Journal ArticleDOI
Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy
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The surface morphology of GaN epitaxial films grown by plasma-assisted molecular-beam epitaxy has been investigated in this paper, where the surface morphology was sensitive to the N to Ga flux ratio (N/Ga) when grown at a high temperature.Abstract:
The surface morphology of GaN epitaxial films grown by plasma-assisted molecular-beam epitaxy has been investigated. We found that the surface morphology was sensitive to the N to Ga flux ratio (N/Ga) when grown at a high temperature (i.e., 788 °C). At that temperature, we did not observe large sized Ga droplets on the surface even at Ga-rich conditions. Furthermore, we found a transition from two-dimensional (2D) to three-dimensional (3D) growth in the intermediate Ga-stable regime. The slope of the growth rate was different: Slope=(0.39±0.06) was observed in the 2D-growth mode and (0.14±0.03) in the 3D-growth mode. In the high N/Ga ratio, the total dislocation concentration was reduced, and the mixed threading dislocation concentration had a minimum value at N/Ga=22.5. By comparing with the Hall carrier concentration results, we found that the mixed threading dislocations influence the number of electronic carriers.read more
Citations
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Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
Muhammad Junaid,Ching-Lien Hsiao,Justinas Palisaitis,Jens Jensen,Per Persson,Lars Hultman,Jens Birch +6 more
TL;DR: In this paper, electronic-grade GaN epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere.
Journal ArticleDOI
Atomic assembly during GaN film growth : Molecular dynamics simulations
TL;DR: In this article, the authors used a recently developed Ga-N Tersoff type bond order interatomic potential to investigate the growth mechanisms of wurtzite GaN films from thermalized atomic gallium and nitrogen fluxes.
Journal ArticleDOI
Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire
TL;DR: In this article, the authors demonstrate spontaneous growth of a high density of self-organized, oriented, and epitaxial GaN low-dimensional nanostructures on Al2O3(0001) by sheer kinetic control without involving lithography, catalysts, buffer layers, or any surface pretreatment and consequently reducing process steps.
Journal ArticleDOI
Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE
Shibin Krishna,Neha Aggarwal,Monu Mishra,K.K. Maurya,Sandeep Singh,Nita Dilawar,S. Nagarajan,Govind Gupta +7 more
TL;DR: The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates.
Journal ArticleDOI
Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy
Aditya Prabaswara,Jens Birch,Muhammad Junaid,Elena Alexandra Serban,Lars Hultman,Ching-Lien Hsiao +5 more
TL;DR: Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN as discussed by the authors.
References
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Journal ArticleDOI
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial gan grown by metalorganic chemical-vapor deposition
TL;DR: In this article, the relationship between microstructure and luminescence efficiency for heteroepitaxial films of GaN grown on c-axis sapphire substrates by metalorganic chemical-vapor deposition was discussed.
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Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
TL;DR: The surface morphologies of GaN grown by plasma-assisted molecular beam epitaxy under various growth conditions have been investigated in this article, where three growth regimes (one N stable and two Ga stable) are identified on a surface structure diagram (Ga/N ratio versus substrate temperature).
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Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
TL;DR: In this article, the structure, morphology, and optical properties of homoepitaxial GaN layers grown by molecular beam epitaxy on metalorganic chemical vapor deposition (MOCVD)-grown GaN “template” layers were investigated as a function of the group III/group V flux ratio during growth.
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Dislocation mediated surface morphology of GaN
TL;DR: In this article, the surface morphology of GaN films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) was studied using atomic force microscopy (AFM).
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Spatial distribution of the luminescence in GaN thin films
TL;DR: The spatial dependence of the luminescence intensities at the band edge (364 nm) and at the defect-band (centered at 560 nm) regions for epitaxial GaN films have been studied using cathodoluminescence microscopy at room temperature.