Proceedings ArticleDOI
Do hot electrons produce excess noise
Christoph Jungemann,Bernd Meinerzhagen +1 more
- pp 329-332
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TLDR
In this paper, the Langevin Boltzmann equation was used to investigate the spatial origin of the terminal current noise in the case of hot or cold electrons, and it was shown that the contribution of hot electrons in a velocity-saturation region is negligible.Abstract:
The open question whether excess noise is due to hot electrons or not is addressed for the first time by solving the Langevin Boltzmann equation. Not only is the bulk case analyzed but also devices. In contrast to the well-known Monte Carlo method this new approach allows the investigation of the spatial origin of the terminal current noise. It is shown, that excess noise is mainly due to cold or warm electrons, whereas the contribution of hot electrons in a velocity-saturation region is negligible.read more
Citations
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Proceedings ArticleDOI
The Monte Carlo method for semiconductor device simulation
TL;DR: If the authority ascribed to Monte Carlo models of devices at 1/spl mu/m feature size is to be maintained, modelling of the fundamental physics must be further improved, and the device model must be made more realistic.
Journal ArticleDOI
RF-Noise Modeling in Advanced CMOS Technologies
G.D.J. Smit,Andries J. Scholten,Ralf Pijper,L. F. Tiemeijer,Ramses van der Toorn,D. B. M. Klaassen +5 more
TL;DR: In this article, a detailed derivation and discussion are presented of the microscopic excess noise model, which is shown to qualitatively explain the observed noise (across bias and geometry) in a wide range of commercially available sub-100nm foundry processes.
Journal ArticleDOI
Experimental Demonstration and Modeling of Excess RF Noise in Sub-100-nm CMOS Technologies
G.D.J. Smit,Andries J. Scholten,Ralf Pijper,Ronald van Langevelde,L. F. Tiemeijer,D. B. M. Klaassen +5 more
TL;DR: This work presents RF noise measurements on four commercial advanced CMOS technologies down to the 45-nm node, and proves the existence of excess noise and presents an electric-field-dependent extension of Nyquist's law that represents a nonequilibrium-transport correction to diffusive transport.
References
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Book
Electronic noise and fluctuations in solids
TL;DR: A comprehensive and complete review of flicker (1/f) noise in the literature can be found in this paper, focusing on the physics of electronic fluctuations (noise) in solids.
Proceedings ArticleDOI
The Monte Carlo method for semiconductor device simulation
TL;DR: If the authority ascribed to Monte Carlo models of devices at 1/spl mu/m feature size is to be maintained, modelling of the fundamental physics must be further improved, and the device model must be made more realistic.
Journal ArticleDOI
Noise modeling for RF CMOS circuit simulation
A.J. Scholten,L.F. Tiemeijer,R. van Langevelde,R.J. Havens,A.T.A. Zegers-van Duijnhoven,V. C. Venezia +5 more
TL;DR: In this paper, a nonquasi-static channel segmentation model was proposed to predict both drain and gate current noise in 0.18-/spl mu/m CMOS technology.
Journal ArticleDOI
Diffusion coefficient of electrons in silicon
TL;DR: In this article, an experimental and theoretical analysis of the diffusivity of electrons in Si as function of temperature, field strength, and field direction has been performed with the Monte Carlo procedure, which correctly interprets both the new diffusion data and other well-established electron transport properties.