Journal ArticleDOI
Effect of Magnetic Field on the Threshold Current in InAs and InSb Laser Diodes
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TLDR
In this paper, the authors show that the lowering in a magnetic field of the electron quasi-Fermi level with respect to the bottom of the conduction band in a highly degenerate semiconductor contributes to two effects which affect the threshold current in InAs and InSb laser diodes.Abstract:
The lowering in a magnetic field of the electron quasi-Fermi level with respect to the bottom of the conduction band in a highly degenerate semiconductor is shown to contribute to two effects which affect the threshold current in InAs and InSb laser diodes. One of the effects is the narrowing of the linewidth of spontaneous emission while the other one is the reduction of the width of the active region in which radiative recombination takes place. Unlike the reduction of the width of the active region only in a transverse magnetic field due to the change of the carrier diffusion length, these effects would more or less be independent of the orientation of the magnetic field.read more
References
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Journal ArticleDOI
Effect of Band Tails on Stimulated Emission of Light in Semiconductors
TL;DR: The dependence of the stimulated emission of radiation in semiconductors on temperature and impurity concentration has been calculated using a Kane model with a Gaussian band tail for the density of states as discussed by the authors.
Journal ArticleDOI
Electron Interaction Effects on Recombination Spectra
TL;DR: In this article, the authors suggest a possible origin of low energy tails observed in radiative recombination when at least one of the participating bands is degenerate and make an order-of-magnitude calculation which shows that the effect can have the same origin as similar effects in the soft X-ray emission spectra of metals.
Journal ArticleDOI
Recombination Emission in InSb
Aram Mooradian,H. Y. Fan +1 more
TL;DR: In this article, the emission of phonon-assisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling.
Journal ArticleDOI
Threshold relations and diffraction loss for injection lasers
TL;DR: A new type of diffraction loss for a thin light-emitting layer surrounded by light-absorbing material is calculated.
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