Journal ArticleDOI
Do hot electrons cause excess noise
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In this paper, the authors solved the Langevin Boltzmann equation for the first time and showed that the contribution of hot electrons in a velocity saturation region is negligible, which corroborates previous findings based on the less accurate impedance field method.Abstract:
The open question whether excess noise is due to hot electrons or not is addressed for the first time by solving the full Langevin Boltzmann equation. Not only the bulk case is analyzed but also devices. In contrast to the well-known Monte Carlo method this new approach allows the investigation of the spatial origin of the terminal current noise. It is shown, that excess noise in devices is mainly due to cold or warm electrons. The contribution of hot electrons in a velocity saturation region is found to be negligible. This corroborates previous findings based on the less accurate impedance field method.read more
Citations
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Journal ArticleDOI
A Deterministic Approach to RF Noise in Silicon Devices Based on the Langevin–Boltzmann Equation
TL;DR: In this paper, a new deterministic approach to electron noise based on a spherical harmonics expansion (SHE) of the Langevin-Boltzmann equation in the frequency domain is presented for silicon devices.
Journal ArticleDOI
Effects of Forward Body Bias on High-Frequency Noise in 0.18- $\mu{\hbox{m}}$ CMOS Transistors
TL;DR: In this paper, the effects of forward body bias (FBB) on high-frequency noise performance in deep-submicrometer CMOS transistors are presented, and it was observed that noise parameters NFmin and R n in both N and PMOS increased significantly under FBB.
Proceedings ArticleDOI
Numerical Simulation of RF Noise in Si Devices
TL;DR: The workhorse of today's TCAD is the drift-diffusion (DD) model, which in the special formulation of the impedance field method has been used for a long time for noise calculation, but there has been much debate over its noise source as discussed by the authors.
Journal ArticleDOI
Microscopic simulation of RF noise in junctionless nanowire transistors
Maziar Noei,Christoph Jungemann +1 more
TL;DR: In this article, a deterministic solver for the analysis of microscopic noise and small-signal fluctuations in junctionless nanowire field effect transistors is presented, which is based on a selfconsistent and simultaneous solution of the Poisson/Schrodinger/Boltzmann equations.
Proceedings ArticleDOI
Experimental Study on the Role of Hot Carrier Induced Damage on High frequency Noise in Deep Submicron NMOSFETs
TL;DR: In this article, the impact of hot carrier induced interface damage and its spatial location on RF noise in deep sub-micrometer NMOSFETs was studied and it was demonstrated that the presence of interface states at source side shows much greater impact on the degradation of NFmin and Rn.
References
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Book
Probability, random variables and stochastic processes
TL;DR: This chapter discusses the concept of a Random Variable, the meaning of Probability, and the axioms of probability in terms of Markov Chains and Queueing Theory.
Journal ArticleDOI
Electronic properties of two-dimensional systems
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
Book
Noise in solid state devices and circuits
TL;DR: In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.
Book
The Monte Carlo Method for Semiconductor Device Simulation
Carlo Jacoboni,Paolo Lugli +1 more
TL;DR: In this paper, the authors present a review of the properties of Semiconductor devices and compare them with the Monte Carlo simulation of the two-dimensional electron gas (2DEG) model.