Journal ArticleDOI
Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,A. T. Kalghatgi,S. B. Krupanidhi +7 more
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TLDR
In this paper, the influence of carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is discussed, and the position of the Fermi-level in InN films was modulated by the carrier concentration.About:
This article is published in Solid State Communications.The article was published on 2012-09-01. It has received 3 citations till now. The article focuses on the topics: Schottky diode & Heterojunction.read more
Citations
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Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Journal ArticleDOI
Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
Book ChapterDOI
Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications
Abstract: III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/high-frequency field-effect transistors (FETs), and tandem solar cells because of their inherent properties. However, the heterostructures grown along polar direction are affected by the presence of internal electric field induced by the existence of intrinsic spontaneous and piezoelectric polarizations. The internal electric field is deleterious for optoelectronic devices as it causes a spatial separation of electron and hole wave functions in the quantum wells, which thereby decreases the emission efficiency. The growth of III-nitride heterostructures in nonpolar or semipolar directions is an alternative option to minimize the piezoelectric polarization. The heterostructures grown on these orientations are receiving a lot of focus due to their potential improvement on the efficiency of optoelectronic devices. In the present chapter, the growth of polar and nonpolar III-nitride heterostructures using molecular beam epitaxy (MBE) system and their characterizations are discussed. The transport properties of the III-nitride heterostructure-based Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Design and characterization of GaN∕InGaN solar cells
TL;DR: In this article, the III-V nitrides were used as a high-performance photovoltaic material with open-circuit voltages up to 2.4V and internal quantum efficiencies as high as 60%.
Journal ArticleDOI
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T. Metzger,R. Höpler,E. Born,Oliver Ambacher,Martin Stutzmann,R. Stömmer,M. Schuster,H. Göbel,Silke Christiansen,Martin Albrecht,Horst P. Strunk +10 more
TL;DR: In this article, the correlation lengths and dislocation densities of hexagonal GaN grown by metallorganic chemical vapour deposition on c-plane sapphire are determined by transmission electron microscopy and triple-axis X-ray diffractometry.
Journal ArticleDOI
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
Carl J. Neufeld,Nikholas G. Toledo,Samantha C. Cruz,Michael Iza,Steven P. DenBaars,Umesh K. Mishra +5 more
TL;DR: In this paper, the III-nitride photovoltaic cells with external quantum efficiency as high as 63% were reported on (0001) sapphire substrates with xIn=12%.
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Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment
Shibin Krishna Tc,Govind Gupta +1 more