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Journal ArticleDOI

Effect of irradiation by ion on quasicrystalline thin films

13 Dec 2002-Vacuum (Pergamon)-Vol. 68, Iss: 4, pp 349-355

Abstract: Effect of 100 MeV 58 Ni +8 ion irradiation on the electrical transport behaviour of Al–Cu–Fe quasicrystalline thin films have been investigated by in situ and ex situ resistivity measurements. The quasicrystalline thin films grown by indirect heating, electron-beam and flash evaporation methods have been used for this purpose. The fluence of 100 MeV 58 Ni +8 beam is varied from 1×10 9 to 1×10 13 particles / cm 2 . A small oscillatory variation of resistivity up to a critical fluence of 5×10 12 particles / cm 2 is observed in all the samples. A rapid decrease in resistivity is observed at a fluence of 1×10 13 particles / cm 2 for all the quasicrystalline thin films. These thin films also show negative temperature coefficient of resistivity similar to that of unirradiated quasicrystalline thin films. The results of simulation for resistivity versus temperature (unirradiated and irradiated at fluence 1×10 13 particles / cm 2 ) support the observed behaviour of resistivity with temperature.
Topics: Electrical resistivity and conductivity (54%), Fluence (52%), Thin film (52%), Temperature coefficient (51%)
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Journal ArticleDOI
Ratnamala Chatterjee1, Aloke Kanjilal1Institutions (1)
Abstract: The effect of swift-heavy-ion irradiation on a very stable and well-studied Al 62 Cu 25.5 Fe 12.5 icosahedral quasicrystalline system is discussed here. The experiments are performed in the pure electronic excitation regime, where various ranges of energy (1.2 to ∼2.5 keV/A) are systematically deposited in to the system, causing electronic excitations in them. The choice of ions was generally dependent on calculations based on Monte-Carlo simulations and some existing literature studies on metals/metallic alloys. Samples were irradiated at fluences of 10 11 to a few 10 13 ions/cm 2 , and a homogeneous irradiation was ensured. The effect of these electronic excitations on the electronic structure of the quasicrystals is analyzed by doing in situ resistivity vs. fluence and ex situ resistivity vs. temperature measurements, made on the irradiated pieces.

4 citations


Journal ArticleDOI
Ratnamala Chatterjee1Institutions (1)
Abstract: The present level of understanding of the effects of irradiation of quasicrystalline targets with swift heavy ions has been reviewed here. The results of systematic deposition of large amount of energy densities (12 keV/nm < (dE/dx)e < 40 keV/nm) in Al-Cu-Fe based system are discussed in terms of resistivity measurements (in-situ measurements of resistivity changes with increasing flux (ions/cm2) and ex-situ resistivity vs temperature measurements before and after irradiation) & standard and high-resolution X-ray diffraction measurements made before and after irradiation. The studies are aimed at understanding the changes that may occur in these alloys as a result of the relaxation of such highly excited states of matter. Also, we attempt to learn whether such changes are typical to the long-range quasicrystallinity of the system or not.

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01 Jan 2003

319 citations


"Effect of irradiation by ion on qua..." refers background or methods in this paper

  • ...The electronic stopping power and nuclear stopping power of the beam of 100 MeV(58)Ni in Al63Cu24:5Fe12:5 were calculated (using SRIM-98 Monte Carlo Code [12]) as 13:3 keV=nm and 24:6 eV=nm; respectively....

    [...]

  • ...In this work we have investigated the effect of SHI ð100 MeV NiÞ on good quality quasicrystalline thin films [10,11] of Al-Cu-Fe of different thickness ð69 n m p thickness p200 nmÞ: Stopping power and range of ion (SRIM-98 Monte Carlo Code [12]) calculations show that in the range of thickness of our films the values of Se and Sn are nearly constant and Se is much greater than Sn ðSe b SnÞ: Defect production/defect annihilation (DP/DA) by SHI beam in metallic system is possible above an electronic stopping power threshold [13]....

    [...]

  • ...11, based on SRIM-98 Monte-Carlo [12] calculations....

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D. A. Lilienfeld1, Michael Nastasi1, H. H. Johnson1, D. G. Ast1  +1 moreInstitutions (1)
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A. Dunlop1, D. Lesueur1, J. Morillo1, J. Dural  +2 moreInstitutions (1)
Abstract: The low-temperature damage induced by high-energy heavy ions in metallic targets has been followed by in-situ electrical-resistivity measurements. In Cu3Au alloys, the observed damage production can be accounted for by elastic-collision processes, whereas in Ni3Fe and iron, inelastic collisions must be put forward above an electronic stopping power threshold. In the latter case, collective effects in the wake of the incident ion could explain both (1) the increased damage efficiency and (2) the inhomogeneous damage distribution that leads to a very small saturation resistivity increase.

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