Effect of electron- and hole-dominant photocurrent on the millimetre wave properties of an indium phosphide IMPATT diode at a 94 GHz window under optical illumination
TL;DR: In this paper, the effect of photogenerated predominant electron or hole components of leakage current on the admittance and negative resistance properties of a 94 GHz p+nn+ indium phosphide IMPATT diode under optical illumination is presented.
Abstract: The effect of photogenerated predominant electron or hole components of the leakage current on the admittance and negative resistance properties of a 94 GHz p+nn+ indium phosphide IMPATT diode under optical illumination is presented in this paper. A computer modelling and simulation technique has been used to study the above effect. The results show that the photogenerated leakage current dominated by holes is more important than that dominated by electrons in modulating the millimetre wave properties of the device and shifting its oscillation frequency. The magnitudes of electron or hole ionization rates in the semiconductor have been found to be correlated with the above effect.
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01 Jan 2012
TL;DR: In this article, the effect of photo-irradiation on the avalanche response time of millimeter-wave and Terahertz (THz) Double-Drift Region (DDR) Silicon Impact Avalanche Transit Time (IMPATT) devices is investigated.
Abstract: Effect of photo-irradiation on the avalanche response time of Millimeter-wave (mm-wave) and Terahertz (THz) Double-Drift Region (DDR) Silicon Impact Avalanche Transit Time (IMPATT) devices is investigated in this paper. A model to study the photo-irradiation effect on the DC and high-frequency properties of the mm-wave and THz IMPATTs is developed by the authors based on which the simulation is carried out to calculate the avalanche response time of 94, 140, 220 GHz and 0.3 THz DDR Silicon IMPATTs under two different optical illumination configurations (Top Mount (TM) and Flip Chip (FC)). It is interesting to observe that the DC and high-frequency parameters of the device are more sensitive to electron dominated photo current (TM structure) compared to the hole dominated photo current (FC structure). Results show that the avalanche response time of the device decreases due to optical illumination on both TM and FC structures and percentage of decrease in avalanche response time in TM structure is higher as compared to that in FC structure. Larger decrement of avalanche response time due to optical illumination in TM structure causes larger deviation of phase shift between RF voltage and terminal current of the device from 180 0 which is the ideal phase difference between current and voltage for maximum RF power output; this is the main cause of greater reduction in RF power output in TM structure compared to FC structure due to optical illumination.
13 citations
TL;DR: In this paper, the effect of electron versus hole photocurrent on the optoelectric properties of structured Wurtzite-GaN (WzGaN) reach-through avalanche photodiodes (RAPDs) was investigated.
Abstract: The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and , respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and , respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the -layer instead of -layer of the device.
4 citations
TL;DR: In this paper, an attempt is made to study the shift of the avalanche transit time (ATT) phase delay and the modulation of the high frequency properties of single drift indium phosphide ATT diodes at 94 and 140 GHz window frequencies due to optical illumination.
Abstract: An attempt is made to study the shift of the avalanche transit time (ATT) phase delay and the modulation of the high frequency properties of single drift indium phosphide ATT diodes at 94 and 140 GHz window frequencies due to optical illumination. The study is based on a numerical simulation of the negative specific resistance profiles and the conductance-susceptance characteristics of the diode for different hole and electron current multiplication factors. The results indicate that the predominant hole photocurrent has a more pronounced effect in the 94 GHz diode as compared to the 140 GHz diode as regards the shift of avalanche phase delay, frequency chirping, narrowing of the avalanche zone, and decrease of the total negative resistance per unit area of the device.
3 citations
TL;DR: In this paper, the effect of punch through on the small signal properties of single drift n + np + silicon IMPATT diode near 94 GHz atmospheric propagation window has been studied and the computed results show that for a fixed bias current density, when the space charge effect is not prominent, the optimum negative conductance decreases, and the corresponding frequency for highest negativeconductance increases with the increase of punch-through determined by doping density and the thickness of the active layer.
Abstract: The effect of punch through on the small signal properties of single drift n + np + silicon IMPATT diode near 94 GHz atmospheric propagation window has been studied. The computed results show that for a fixed bias current density, when the space charge effect is not prominent, the optimum negative conductance decreases, and the corresponding frequency for highest negative conductance increases with the increase of punch through determined by doping density and the thickness of the active layer. The increase of punch through produces an upward shift in the operating frequency of the device. It is shown that an increase of punch through leads to a decrease in the conversion efficiency, and the negative conductance of the device.
2 citations
01 Jan 2015
TL;DR: In this article, the effect of light incident on the Si SDR IMPATT diode is investigated and the results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the SiO2 layer.
