Journal ArticleDOI
Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
Basanta Roul,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,Neeraj Sinha,A. T. Kalghatgi,S. B. Krupanidhi +6 more
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TLDR
In this article, the effect of N/Ga flux ratio on structural, morphological, and optical properties of GaN films on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE) was studied.Abstract:
GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films.read more
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Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
TL;DR: In this article, the authors have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics, where the barrier height and the ideally factor were found to be temperature dependent.
Journal ArticleDOI
Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy
Rohit Pant,Deependra Kumar Singh,Basanta Roul,Basanta Roul,Arun Malla Chowdhury,Greeshma Chandan,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: In this article, a-plane GaN thin films are grown on r-plane sapphire using three different growth approaches by plasma-assisted molecular beam epitaxy (PAMBE) and in situ reflection high-energy electron diffraction (RHEED) analysis is performed during and after the growth to monitor the growth mode.
Journal ArticleDOI
Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters
TL;DR: In this article, the growth of pure gallium nitride (GaN) nanostructures on different silicon (Si) substrates by thermal vapor deposition via the direct reaction of gallium with volatile ammonia solution is reported.
Journal ArticleDOI
Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE
Neeraj Sinha,Neeraj Sinha,Basanta Roul,Basanta Roul,Shruti Mukundan,Greeshma Chandan,Lokesh Mohan,V. M. Jali,S. B. Krupanidhi +8 more
TL;DR: In this paper, a single-phase InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy and the composition of indium incorporation was found to be 23%.
Journal ArticleDOI
Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height
Basanta Roul,Basanta Roul,Deependra Kumar Singh,Rohit Pant,Arun Malla Chowdhury,Arun Malla Chowdhury,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: In this article, the authors present a detailed report on the modulation in the electrical properties of VO2/Si heterostructures by application of an external electrical field across VO2 thin films.
References
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Journal ArticleDOI
First order Raman scattering in GaN
TL;DR: In this article, experimental evidence of A 1 and E 1 longitudinal optical modes in Raman spectra of GaN is reported for the first time and the static dielectric constant and the effective charge are also calculated.
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Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
TL;DR: In this article, the indium incorporation in hexagonal InGaN grown by plasma assisted molecular-beam epitaxy is studied by means of reflection high-energy electron diffraction (RHEED) intensity oscillations.
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Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy
Adrian Hierro,Aaron R. Arehart,B. Heying,M. Hansen,Umesh Mishra,Steven P. DenBaars,James S. Speck,Steven A. Ringel +7 more
TL;DR: In this article, the effect of growth on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated, and it was shown that the growth regime directly impacts all morphology, bulk transport, and trap states in n-GAN.
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Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes
TL;DR: In this paper, the authors measured the I-V characteristics over the temperature range of 80-360 K by the steps of 20 K and found that the slope of the linear portion of the forward bias I-v plot and nkT=E0 of the device remained almost unchanged as independent of temperature with an average of 25.71±0.90 V−1 and 41.44±1.38 V−2.
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Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy
E. J. Miller,Daniel M. Schaadt,Edward T. Yu,X. L. Sun,Leonard J. Brillson,P. Waltereit,James S. Speck +6 more
TL;DR: In this paper, a mechanism for local suppression of current flow along conduction paths in n-type GaN grown by molecular-beam epitaxy was analyzed using conductive atomic force microscopy, scanning Auger spectroscopy, and macroscopic currentvoltage measurements.