Effect of Annealing on Resistive Switching Behavior of PMMA Based RRAM
01 Dec 2018-
TL;DR: In this paper, a PMMA based Ag/PMMA/Ti/Glass RRAM devices are reported for their resistive switching behavior, they exhibited significantly low switching voltages (<1 V) and retention time upto 103 s.
Abstract: A PMMA based Ag/PMMA/Ti/Glass RRAM devices are reported for their resistive switching behavior. Switching performance was tested on three samples fabricated at different PMMA annealing temperatures. The switching voltages have shown a down trend with increasing annealing temperature. The Current on/off ratio and retention time also degrades with annealing temperature. The devices exhibited significantly low switching voltages (<1 V) and retention time upto 103 s. Annealing of PMMA at higher temperatures may result in softening of films resulting in lower switching voltages due to defects generation and easy charge migration. The conduction mechanism has been investigated by double log plot of I-V characteristics of device suggesting ohmic conduction at lower voltages in in HRS and in LRS. At higher voltages in HRS, space charge limited conduction dominates the conduction mechanism.
Citations
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TL;DR: In this paper , a spin-coated nanorod film is used as active layer for resistive memory devices by sandwiching nanoroder film between two electrodes with a switching voltage of 1.4 V.
1 citations
TL;DR: In this paper , the authors demonstrate a synergistic interface/electrode nanoengineering strategy to tune memory windows for low power operation and enhanced electrical readout in polymer devices; this approach is workable for most insulating or semiconducting polymeric mediums.
Abstract: Tuning memory windows is vital for cross-bar memory architectures with low power and free cross-talk. Herein, we demonstrate a synergistic interface/electrode nanoengineering strategy to tune memory windows for low power operation and enhanced electrical readout in polymer devices; this approach is workable for most insulating or semiconducting polymeric mediums. Through customizing the resistivity of selectively reduced graphene oxide nanoelectrodes, an inherent sub μA current is recorded in the programming storage state. The nanocavity of the polymer interface can reduce the switching voltage due to local electric field enhancement, thus leading to tunable memory windows. By stacking a selector onto the memory, the vertical architecture features dynamic memory kinetics, enabling cross-talk-free readout by suppressing sneak leakage current paths.
References
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TL;DR: New non-volatile memory devices store information using different physical mechanisms from those employed in today's memories and could achieve substantial improvements in computing performance and energy efficiency.
Abstract: New non-volatile memory devices store information using different physical mechanisms from those employed in today's memories and could achieve substantial improvements in computing performance and energy efficiency.
677 citations
"Effect of Annealing on Resistive Sw..." refers background in this paper
...For all these advantages, RRAM have the potential to be used in future technologies such as internet of things, artificial intelligence, cloud computing, HD displays, and neuromorphic computing [6]....
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TL;DR: This work provides an overview of the current understanding of bipolar-switching RRAM operation, reliability and scaling, and the stability of the low- and high-resistance states will be discussed in terms of conductance fluctuations and evolution in 1D filaments containing only a few atoms.
Abstract: With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven computation. Among the emerging memories, resistive switching memory (RRAM) raises strong interest due to its high speed, high density as a result of its simple two-terminal structure, and low cost of fabrication. The scaling projection of RRAM, however, requires a detailed understanding of switching mechanisms and there are potential reliability concerns regarding small device sizes. This work provides an overview of the current understanding of bipolar-switching RRAM operation, reliability and scaling. After reviewing the phenomenological and microscopic descriptions of the switching processes, the stability of the low- and high-resistance states will be discussed in terms of conductance fluctuations and evolution in 1D filaments containing only a few atoms. The scaling potential of RRAM will finally be addressed by reviewing the recent breakthroughs in multilevel operation and 3D architecture, making RRAM a strong competitor among future high-density memory solutions.
653 citations
"Effect of Annealing on Resistive Sw..." refers background or methods in this paper
...Many organic, metal oxides, perovskites, chalcogenides, and biopolymers have been used as switching layer in RRAM cell fabrication[2, 9-12]....
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...(>10 years at 85 οC), fast switching speed(< 1 ns), better noise margin, excellent scalability potential(<10 nm), and high read/write endurance cycles (>1012 cycles)[2-5]....
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TL;DR: In this paper, the authors provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field, and discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS.
Abstract: Resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ∼50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.
341 citations
"Effect of Annealing on Resistive Sw..." refers background in this paper
...In the past few years, extensive research has been conducted on resistive random access memories (RRAM) and it has emerged as an outstanding performer in the storage class memory [1]....
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TL;DR: In this article, the double forming process phenomenon revealing in ZrO2/HfO2 bilayer resistive random access memory structure is investigated, and the mechanism caused by the formation of TiON interfacial layer can be well explained by using the energy band diagram.
Abstract: In this Letter, the mechanism of double forming process phenomenon revealing in ZrO2/HfO2 bilayer resistive random access memory structure is investigated. This phenomenon caused by the formation of TiON interfacial layer can be well explained by using the energy band diagram. The TiON interfacial layer will be a tunneling barrier during the first forming process when a negative voltage applied on the device, while it will breakdown when applying a positive voltage. Besides, due to the double forming process, an asymmetric conductive filament with narrower size at ZrO2/HfO2 interface is formed in the device. The point for formation and rupture of the conductive filament can be confined at the ZrO2/HfO2 interface, and it will suppress the consumption of oxygen ions during endurance test. Therefore, high speed (40 ns) and large endurance (107 cycles) characteristics are achieved in this device structure.
104 citations
"Effect of Annealing on Resistive Sw..." refers background in this paper
...(>10 years at 85 οC), fast switching speed(< 1 ns), better noise margin, excellent scalability potential(<10 nm), and high read/write endurance cycles (>1012 cycles)[2-5]....
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TL;DR: It is demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V.
Abstract: Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention and endurance properties. We demonstrated that the fabricated metal/RGO/metal memory device exhibited excellent switching characteristics, with on/off ratio of two orders of magnitude and operated threshold switching voltage of less than 1 V. The studies on different cell diameter, thickness, scan voltages and period of time corroborate the reliability of the device as resistive random access memory. The microscopic origin of switching operation is governed by the establishment of conducting filaments due to the interface amorphous layer rupturing and the movement of oxygen in the GO layer. This interesting experimental finding indicates that device made up of thermally reduced GO shows more reliability for its use in next generation electronics devices.
94 citations
"Effect of Annealing on Resistive Sw..." refers background in this paper
...Among them, organic polymers such as poly(4-vinyl phenol), polyvinylpyrrolidone, graphene oxide, polymethyl methacrylate (PMMA), poly(N-vinylcarbazole) have been widely used for their easy and low temperature deposition processes [13-16]....
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