Direct observation of a widely tunable bandgap in bilayer graphene
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...Bandgaps have also been induced by applying a perpendicular electric field in bilayer graphen...
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...Top gated graphene-based MOSFETs have been prepared using exfoliated graphene [174–177], CVD grown graphene on Ni and Cu substrate [44] and epitaxial graphene [178,179], whereas, Al2O3, SiO2 and HfO2 dielectric materials have been used for top gate [171]....
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...[124,128,168] and in graphene quantum dots [169], and by biasing bi-layer [21,170,171] graphene....
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...…external electric field perpendicular to the layers, ẑ-direction) in the electrochemical potential between the two layers, which would translate into an effective bandgap opening near the Dirac point (Castro et al., 2007; Ohta et al., 2006; Oostinga et al., 2008; Zhang et al., 2009c) Expanding Eq....
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...om STM dI=dV map. Adapted from Deshpande et al. (2009b). 60 nm 60 nm constant current STM topography, (c), and simultaneous dI=dV map, (d) at the CNP for SLG, (V bias = 0:225 VI= 20 pA). Adapted from Zhang et al. (2009b). in the Quantum Hall regime and the amplitude extracted from the probability distribution of the density extracted from the imaging results, Martin et al. (2008) obtained the upper bound of 30 nm f...
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...…occuring not only in nanoribbons but also in biased bilayer graphene where the gap measured in transport experiments appears to be substantially smaller than the theoretically calculated bandgap (Oostinga et al., 2008) or even the measured optical gap (Mak et al., 2009; Zhang et al., 2009c)....
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...twouid model) but in excellent agreement with the presence of inhomogeneously distributed electron and hole regions of equal mobility. The rst STM experiments on exfoliated graphene were performed by Zhang et al. (2009b). The STM experiments provided the most direct quantitative characterization of the carrier density distribution of exfoliated graphene. Fig. 32 (c) shows the topography of a 60 hn60 nm2 area of exf...
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...ac fermions. Second, the opening of an intrinsic spectral gap in the graphene band structure by using graphene nanoribbons (Adam et al., 2008a; Han et al., 2007) or biased BLG (Oostinga et al., 2008; Zhang et al., 2009c) immediately introduces an insulating phase around the charge neutrality point. These two features indicate that the insulating behavior in graphene and 2D semiconductors is connected more with the ...
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References
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