# Effect of magnetic quantization on the gate capacitance of mos structures of ternary semiconductors

TL;DR: In this article, the gate capacitance of MOS structures of ternary semiconductors having n-channel inversion layers under magnetic quantization without any approximations of weak or strong electric field limits is derived.

Abstract: An attempt is made to formulate the gate capacitance of MOS structures of ternary semiconductors having n-channel inversion layers under magnetic quantization without any approximations of weak or strong electric field limits. It is found, taking n-channel Hg1-xCdxTe as an example, that the gate capacitance exhibits spiky oscillations with the reciprocal magnetic field. It is further observed that the sharpness and the amplitudes of spikes increase with increasing magnetic field. Besides, the corresponding results for n-channel inversion layers on parabolic semiconductors are also obtained from the expressions derived.

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01 Jan 2020TL;DR: In this article, the authors derived the quantum capacitance in quantum wire field effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane's matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation.

Abstract: This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.

4 citations

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01 Jan 2016

TL;DR: This chapter contains twenty eight applications of the DRs as presented for various HD materials and their quantized counterparts as investigated in this book.

Abstract: This chapter contains twenty eight applications of the DRs as presented for various HD materials and their quantized counterparts as investigated in this book. The Sect. 20.3 contains 1 multi dimensional open research problem, which form the integral part of this chapter.

1 citations

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01 Jan 2021TL;DR: In this paper, the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III-V, II-VI, IV-VI and strained compounds, respectively, was investigated.

Abstract: We investigate the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III–V, II–VI, IV–VI and strained compounds, respectively. It has been found taking ED QFs and ALs of specific materials of the important 2D electronic compounds as examples that the elastic constants (C1 and C2) change with nano-size of the said QFs and the two-dimensional carrier statistics per unit area in different oscillatory ways. The influence of electric field for both the limits in inversion layers of non-parabolic materials has also been studied. Besides, C1 and C2 are in nice agreement with our suggestive relationships for determining them experimentally.

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01 Jan 2015TL;DR: In this article, a simplified analysis of the EP in superlattices of HD non-parabolic semiconductors under magnetic quantization is presented, which is a big topic of research by its own right.

Abstract: In this Appendix, we have investigated the EP under magnetic quantization in III-V, II-VI, IV-VI, HgTe/CdTe and strained layer HD SLs with graded interfaces. Besides, we have also studied the EP in III-V, II-VI, IV-VI, HgTe/CdTe and strained layer effective mass HD SLs in the presence of quantizing magnetic field respectively. Thus, we present a very simplified analysis of the EP in superlattices of HD non-parabolic semiconductors under magnetic quantization, which is a big topic of research by its own right. This Appendix contains single deep open research problem.

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01 Jan 2015TL;DR: In this paper, the ER in accumulation and inversion layers of nonlinear optical, III-V, II-VI, IV-VI and stressed semiconductors, Ge and GaSb in the weak electric field limit was investigated.

Abstract: This chapter investigates the ER in accumulation and inversion layers of non-linear optical, III–V, II–VI, IV–VI, stressed semiconductors, Ge and GaSb in the weak electric field limit by formulating the new expression of surface electron statistics in each case. It has been observed that the ER increases with increasing surface electron field and decreasing alloy composition. In this simplified analysis, we have investigated the ER in the electric quantum limit and the Sect. 3.4 contains 12 open research problems, which is the integral part of this chapter.

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TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.

Abstract: The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

5,638 citations

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TL;DR: In this paper, the authors measured the energy gap at the fundamental absorption edge of HgTe over the composition range 0.23 to 0.61 and at temperatures from 300° to 10°K.

Abstract: The absorption coefficient at the fundamental absorption edge has been measured in Hg1−xCdxTe over the composition range 0.23≤x≤0.61 and at temperatures from 300° to 10°K. The energy gap, estimated from the position of the absorption edge, increases continuously with increasing CdTe content but was not linear between the values for HgTe and CdTe. The energy gap of the alloys varied approximately linearly with temperature for T>100°K, going from a positive temperature coefficient for x 0.5. The temperature coefficient of the gap, dEg/dT, was linear with composition and extrapolated to +5.6×10−4 eV/°K for HgTe. The expression Eg(x, T)=−0.303+1.73x+5.6×10−4(1−2x)T+0.25x4 was obtained from the data and can be used to obtain the energy gap as a function of x and T over a large range of these variables.

