# Effect of anisotropy on anomalous Hall effect in Tb―Fe thin films

TL;DR: In this paper, the electrical and Hall resistivities of TbxFe100−x thin films in the temperature range 13-300 K were investigated and the temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model.

Abstract: The electrical and Hall resistivities of TbxFe100−x thin films in the temperature range 13–300 K were investigated. The sign of Hall resistivity at 300 K is found to change from positive for x=28 film to negative for x=30 film, in accordance with the compensation of Tb and Fe moments. All the films are seen to have planar magnetic anisotropy at 13 K. The temperature coefficients of electrical resistivities of the amorphous films with 19≤x≤51 are seen to be negative. The temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model. The temperature dependences of Hall resistivities of the x=22 and 41 films are seen to exhibit a nonmonotonous behavior due to change in anisotropy from perpendicular to planar. The same behavior is considered for the explanation regarding the probable formation of Berry phase curvature in these films.

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TL;DR: In this article, the effect of processing parameters such as argon gas pressure (5, 10 and 15mTorr) and sputtering power (50 and 100 W) on the structure, microstructure and magnetic properties of dc magnetron sputtered Tb-Fe-Co films was investigated.

11 citations

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TL;DR: In this article, the influence of Tb25Fe61Co14 thin film thickness on the structural and magnetic properties has been systematically investigated by using of X-ray diffraction, scanning electron microscopy, transmission electron microscope, magnetization, and magneto-optic Kerr effect microscopy measurements.

6 citations

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TL;DR: In this paper, Tb x Fe 100 − x (with x = 11, 25, 31, 44, and 44) thin films were prepared with the substrates kept at a temperature of 300°C and the Hall resistivities and electrical resistivities were investigated in the temperature range 25 − 300 K in Tb 25 Fe 75 and Tb 31 Fe 69 and their metallic nature are indicators that the Tb-Fe films deposited at higher temperatures are more suitable for magneto optic data storage applications than their amorphous counterparts.

5 citations

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TL;DR: In this article, the effects of Tb content and annealing treatment on the phase composition, morphology, crystalline structure and magnetic properties were investigated, and the annealed TbxFe7Co3 (x = 0.6, 0.8) nanowires showed higher magnetic performance owing to the formation of hard magnetic phases, the interfacial elastic coupling between hard and soft phases and the coherent Fe3Tb/Co3Tsb interface which restrain the domain wall motion.

2 citations

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TL;DR: In this paper, the authors used DC magnetron sputter deposition to grow Sm 28 Fe 72 and Sm 32 Fe 68 films of 100nm thickness and their structure, magnetization, electrical and Hall resistance characteristics were investigated.

1 citations

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01 Jan 1956

TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.

Abstract: 1. Properties of X-rays. 2. Geometry of Crystals. 3. Diffraction I: Directions of Diffracted Beams. 4. Diffraction II: Intensities of Diffracted Beams. 5. Diffraction III: Non-Ideal Samples. 6. Laure Photographs. 7. Powder Photographs. 8. Diffractometer and Spectrometer. 9. Orientation and Quality of Single Crystals. 10. Structure of Polycrystalline Aggregates. 11. Determination of Crystal Structure. 12. Precise Parameter Measurements. 13. Phase-Diagram Determination. 14. Order-Disorder Transformation. 15. Chemical Analysis of X-ray Diffraction. 16. Chemical Analysis by X-ray Spectrometry. 17. Measurements of Residual Stress. 18. Polymers. 19. Small Angle Scatters. 20. Transmission Electron Microscope.

17,428 citations

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TL;DR: In this article, it was shown that the interband matrix elements of the applied electric potential energy combine with the spin-orbit perturbation to give a current perpendicular to both the field and the magnetization.

Abstract: Both the unusually large magnitude and strong temperature dependence of the extraordinary Hall effect in ferromagnetic materials can be understood as effects of the spin-orbit interaction of polarized conduction electrons. It is shown that the interband matrix elements of the applied electric potential energy combine with the spin-orbit perturbation to give a current perpendicular to both the field and the magnetization. Since the net effect of the spin-orbit interaction is proportional to the extent to which the electron spins are aligned, this current is proportional to the magnetization. The magnitude of the Hall constant is equal to the square of the ordinary resistivity multiplied by functions that are not very sensitive to temperature and impurity content. The experimental results behave in such a way also.

1,138 citations

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TL;DR: In this paper, the main Hall-effect mechanism was shown to be the main mechanism for the dc Hall effect for Fe, Ni, and their alloys above 100 K, while asymmetric scattering dominates below 100 K.

Abstract: The center of mass of a wave packet undergoes a discontinuous and finite sideways displacement on scattering by a central potential, in the presence of spin-orbit interaction. This is the main Hall-effect mechanism (${\ensuremath{\rho}}_{H}\ensuremath{\propto}{\ensuremath{\rho}}^{2}$) for Fe, Ni, and their alloys above 100 K, while asymmetric scattering dominates below 100 K. Displacement $\ensuremath{\Delta}y$ per actual collision is calculated by partial waves. In the case of Born expansion, the leading term of $\ensuremath{\Delta}y or \frac{{\ensuremath{\rho}}_{H}}{{\ensuremath{\rho}}^{2}}$ is of zero order in the scattering potential. The magnitude is predicted correctly ($\ensuremath{\Delta}y\ensuremath{\approx}{10}^{\ensuremath{-}10}\ensuremath{-}{10}^{\ensuremath{-}11}$ m) when using the effective spin-orbit Hamiltonian derived by Fivaz from spin-orbit interband mixing. The calculation of ${\ensuremath{\rho}}_{H}$ is extended to arbitrary ${\ensuremath{\omega}}_{c}\ensuremath{\tau}$ for compensated and un-compensated metals. Other nonclassical physical mechanisms proposed by Karplus and Luttinger and by Doniach and by Fivaz are spurious for the dc Hall effect.

992 citations

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TL;DR: It is shown that the magnetic monopole can appear in the crystal momentum space of solids in the accessible low-energy region in the context of the anomalous Hall effect.

Abstract: Efforts to find the magnetic monopole in real space have been made in cosmic rays and in particle accelerators, but there has not yet been any firm evidence for its existence because of its very heavy mass, ∼10 16 giga–electron volts We show that the magnetic monopole can appear in the crystal momentum space of solids in the accessible low-energy region (∼01 to 1 electron volts) in the context of the anomalous Hall effect We report experimental results together with first-principles calculations on the ferromagnetic crystal SrRuO 3 that provide evidence for the magnetic monopole in the crystal momentum space

816 citations