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Proceedings ArticleDOI

Effect of air annealing on structure and magnetic properties of Sn1-xFexO2 thin films

24 May 2016-Vol. 1731, Iss: 1, pp 130019
TL;DR: In this paper, the X-ray diffraction study showed that all the thin films annealed at different temperatures were in tetragonal rutile structure of SnO2 and confirmed the presence of Fe and Sn and O in the films.
Abstract: Sn1-xFexO2 (x = 0.07) thin films were prepared on to glass substrates using flash evaporation technique and annealed in air at different temperatures. The X-ray diffraction study showsed that all the thin films annealed at different temperatures were in tetragonal rutile structure of SnO2. The Elemental analysis confirms the presence of Fe and Sn and O in the films. The magnetic measurements were carried out using vibrating sample magnetometer and found that the strength of magnetization decreased with increase of annealing temperature.
Citations
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Journal ArticleDOI
TL;DR: In this article , the authors investigated the ferromagnetism of Fe-and Ni-doped SnO2 (1 1 0) surfaces and the regulation of the surface magnetic properties by the oxygen vacancy and adsorbed O2 molecule.

1 citations

References
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Journal ArticleDOI
14 Aug 1998-Science
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Abstract: REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.

4,339 citations

Journal ArticleDOI
TL;DR: In this article, Ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen vacancy (F center) is proposed to explain the high Curie temperature.
Abstract: Thin films grown by pulsed-laser deposition from targets of Sn0.95Fe0.05O2 are transparent ferromagnets with Curie temperature and spontaneous magnetization of 610 K and 2.2 A m2 kg−1, respectively. The 57Fe Mossbauer spectra show the iron is all high-spin Fe3+ but the films are magnetically inhomogeneous on an atomic scale, with only 23% of the iron ordering magnetically. The net ferromagnetic moment per ordered iron ion, 1.8 μB, is greater than for any simple iron oxide with superexchange interactions. Ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen vacancy (F center) is proposed to explain the high Curie temperature.

868 citations

Journal ArticleDOI
TL;DR: In this article, the electrical properties of Sb-doped SnO2 films prepared by the sol-gel dip-coating method have been investigated using X-ray photoelectron spectroscopy (XPS) technique to determine the actual Sb content in the layers.

203 citations

Journal ArticleDOI
TL;DR: In this paper, Ni-doped SnO2 films on LaAlO3 substrates have a large magnetic moment of about 2 µB/Ni, while films grown under the same conditions on SrTiO3 and Al2O3 substrate have a magnetic moment one order smaller.
Abstract: Transparent Ni-doped SnO2 thin films grown by the pulsed laser deposition technique on LaAlO3, SrTiO3 as well as R-cut Al2O3 substrates all show room-temperature ferromagnetism (FM). While the Ni-doped SnO2 films on LaAlO3 substrates have a large magnetic moment of about 2 µB/Ni, films grown under the same conditions on SrTiO3 and Al2O3 substrates have a magnetic moment of one order smaller. Magnetic force microscopy measurements confirmed that the Ni:SnO2 films on LaAlO3 are magnetically homogeneous at nanometre-scales, and the FM in the films comes from the doped matrix.

105 citations

Journal ArticleDOI
TL;DR: In this article, the effect of Fe concentration on structural, optical, and magnetic properties of the (In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} powders have been systematically studied.

35 citations