121 citations

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TL;DR: In this paper, the luminescent efficiency of a ternary semiconductor is calculated for the case of radiative transitions between free electrons and holes, where the total electron concentration is divided between the direct and indirect conduction band minima.

Abstract: The luminescent efficiency is calculated for a ternary semiconductor, wherein the total electron concentration is divided between the direct and indirect conduction‐band minima. In each valley, the rate equations are determined by radiative, nonradiative, and intervalley transfer times. Although such intervalley transfer times are unimportant at 300°K for efficient material, they are found to be important at 300°K when the internal radiative efficiencies are less than 1%. Furthermore, since phonon cooperation is mandatory for transitions between the direct and indirect valleys, the intervalley transfer times become quite long (>10−9 sec in GaAsP) at lattice temperatures below 77°K. In order to compare the analytical expressions of luminescent efficiency with experiment, it was necessary to derive expressions for the external quantum efficiency of a p‐n junction in a direct band‐gap material. The external electroluminescent efficiency is derived in terms of the junction depth, diffusion length, and absorption coefficient. For the particular case of radiative transitions between free electrons and holes, the predicted ternary electroluminescent efficiencies are in agreement with published experimental results on GaAsP. Furthermore, application of the efficiency expressions to the case of deep impurity emission associated with Si in GaAlAs leads to good agreement with published experimental data on this system. Finally, it is shown that the nonradiative transitions associated with the alloying process are unimportant for most direct band‐gap ternaries, as well as inefficent indirect band‐gap compositions.

36 citations

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TL;DR: In this paper, the behavior of charge carriers in the inversion layer under surfacequantized conditions was observed by small-signal magnetoadmittance and manetoconductance experiments on 100 Si metal-oxide-semiconductor field effect transistor (MOSFET) structures.

Abstract: The behavior of charge carriers in the inversion layer under surface-quantized conditions was observed by small-signal magnetoadmittance ($Y$) and manetoconductance ($G$) experiments on $p$-type (100) Si metal-oxide-semiconductor field-effect-transistor (MOSFET) structures. The two-dimensional character of the surface-quantized electron gas was further substantiated. The density of states was studied directly by the surface-capacitance technique. The dependence of $Y$ on a number of variables was investigated, including (1) $T\ensuremath{\le}4.22$ \ifmmode^\circ\else\textdegree\fi{}K, (2) magnetic field ($B\ensuremath{\le}12$ T), (3) electric field excitation, (4) frequency, and (5) substrate doping (${10}^{19}\ensuremath{\le}p\ensuremath{\le}2\ifmmode\times\else\texttimes\fi{}\frac{{10}^{20}}{{m}^{3}}$). Comparative studies of small-signal surface conductance and admittance were useful in establishing the advantages and limitations of each technique. It was observed that $Y$ becomes frequency independent at frequencies below 500 Hz. Both the line shape and fine structure observed at $Y$ at threshold are attributed to a bound-state band overlapping the conduction band resulting from surface-potential fluctuation. Circuit modeling of the MOSFET structures was found to be important in the interpretation of the admittance.

35 citations

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TL;DR: In this article, the ground state of electrons in a semiconductor inversion layer is determined by varying the total energy and electrostatic energy functionals which represent an approximate selfconsistent solution of Schrodinger's and Poisson's equation.

Abstract: By varying the total energy and electrostatic energy functionals which represent an approximate self-consistent solution of Schrodinger's and Poisson's equation, the ground state of electrons is determined in a semiconductor inversion layer. It was assumed that all the electrons in the semiconductor inversion layer are in the ground state. The low frequency capacitance metal-insulator-semiconductor (MIS) capacitors is calculated by the proposed theory and the results are compared with classically calculated capacitance. Numerical results are given for a silicon (111) p -type bulk at 77°K.

10 citations