Drain Current Optimization in DIBS-Grown MgZnO/CdZnO HFET
Citations
10 citations
Cites background from "Drain Current Optimization in DIBS-..."
...application displaying strong 2-D electron gas density (2DEG) [13], [14]....
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References
25 citations
"Drain Current Optimization in DIBS-..." refers background in this paper
...In addition, the use of abundant low-cost ZnO substrates [27], [28] will further decrease the unit device price of the DIBS-...
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24 citations
"Drain Current Optimization in DIBS-..." refers methods in this paper
...All the layers were deposited using commercially available sputtering targets [10]....
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...This article attempts to establish a DIBS-grown MCO heterostructure for viable HFET applications alongside the MBEgrown MZO, due to several advantages of the DIBS growth technique, such as superior compositional stoichiometry and thin-film uniformity with better film adhesion over a larger substrate surface area [10], along with its large-area electronics compatibility and, hence, cost-effectiveness....
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23 citations
"Drain Current Optimization in DIBS-..." refers result in this paper
...and dislocation density at the heterointerface has been reported to improve the μ values in the MZO heterostructures, in the previous literature studies [16], [17]....
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23 citations
"Drain Current Optimization in DIBS-..." refers background in this paper
...this article introduces a 30-nm Y2O3 (yttria), optimized for cubic crystallinity in [11], as a spacer layer between the Si substrate and the CdZnO buffer layer....
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12 citations
"Drain Current Optimization in DIBS-..." refers result in this paper
...and dislocation density at the heterointerface has been reported to improve the μ values in the MZO heterostructures, in the previous literature studies [16], [17]....
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