Abstract: Effect of light incident on the Si SDR IMPATT diode is investigated in this paper. The authors have used an IMPATT diode which is consists of p+, n+ (contact region), n-well region and p-sub region. Since the n-well region is used to be the drift region of the structure, the light is shined on the top of the layer through tiny hole created on the SiO2 layer. The results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the structure. The result of the electric field and mobility in those two conditions are also observed in this paper.
References
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TL;DR: Sze as mentioned in this paper has become a "standard" on the subject of microelectronic and optoelectronic devices and is often treated as the "Bible" on this subject.
Abstract: S M Sze 1981 Chichester: John Wiley xii + 868 pp price £28 The first edition of this book has become a 'standard', indeed it is often treated as the 'Bible' on the subject. The second edition is timely because the earlier volume has been overtaken by events in the fast–growing world of microelectronic and optoelectronic devices.
992 citations
TL;DR: In this paper, a general small-signal theory of the avalanche noise in IMPATT diodes is presented, which is applicable to structures of arbitrary doping profile and uses realistic (α
eq \beta in Si) ionization coefficients.
Abstract: A general small-signal theory of the avalanche noise in IMPATT diodes is presented. The theory is applicable to structures of arbitrary doping profile and uses realistic ( \alpha
eq \beta in Si) ionization coefficients. The theory accounts in a self-consistent manner for space-charge feedback effects in the avalanche and drift regions. Two single-diffused n-p diodes of identical doping profile, one of germanium and the other of silicon, are analyzed in detail. For description of the noise of the diodes as small-signal amplifiers the noise measure M is used. Values for M of 20 dB are obtained in germanium from effects in the depletion region only, i.e., when parasitic end region resistance is neglected. Inclusion of an assumed parasitic end resistance of one ohm for a diode of area 10-4cm2produces the following noise measure at an input power of 5×104W/cm2, and at optimum frequency: germanium 25 dB, silicon 31 dB. For comparison, a noise figure of 30 dB has been reported [1] for a germanium structure of the same doping profile as used in the calculations. Measurements of silicon diodes of the same doping profile are not available, but typically silicon diodes give 6-8 dB higher noise figures than germanium diodes of comparable doping profile.
233 citations
TL;DR: The use of optically controlled devices to perform a range of circuit functions is reviewed in this article, where the optical control of amplifier performance is discussed and future directions for research in this area are discussed.
Abstract: The use of optically controlled devices to perform a range of circuit functions is reviewed. The optical control of amplifier performance is discussed. The optical control of two- and three-terminal oscillators and optically pumped mixers is discussed. Among the active devices treated are Gunn and IMPATT oscillators; MESFET and HEMT amplifiers, oscillators, and mixtures; and diode mixers. Future directions for research in this area are discussed. >
217 citations
TL;DR: In this article, the authors present results of indirect optical injection locking of a free-running 38 GHz (Ka-band) IMPATT oscillator over the Iocking range of 2-132 MHz, depending on the injected power level (amplifier gain).
Abstract: Large aperture phased-array antennas operating at millimeter-wave frequencies are designed for space-based communications and imaging. Array elements are composed of active transmit-receive (T/R) modules that are phase and frequency synchronized to a reference signal at the central processing unit by a fiber-optic (FO) distribution network. The implementation of FO links, synchronizing the millimeter-wave Iocal oscillators (LO's), imposes a great challenge. This paper presents results of indirect optical injection locking of a free-running 38-GHz (Ka-band) IMPATT oscillator over the Iocking range of 2-132 MHz, depending on the injected power level (amplifier gain). In the experiment, the nonlinearity of both the laser diode and the IMPATT oscillator is exploited to achieve 12th subharmonic injection locking. The overall system FM noise degradation of the reference signal is 16 dB at 500-Hz offset. The FM noise degradation is dominated by the theoretical limit of 20 log N, where N is the frequency multiplication factor used in subharmonic injection locking. Methods by which optical injection locking may be extended into 60 and 90 GHz are demonstrated.
69 citations
TL;DR: In this article, the microwave oscillaton characteristics of GaAs IMPATT diodes under external optical illumination were studied and it was found that depending on the diode bias condition, the frequency of oscillation and the intensity of illumination, the IMPATT microwave output power can be either enhanced or reduced.
Abstract: A study was made of the microwave oscillaton characteristics of GaAs IMPATT diodes under external optical illumination. It was found that depending on the diode’s bias condition, the frequency of oscillation and the intensity of illumination, the IMPATT microwave output power can be either enhanced or reduced.
50 citations