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Journal ArticleDOI

Effect of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors

TL;DR: In this paper, the effect of charge partitioning in a silicon-on-insulator lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor on its nonlinearity model is investigated.
Abstract: In this article, the effect of charge partitioning in a silicon-on-insulator lateral double-diffused metal–oxide–semiconductor (LDMOS) transistor on its nonlinearity model is investigated. It is found that the prediction of the third-order intermodulation distortion (IM3) depends on the model equivalent circuit (EC) and appropriate charge assignments at various nodes therein. The investigation is carried out using a highly accurate static model of LDMOS along with a couple of different charge-partitioning schemes in order to single out their effects on the nonlinearity model behavior. We observe that charge partitioning in a more flexible EC framework yields an improved IM3 prediction when compared with the TCAD simulated results.
Citations
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01 Jan 2010
TL;DR: MOS Model 20 as mentioned in this paper is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs, which includes all specific highvoltage aspects into one model.
Abstract: MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements.

2 citations

References
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Book
01 Jan 1998
TL;DR: General techniques to suppress nonlinear behavior such as pre-distortion, linear and nonlinear feedback are explained in detail and illustrated with realistic examples to fill the gap between the theory of nonlinear systems and practical analog integrated circuits.
Abstract: From the Publisher: Distortion Analysis of Analog Integrated Circuits provides both qualitative and quantitative insight into the nonlinear behavior of analog integrated circuits at low and high frequencies. General techniques to suppress nonlinear behavior such as pre-distortion, linear and nonlinear feedback are explained in detail and illustrated with realistic examples. In this way the book fills the gap between the theory of nonlinear systems and practical analog integrated circuits. Distortion Analysis of Analog Integrated Circuits is essential reading for practicing analog and mixed-signal design engineers and researchers in the field. It is also suitable as a text for an advanced course on the subject.

670 citations


"Effect of Charge Partitioning on IM..." refers background in this paper

  • ...Among them, the particular intermodulation signals at frequencies |2ω2 −ω1| and |2ω1 −ω2| can come quite close to the fundamental carriers (at ω1 and ω2) and severely distort them, limiting the overall linearity of the amplifier’s output [2]....

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  • ...additionally, the displacement currents originating from all the drain-related capacitances (CD D, CDS , CDG , and CD B) and their derivatives directly determine the overall IM3 behavior [2]....

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Journal ArticleDOI
TL;DR: In this paper, the large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis, and the variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated.
Abstract: In this paper, large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis. The variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated. This nonlinear distortion model enabled the design of power amplifiers specially tailored to present a desired IMD versus drive-level pattern. For practical validation purposes, a MESFET case study and an illustrative application example are presented.

198 citations


"Effect of Charge Partitioning on IM..." refers background or methods in this paper

  • ...In a weakly nonlinear memoryless system, the small-signal IM3 content in Iout at frequency 2ω1 − ω2 is given by [7], [18] Ĩout,SS = 3A 3 4 gm3 + 25A 5 8 gm5 (12)...

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  • ..., a static transistor model), the accuracy of the IMD model relies on the prediction of higher order derivatives of transconductance [7], [18]....

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  • ...(in a compression regime), Ĩout becomes negative [7], [18]....

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Journal ArticleDOI
TL;DR: In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated and an analysis is performed to explain measured IMD characteristics in different classes of operation.
Abstract: In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.

139 citations


"Effect of Charge Partitioning on IM..." refers background or methods or result in this paper

  • ...Although the model reported in [7] could predict the double IMD sweet spots (i....

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  • ...(in a compression regime), Ĩout becomes negative [7], [18]....

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  • ...In a weakly nonlinear memoryless system, the small-signal IM3 content in Iout at frequency 2ω1 − ω2 is given by [7], [18] Ĩout,SS = 3A 3 4 gm3 + 25A 5 8 gm5 (12)...

    [...]

  • ..., a static transistor model), the accuracy of the IMD model relies on the prediction of higher order derivatives of transconductance [7], [18]....

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  • ...IM3 contribution from the turn-on region cancels the negative IM3 contribution (because of gm3 < 0), resulting in the first IMD sweet spot [7]....

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Proceedings ArticleDOI
13 Jun 1999
TL;DR: In this article, the development and behavior of a new model for Motorola's LDMOS transistor is described, which includes self-heating effects, produces accurate small-signal simulations as well as large-Signal, harmonic-balance simulations and also operates in the transient mode.
Abstract: The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.

101 citations

Journal ArticleDOI
TL;DR: In this paper, the design and optimization of an 80 V silicon RF LDMOSFET used in a power amplifier for base station applications is described, and extensive two-dimensional (2D) simulations are performed to characterize the DC and RF performance of the device.
Abstract: This paper describes the design and optimization of an 80 V silicon RF LDMOSFET used in a power amplifier for base station applications. The transistor was prototyped using the doping profiles extracted from an experimental device and extensive two-dimensional (2-D) simulations were performed to characterize the DC and RF performance of the device. A good match between the measured and simulated data is reported. A simple circuit model was developed which accurately predicts the DC and RF characteristics in circuit simulators. It is shown through 2-D simulations that the LDD region in the LDMOSFET can be modeled as a JFET. A methodology for the accurate extraction of model parameters for the circuit model is discussed. It is shown that the DC and RF performances of the circuit model closely match the measured data. Advanced mixed device and circuit simulations were used to obtain S-parameters of the device which provide new insights into device physics and also the basis for statistical process control studies.

76 citations


"Effect of Charge Partitioning on IM..." refers background in this paper

  • ...The second kind includes the subcircuit-based macromodels, such as the ones reported in [8]–[10]....

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