Journal ArticleDOI
Effect of finite current multiplication factor in the avalanche zone on the high-frequency noise properties of read diodes
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TLDR
In this article, the high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, have been analyzed, and it is shown that the open-circuit noise voltage and the noise figure of the diode are reduced with the lowering of the current multiplication factors.Abstract:
The high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, has been analyzed. The analysis indicates that the open-circuit noise voltage and the noise figure of the diode are reduced with the lowering of the current multiplication factor. It is also found that the open-circuit noise voltage exhibits a finite peak at the avalanche frequency for finite but large values of M which, however, disappears at lower values of M(≤100).read more
Citations
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Journal ArticleDOI
Variation of high frequency negative resistance of silicon N+pp+ and GaAs p+nn+ IMPATT diodes with enhancement of reverse saturation current
TL;DR: In this paper, the effect of electron and hole reverse saturation currents on the negative resistance profiles, the admittance characteristics, and the device quality factor (Q) of silicon n+pp+ and GaAs p+nn+ IMPATTs operating in the Ku-band frequencies was investigated.
Journal ArticleDOI
A Study on the Effect of Electron and Hole Saturation Currents on the Negative Resistance Profiles, Negative Conductance and the Frequency of Operation of Millimeter Wave (W-Band) Double-Drift Silicon IMPATT Diodes
N Mazumder,S. K. Roy +1 more
TL;DR: In this article, the effect of reverse saturation current on the high frequency and low frequency of a silicon double-drift region (DDR) operating in the mm-wave range (W-band) was investigated.
Journal ArticleDOI
Microwave properties of a proposed read-like device with variable current multiplication in the avalanche zone and an additional transverse field in the drift zone
S.K. Roy,P.K. Goswami,B.B. Pal +2 more
TL;DR: In this article, the high-frequency properties of a Read-like IMPATT device, which is arranged to have a variable current multiplication in the avalanche zone by means of controlled injection of minority carriers into the reverse biased junction, and also an additional transverse field in the intrinsic drift region, is presented.
Journal ArticleDOI
Computer studies of the effect of electron and hole current multiplication factors on the d.c. and microwave properties of symmetrical Si DDR IMPATT devices
M. Sridharan,S.K. Roy +1 more
TL;DR: In this paper, the effect of carrier current multiplication on the d.c. field and current profiles and small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode was analyzed.
References
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Journal ArticleDOI
Multiplication noise in uniform avalanche diodes
TL;DR: In this article, the spectral density of the noise generated in a uniformly multiplying p-n junction can be derived for any distribution of injected carriers, and the analysis is limited to the white noise spectrum only, and to diodes having large potential drops across the multiplying region of the depletion layer.
Journal ArticleDOI
A small-signal theory of avalanche noise in IMPATT diodes
H.K. Gummel,J.L. Blue +1 more
TL;DR: In this paper, a general small-signal theory of the avalanche noise in IMPATT diodes is presented, which is applicable to structures of arbitrary doping profile and uses realistic (α
eq \beta in Si) ionization coefficients.
Journal ArticleDOI
Noise theory for the read type avalanche diode
TL;DR: In this paper, an analysis for the noise current spectrum of an avalanche diode under assumed conditions of ideal uniform avalanche behavior in a zone which is thin compared with the total high-field depletion zone is presented.
Journal ArticleDOI
Large-signal noise, frequency conversion, and parametric instabilities in IMPATT diode networks
TL;DR: In this article, a theoretical treatment of the nonlinear properties of the IMPATT or Read avalanche diode, a negative-resistance semiconductor device that is now coming into wide-spread use for microwave oscillators and power amplifiers, is presented.
Journal ArticleDOI
Effects of time dependence of multiplication process on avalanche noise
TL;DR: Theoretical and experimental studies of noise generated due to the randomness of the multiplication process in the avalanche region of a uniform diode are presented in this paper, where it is shown that even at frequencies well below transit-time frequency, the importance of the factor resulting from consideration of the time dependence of multiplication process cannot be ignored.