Effect of different methods of oxidation on SiSiO2 interface state properties
TL;DR: In this article, three different methods of oxidation - thermal, TCE, and anodic -were applied to n-type (111) silicon 10 ohm cm resistivity samples and their interface state properties were characterized by C-V and AC field effect techniques.
About: This article is published in Applications of Surface Science.The article was published on 1985-05-01. It has received None citations till now. The article focuses on the topics: Electrical resistivity and conductivity.
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TL;DR: A brief review of the properties of interface traps and fixed charge, how these electrically active centers affect silicon device characteristics, and the largely empirical methods used to control the densities of these centers can be found in this paper.
Abstract: The two electrically active centers at the Si–SiO2 interface which can influence the performance and stability of MOSFET’s and bipolar transistors used in integrated circuits are interface traps and fixed charges. This paper is a brief review of the properties of interface traps and fixed charge, how these electrically active centers affect silicon device characteristics, and the largely empirical methods used to control the densities of these centers. These methods have been so successful that interface traps and fixed charge show no performance and stability problems in many types of integrated circuits.
37 citations
TL;DR: In this paper, the cross sections and energy levels of surface states in silicon around midgap have been investigated by a pulsed field effect technique, and two energy levels have been found, one acceptorlike (A), the other one donor-like (D).
33 citations
27 citations
TL;DR: In this article, the frequency dependence of ΔV Δ(C −2 ) of an MOS capacitor, which plays an important role in determining the semiconductor doping profile, is studied theoretically and experimentally.
Abstract: The frequency dependence of ΔV Δ(C −2 ) of an MOS capacitor, which plays an important role in determining the semiconductor doping profile, is studied theoretically and experimentally Useful expressions relating the measurable quantities to the doping profile are derived systematically It is shown how interface states and majority carriers influence the frequency dependence of ΔV Δ(C −2 ) and give rise to errors in profile determinations The techniques of measuring the various types of the frequency dependence of ΔV Δ(C −2 ) are also described
10 citations
TL;DR: In this paper, the field effect mobility on the free surface of PbTe films grown by hot wall epitaxy (HWE) technique ona KCl substrate was studied as a function of frequency in the range 40-200 kHz at different temperatures from 98-156 K.
Abstract: The field effect mobility on the free surface of PbTe films grown by hot wall epitaxy (HWE) technique ona KCl substrate was studied as a function of frequency in the range 40–200 kHz at different temperatures from 98–156 K. Using Garrett's theory of the frequency dependence of field-effect mobility, the relaxation times of surface states were found to vary from 1.84 to 0.96 μsec in the above temperature range. From Rupprecht's relation on temperature dependence of relaxation times, the energy level of surface states was found to be 0.02 eV below the conduction band with an effective capture cross section of the order 10−19 cm2.
7 citations