Journal ArticleDOI
Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
Basanta Roul,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,Neeraj Sinha,A. T. Kalghatgi,S. B. Krupanidhi +6 more
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TLDR
In this article, the effect of N/Ga flux ratio on structural, morphological, and optical properties of GaN films on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE) was studied.Abstract:
GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films.read more
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Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
TL;DR: In this article, the authors have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics, where the barrier height and the ideally factor were found to be temperature dependent.
Journal ArticleDOI
Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy
Rohit Pant,Deependra Kumar Singh,Basanta Roul,Basanta Roul,Arun Malla Chowdhury,Greeshma Chandan,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: In this article, a-plane GaN thin films are grown on r-plane sapphire using three different growth approaches by plasma-assisted molecular beam epitaxy (PAMBE) and in situ reflection high-energy electron diffraction (RHEED) analysis is performed during and after the growth to monitor the growth mode.
Journal ArticleDOI
Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters
TL;DR: In this article, the growth of pure gallium nitride (GaN) nanostructures on different silicon (Si) substrates by thermal vapor deposition via the direct reaction of gallium with volatile ammonia solution is reported.
Journal ArticleDOI
Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE
Neeraj Sinha,Neeraj Sinha,Basanta Roul,Basanta Roul,Shruti Mukundan,Greeshma Chandan,Lokesh Mohan,V. M. Jali,S. B. Krupanidhi +8 more
TL;DR: In this paper, a single-phase InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy and the composition of indium incorporation was found to be 23%.
Journal ArticleDOI
Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height
Basanta Roul,Basanta Roul,Deependra Kumar Singh,Rohit Pant,Arun Malla Chowdhury,Arun Malla Chowdhury,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: In this article, the authors present a detailed report on the modulation in the electrical properties of VO2/Si heterostructures by application of an external electrical field across VO2 thin films.
References
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Journal ArticleDOI
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
B. Heying,X. H. Wu,Stacia Keller,Youli Li,D. Kapolnek,Bernd Keller,Steven P. DenBaars,James S. Speck +7 more
TL;DR: In this article, the authors demonstrate that the anomalously low (002) x-ray rocking curve widths for epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading dislocation geometry.
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High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
TL;DR: In this article, the authors report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n−GaN−Al0.86N heterojunction.
Journal ArticleDOI
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
John F. Muth,Jae-Hoon Lee,I. K. Shmagin,R. M. Kolbas,H. C. Casey,Bernd Keller,Umesh K. Mishra,Steven P. DenBaars +7 more
TL;DR: In this paper, the absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature.
Journal ArticleDOI
High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
TL;DR: In this paper, high-power blue and violet light-emitting diodes (LEDs) based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.
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Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T. Metzger,R. Höpler,E. Born,Oliver Ambacher,Martin Stutzmann,R. Stömmer,M. Schuster,H. Göbel,Silke Christiansen,Martin Albrecht,Horst P. Strunk +10 more
TL;DR: In this article, the correlation lengths and dislocation densities of hexagonal GaN grown by metallorganic chemical vapour deposition on c-plane sapphire are determined by transmission electron microscopy and triple-axis X-ray diffractometry.