Effect of different methods of oxidation on SiSiO2 interface state properties

doi:10.1016/0378-5963(85)90231-4

Journal ArticleDOI

Effect of different methods of oxidation on SiSiO2 interface state properties

J. Majhi, +1 more

- 01 May 1985 -

Applications of Surface Science

- Vol. 22, pp 983-991

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TLDR

In this article, three different methods of oxidation - thermal, TCE, and anodic -were applied to n-type (111) silicon 10 ohm cm resistivity samples and their interface state properties were characterized by C-V and AC field effect techniques.

About:

This article is published in Applications of Surface Science.The article was published on 1985-05-01. It has received 0 citations till now. The article focuses on the topics: Electrical resistivity and conductivity.