Effect of Bismuth Incorporation on the Growth Kinetics and Valence Band Structure for InP 1−x Bi x Grown Using Liquid Phase Epitaxy
01 Jan 2017-Vol. 178, pp 249-255
TL;DR: In this paper, a mathematical model based on the one dimensional diffusive transport of bismuth atoms has been used to study the concentration profile of the bistactite atoms during the liquid phase epitaxial growth of InPBi.
Abstract: A mathematical model based on the one dimensional diffusive transport of bismuth atoms has been used to study the concentration profile of the bismuth atoms during the liquid phase epitaxial growth of InPBi. This model is used to determine the growth kinetics at equally spaced layers in the proximity of the grown epitaxial interface. Various growth parameters such as growth temperature, melt supercooling and the continuous cooling ramp applied during growth have been optimized to find out the suitable conditions of growth. The thickness of the epitaxial layers as a function time is also estimated. Valence Band anticrossing (VBAC) model is used to determine the reduction in band gap and increase in spin-orbit splitting energy for InP1−xBix. The valence band structure of InPBi is modified due to the interaction of the Bi related impurity levels with the light hole (LH), heavy hole (HH) and spin-orbit split-off (SO) sub bands. A 12 × 12 Hamiltonian is solved to find out the valence band structure of InPBi in the direction.
Citations
More filters
01 Jan 1986
TL;DR: In this article, the structural properties of bismuth-bearing III-V semiconductor alloys were investigated theoretically and the bond energies and lengths for the zinc-blende Bi compounds and their diluted and concentrated alloys are calculated, and predictions for the mixing enthalpies, miscibility gaps and critical temperatures were made.
Abstract: Materials currently used for detection in the infrared spectral region have notoriously poor structural properties. In search of a better narrow‐gap material, we have addressed the structural properties of bismuth‐bearing III‐V semiconductor alloys theoretically. Because the Bi compounds are not known to form zinc‐blende structures, only the anion‐substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow‐gap semiconductors. We calculate the bond energies and lengths for the zinc‐blende Bi compounds and their diluted and concentrated alloys. Strain coefficients for the compounds are calculated, and predictions for the mixing enthalpies, miscibility gaps, and critical temperatures are made. Miscibility calculations indicate that InSbBi will be the most miscible, and because of the large lattice mismatch of the constituents, InPBi will be the most difficult to mix. Tendencies toward cluster formation and deviations from randomness in the alloys are considered. Calculations of the hardn...
55 citations
References
More filters
Book•
31 Dec 1959
TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Abstract: This classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems.
21,807 citations
TL;DR: In this paper, the authors show that the band gap bowing trend observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model.
Abstract: We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model. Hybridization of the extended $p$-like states comprising the valence band of the host semiconductor with the close-lying localized $p$-like states of Sb or Bi leads to a nonlinear shift of the valence-band edge and a reduction of the band gap. The two alloys $\mathrm{Ga}{\mathrm{Sb}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}$ and $\mathrm{Ga}{\mathrm{Bi}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}$ are explored in detail, and the results are extrapolated to additional systems.
361 citations
TL;DR: The optical properties of GaBixAs1-x (004 < x < 008) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy.
Abstract: The optical properties of GaBixAs1-x (004< x< 008) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy The alloys exhibit a strong reduction in the bandgap as well as an increase in the spin-orbit splitting energy with increasing Bi concentration These observations are explained by a valence band anticrossing model, which shows that a restructuring of the valence band occurs as the result of an anticrossing interaction between the extended states of the GaAs valence band and the resonant T2 states of the Bi atoms
303 citations
TL;DR: In this paper, the authors developed an atomistic, nearest-neighbor tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs and demonstrated that the observed strong variation of the band gap and spin-orbit-splitting energy with Bi composition can be well explained in terms of a BAC interaction between the extended states of the GaAs valence band edge and highly localized Bi-related defect states lying in the band, with the change in ${E}_{g}$ also having a significant contribution from a
Abstract: We develop an atomistic, nearest-neighbor $s{p}^{3}{s}^{*}$ tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we calculate that the incorporation of dilute concentrations of Bi in GaP introduces Bi-related defect states in the band gap, which interact with the host matrix valence band edge via a Bi composition dependent band anticrossing (BAC) interaction. By extending this analysis to GaBi${}_{x}$As${}_{1\ensuremath{-}x}$, we demonstrate that the observed strong variation of the band gap $({E}_{g})$ and spin-orbit-splitting energy $({\ensuremath{\Delta}}_{\text{SO}})$ with Bi composition can be well explained in terms of a BAC interaction between the extended states of the GaAs valence band edge and highly localized Bi-related defect states lying in the valence band, with the change in ${E}_{g}$ also having a significant contribution from a conventional alloy reduction in the conduction band edge energy. Our calculated values of ${E}_{g}$ and ${\ensuremath{\Delta}}_{\text{SO}}$ are in good agreement with experiment throughout the investigated composition range ($x\ensuremath{\le}13$%). In particular, our calculations reproduce the experimentally observed crossover to an ${E}_{g}l{\ensuremath{\Delta}}_{\text{SO}}$ regime at approximately 10.5% Bi composition in bulk GaBi${}_{x}$As${}_{1\ensuremath{-}x}$. Recent x-ray spectroscopy measurements have indicated the presence of Bi pairs and clusters even for Bi compositions as low as 2%. We include a systematic study of different Bi nearest-neighbor environments in the alloy to achieve a quantitative understanding of the effect of Bi pairing and clustering on the GaBi${}_{x}$As${}_{1\ensuremath{-}x}$ electronic structure.
208 citations
TL;DR: In this article, the concentration profiles of solute at successive intervals of time in front of a crystal interface growing under the normal conditions of liquid phase epitaxy were used to calculate the growth rate, and hence the amount etched or grown as a function of time.
82 citations