Effect of Oxide Layers on the Diffusion of Phosphorus into Silicon
TL;DR: In this paper, the diffusion of phosphorus from the vapor phase into single crystal silicon has been studied in terms of a two-layer diffusion model, leading to the determination of a diffusion constant for phosphorus in the oxide.
Abstract: The diffusion of phosphorus from the vapor phase into single crystal silicon has been studied. The experimental data are analyzed in terms of a two‐layer diffusion model, leading to the determination of a diffusion constant for phosphorus in the oxide. The resulting diffusion constant at 1150°C is found to be 2.1×10−15 cm/sec2 with an activation energy of 1.4 ev.
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TL;DR: In this paper, the diffusion of gallium into silicon through an oxide layer was studied by a p-n junction technique, and the two-boundary diffusion model was estimated to be 5.3 × 10−11 cm 2 sec (√D = 4·4 μ √hr ) at 1100°C and 1.7 × 10 −9 cm 2sec (∆D) = 25.5 μ ∆hr ) in 1250°C.
45 citations
TL;DR: In this paper, a tunnel oxide layer was used to improve the performance of a high-efficiency silicon solar cell based on the full back surface field (BSF) in terms of open-circuit voltage (V oc ).
45 citations
NEC1
TL;DR: In this paper, the diffusion coefficient of boron and phosphorus in thermally grown SiO2 from a doped polycrystalline Si source has been found to be dependent on drive-in ambients and to be especially fast in an H2 ambient.
Abstract: The diffusion of boron and phosphorus into thermally grown SiO2 from a doped polycrystalline Si source has been found to be dependent on drive-in ambients and to be especially fast in an H2 ambient. Diffusion coefficients have been calculated by the two boundary diffusion model. It was found that the diffusion coefficient of boron in SiO2 is about two orders of magnitude larger than that of phosphorus. This fact is very important for Si gate processes. For P-channel Si gate transistors, boron diffused in the gate SiO2 film from the doped polycrystalline Si gate electrode causes new types of instabilities in transistor characteristics.
40 citations
TL;DR: In this paper, the diffusion of ion-implanted Ga in SiO2 by means of Rutherford backscattering spectrometry was studied and the doping of Si from a Ga•implanted siO2 layer was also investigated.
Abstract: We studied the diffusion of ion‐implanted Ga in SiO2 by means of Rutherford backscattering spectrometry. We also investigated the doping of Si from a Ga‐implanted SiO2 layer. It turned out that Ga occurs in three different chemical states in SiO2. In one chemical form it is virtually immobile, which we relate to Ga‐on‐Si sites in the network. A second type of Ga exhibits a very high diffusion coefficient. We have found that the formation of this type of Ga occurs by the same mechanism under almost all of the experimental circumstances. An interstitial GaOH molecule is proposed to be the diffusing species in this case. Finally, there is a third form in which Ga diffuses independently of the other diffusing species. The higher activation energy of this diffusion process suggests the diffusion of gallium in some substitutional form.
30 citations
TL;DR: In this paper, the authors model the insulator/semiconductor interface formation during chemical vapor deposition (CVD) of SiO 2 and SiON onto InP and GaAs; it deals primarily with the chemical nature of the interface as a result of the CVD and not with the electronic properties of the interfaces.
22 citations
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31 Dec 1959
TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Abstract: This classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems.
21,807 citations
TL;DR: In this paper, correction factors are evaluated for the measurement of sheet resistirities on two-dimensional rectangular and circular samples with the four-point probe, and the factors are also useful in obtaining body resistivities on thin samples.
Abstract: Correction factors are evaluated for the measurement of sheet resistirities on two-dimensional rectangular and circular samples with the four-point probe. Diffused surface layers can be treated as two-dimensional structures, but the factors are also useful in obtaining body resistivities on thin samples.
1,462 citations
TL;DR: In this article, the diffusion of the Group III (B, Al, Ga, In, and Tl) and Group V (P, As, Sb, and Bi) elements in silicon has been measured in the temperature range 1050-1350°C.
Abstract: The diffusion of the Group III (B, Al, Ga, In, and Tl) and Group V (P, As, Sb, and Bi) elements in silicon has been measured in the temperature range 1050–1350°C. A method based on change in conductivity through the penetration layer has been used for B and P. The p‐n junction method has been used for the other elements. Aside from B and P, which have similar diffusional properties, the acceptor elements diffuse more rapidly than the donor elements. Diffusion coefficients are given by DB, P=10.5 exp − (85 000/RT), DA1=8.0 exp − (80 000/RT), DGa=3.6 exp − (81 000/RT), DIn, T1=16.5 exp − (90 000/RT), DAs=0.32 ×exp − (82 000/RT), DSb=5.6 exp − (91 000/RT), DBi=1030 exp − (107 000/RT) with an average estimated error of about ±40%. This corresponds to an error in the activation energies of about ±5 kcal. Sources of error including the effects of impurities in the oxides are discussed. D0 values in most cases conform to the predictions of Zener for substitutional diffusion.
294 citations
TL;DR: In this paper, the stability of silicon surfaces when they are provided with a chemically bound solid-solid interface was investigated and the application of the process to devices and resulting device characteristics were discussed.
Abstract: A study has been carried out of the stability of silicon surfaces when they are provided with a chemically bound solid-solid interface. Stable surfaces have been obtained with the system silicon-silicon dioxide when the oxide is thermally grown. This latter system has been studied in some detail. In this paper the following phases of our investigation are presented: (i) some aspects of the thermal oxidation process and properties of the oxide; (ii) the electronic properties of the resulting silicon-silicon dioxide interface; (iii) the application of the process to devices and resulting device characteristics.
215 citations
TL;DR: In this article, an apparatus for the vapor-solid diffusion of donors and acceptors into silicon at atmospheric pressure is described, which consists essentially of a fused silica tube extending through one or more controlled temperature zones.
Abstract: An apparatus is described for the vapor‐solid diffusion of donors and acceptors into silicon at atmospheric pressure. It consists essentially of a fused silica tube extending through one or more controlled temperature zones. A gas such as nitrogen carries the vapors from the heated impurity element or one of its compounds past the heated silicon.At temperatures above about 1000 °C, gases such as helium or nitrogen are shown to cause serious pitting or erosion of the silicon surfaces. A thin vitreous silicon dioxide envelope enclosing the silicon during the high temperature heating operation is shown to provide complete protection of the underlying surface against damage. Methods of obtaining surface passivation are described.In addition to surface protection, a silicon dioxide surface layer also is shown to provide a selective mask against the diffusion into silicon of some donors and acceptors at elevated temperatures. Data are presented showing the masking effectiveness of the silicon dioxide layer against the diffusion of several donors and acceptors into silicon.The application of the masking technique to produce precise surface patterns of both n‐ and p‐type is described. An example of its feasibility in device considerations is illustrated by the construction of a transistor by double diffusion. This transistor is unique in that both the emitter and base contacts are made at the surface in adjacent areas.Finally a new predeposition technique is described for controlling the impurity levels in diffused layers over wide ranges. Data are presented to illustrate this technique.
150 citations