Effect of applied bias on Schottky interface to affect resistive switching in a memristive device
01 Jul 2020-
TL;DR: In this article, the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device was analyzed. And the authors demonstrated an analytical model that shows the effect that applied bias has on the surface of the metal and showed that the change in bias affects the distribution of bulk defects.
Abstract: Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatile memory technology. This work demonstrates an analytical model that shows the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device. The applied bias modulates the corresponding interface in terms of various interfacial electrical parameters. Besides, the change in bias affects the distribution of bulk defects primarily oxygen vacancies as well as non-lattice oxygen ions. This, in turn, also affects the corresponding resistance of bulk as well as other electrical parameters at the interface. Further conduction mechanism of the device with interfacial oxide formation as well as dissolution to impact resistive switching behavior has been elaborated.
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30 Jun 2009
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TL;DR: A comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century is provided in this paper, where the results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation.
Abstract: ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts...
621 citations
TL;DR: In this paper, the reproducible forming-free resistive switching behavior in rare earth-oxide Gd2O3 polycrystalline thin film was demonstrated, which is similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance states (LRS).
Abstract: The reproducible forming-free resistive switching (RS) behavior in rare-earth-oxide Gd2O3 polycrystalline thin film was demonstrated. The characteristic of this forming-free RS was similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance state (LRS). An ultrahigh resistance switching ratio from HRS to LRS of about six to seven orders of magnitude was achieved at a bias voltage of 0.6 V. Mechanism analysis indicated that the existence of metallic Gd in the Gd2O3 films plays an important role in the forming-free RS performance. Our work provides a novel material with interesting RS behavior, which is beneficial to deepen our understanding of the origin of RS phenomenon.
121 citations
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TL;DR: In this article, the authors report the electrical characteristics of room-temperature-fabricated Al/ZnO/Si memory devices and show that the resistive switching originates from the formation and dissolution of the AlOx barrier layer which are induced by the migration of the oxygen ions.
Abstract: We report the electrical characteristics of room-temperature-fabricated Al/ZnO/Si memory devices Stable and reproducible clockwise bipolar resistive switching phenomena with self-rectifying effects in the low resistance state were observed in this complementary metal oxide semiconductor compatible memory structure The current-voltage curve in different temperatures and the corresponding Arrhenius plot confirm the semiconducting conduction behavior of both the high resistance state and the low resistance state The conduction mechanisms are explained by the Poole-Frenkel emission and space-charge-limited conduction mechanisms for the high resistance state and the low resistance state, respectively It is proposed that the resistive switching originates from the formation and dissolution of the AlOx barrier layer which are induced by the migration of the oxygen ions
120 citations
TL;DR: In this article, dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps.
Abstract: We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free, stable, and reliable behavior to memory cells. Besides, sufficient non-lattice oxygen ions in the film play a crucial role in the resistive switching process. The AlOx interface layer is observed to strongly affect the switching mechanism in the memory device by altering the barrier at the Al/ZnO interface. The device shows stable switching behavior for >250 cycles with good retention and stable set/reset voltages.
70 citations
TL;DR: An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems.
Abstract: Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and 'learning behavior (LB)' are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.
45 citations