Drain Current Optimization in DIBS-Grown MgZnO/CdZnO HFET
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Cites background from "Drain Current Optimization in DIBS-..."
...application displaying strong 2-D electron gas density (2DEG) [13], [14]....
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References
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"Drain Current Optimization in DIBS-..." refers background in this paper
...ZnO is being explored as a viable option for heterostructure field-effect transistor (HFET) applications due to the strong polarization fields in the MgZnO/ZnO (MZO) heterostructure [1], [2]....
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947 citations
"Drain Current Optimization in DIBS-..." refers background in this paper
...The value of the net resistance (Rt) for different spacing d of metal bars in linear TLM configurations is proportional to the contact resistance (Rc) of the metal and semiconductor interface and sheet resistance (Rs) of the material between the two metal bars in consideration [19]....
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464 citations
"Drain Current Optimization in DIBS-..." refers background in this paper
...The least ρc value, for combination I, is generally attributed to the Ni layer preventing Au diffusion through Al and Ti that can degrade the ohmic nature of the metal–semiconductor contact [18]....
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407 citations
"Drain Current Optimization in DIBS-..." refers background in this paper
...For polycrystalline materials, higher distance between the two contact pads is plagued by inconsistency and extreme sensitivity to fabrication conditions [20], [21]....
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259 citations
"Drain Current Optimization in DIBS-..." refers background or methods in this paper
...works in [25] and [26], respectively, have gated structures, and the DIBS-grown MCO-II-based HFET fabricated in this article is a gateless structure....
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...5(c) shows the comparison of the Id values achieved in 800 ◦C annealed MCO-II gateless HFET, grown by DIBS, with those obtained from AlGaN/GaN-based [25] and MZObased HFETs [26], both grown by MBE....
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...It should be noted here that the dimensions of D and tb for MBE-grown MZO (D = 3 μm, tb = 2 nm) and AlGaN/GaN-based (D = 5 μm, tb = 40 nm) HFETs are different from the as-developed MCO-II-based HFET (D = 10 μm, tb = 50 nm)....
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...Therefore, in order to carry out a comparative analysis among these three structures, the values of Id for the HFET structures from the works in [25] and [26] are considered at Vg = 0 V....
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