogen implantation. The gettering efficiency of a structure annealed at 1000 degrees C containing a highly damaged silicon region near to the buried compound layer is more pronounced than that of a 1200 degrees C-annealed structure with a lightly damaged silicon top layer. Gettering takes place at the interregion between silicon and silicon nitride.
9 citations