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Proceedings ArticleDOI

Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

TL;DR: In this paper, a single-equation inversion-charge-based drain current model for SDGFETs based on the drift-diffusion transport mechanism using an exponent n=2 for velocity saturation was presented.
Abstract: In this paper we present for the first time a single-equation inversion-charge-based drain current model for SDGFETs based on the drift-diffusion transport mechanism using an exponent n=2 for velocity saturation, that is neither threshold voltage-based nor charge-sheet-based. Because it is not based on any charge sheet models, it automatically models phenomena specific to ultra-thin DGFETs such as volume inversion. We present the model equations and the final results showing analytical versus 2D device simulation results.
Citations
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Journal ArticleDOI
TL;DR: In this paper, a Monte Carlo event generator for the simulation of QCD-instanton induced processes in deep-inelastic scattering (HERA) is described. But this generator is designed as an ''add-on'' hard process generator interfaced to the general hadronic event simulation package HERWIG.
Abstract: We describe a Monte Carlo event generator for the simulation of QCD-instanton induced processes in deep-inelastic scattering (HERA). The QCDINS package is designed as an ``add-on'' hard process generator interfaced to the general hadronic event simulation package HERWIG. It incorporates the theoretically predicted production rate for instanton-induced events as well as the essential characteristics that have been derived theoretically for the partonic final state of instanton-induced processes: notably, the flavour democratic and isotropic production of the partonic final state, energy weight factors different for gluons and quarks, and a high average multiplicity O(10) of produced partons with a Poisson distribution of the gluon multiplicity. While the subsequent perturbative evolution of the generated partons is always handled by the HERWIG package, the final hadronization step may optionally be performed also by means of the general hadronic event simulation package JETSET.

28 citations

References
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Book
01 Jan 1958
Abstract: If f(x) represents the function a1x n + a2x n −1 + … + an + 1 and f(a) denotes the value of the function when x is replaced by the value a, then if $$\matrix{ {f\left( x \right) = 2{x^3} - 3{x^2} + 5x - 6} \cr {f\left( 1 \right) = 2 - 3 + 5 - 6 = - 2} \cr {f\left( { - 1} \right) = - 2 - 3 - 5 - 6 = - 16} \cr } $$ and $$f\left( {2.5} \right) = \ldots \ldots \ldots .$$ for $$\matrix{ {f\left( {2.5} \right) = 2{{\left( {2.5} \right)}^3} - 3{{\left( {2.5} \right)}^2} + 5\left( {2.5} \right) - 6} \cr { = 31.25 - 18.75 + 12.5 - 6 = \underline {19} } \cr } $$

754 citations


"Drain current model for undoped sym..." refers background in this paper

  • ...This can be solved non-iteratively [11] by neglecting the m5 term with negligible loss of accuracy, in which case it becomes a 4 degree polynomial....

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Journal ArticleDOI
TL;DR: In this article, a continuous analytic currentvoltage model for double-gate MOSFETs is presented, which is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation.
Abstract: This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I/sub ds/(V/sub g/,V/sub ds/) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally suited for compact modeling. By preserving the proper physics, this model readily depicts "volume inversion" in symmetric DG MOSFETs-a distinctively noncharge-sheet phenomenon that cannot be reproduced by standard charge-sheet based I-V models. It is shown that the I-V curves generated by the analytic model are in complete agreement with two-dimensional numerical simulation results for all ranges of gate and drain voltages.

361 citations

Journal ArticleDOI
TL;DR: In this article, an analytic potential model for long-channel symmetric and asymmetric double-gate MOSFETs is presented, which is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation.
Abstract: This paper presents an analytic potential model for long-channel symmetric and asymmetric double-gate (DG) MOSFETs. The model is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation. By preserving the proper physics, volume inversion in the subthreshold region is well accounted for in the model. The resulting analytic expressions of the drain-current, terminal charges, and capacitances for long-channel DG MOSFETs are continuous in all operation regions, i.e., linear, saturation, and subthreshold, making it suitable for compact modeling. As no fitting parameters are invoked throughout the derivation, the model is physical and predictive. All parameter formulas are validated by two-dimensional numerical simulations with excellent agreement. The model has been implemented in Simulation Program with Integrated Circuit Emphasis version 3 (SPICE3), and the feasibility is demonstrated by the transient analysis of sample CMOS circuits.

190 citations

Journal ArticleDOI
TL;DR: In this article, a charge-based model for undoped DG MOSFETs under symmetrical operation is proposed, which aims at giving a comprehensive understanding of the device from the design strategy.
Abstract: We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique gms/ID design methodology for DG architectures. © 2004 Elsevier Ltd. All rights reserved.

175 citations