Doping of SiC by Implantation of Boron and Aluminum
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Cites background from "Doping of SiC by Implantation of Bo..."
...For the aspect of device processes, SiC has an advantage of both n- and p-type conduction in a wide range by either in situ doping [1], [2] or selective ion implantation [3], [4]....
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139 citations
References
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Additional excerpts
...[9] J. Reinke, S. Greulich-Weber, J.-M. Spaeth, E. N. Kalabukhova, S. N. Lukin, and E. N. Mokhov, Inst. Phys....
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...[18] V. S. Ballandovich and E. N. Mokhov, Soviet Phys....
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...[6] A. G. Zubatov, J. M. Zaritskii, S. N. Lukin, E. N. Mokhov, and V. G. Stepanov, Soviet Phys....
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...Vodakov and Mokhov [24] report that the solubility of Al in SiC exceeds the one of B; these authors determined a solubility of Al and B equal to 1:1 1021 and 1:5 1020 cmÿ3, respectively, at 2300 C (using the Si face for the diffusion process)....
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...Based on double-correlated deep level transient spectroscopy (DDLTS) investigations, Suttrop et al. [17] propose that the D-center is donor-like, while Ballandovich and Mokhov [18], based on photocapacitance investigations, claim that the D-center is acceptor-like....
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