Journal ArticleDOI
Effect of Sputtered-Al 2 O 3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs
Reads0
Chats0
TLDR
In this article, the dependence of threshold voltage on oxide thickness for GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputterdeposited Al2O3 as gate dielectric is studied in detail.Abstract:
Dependence of threshold voltage ( $V_{\mathrm{ Th}}$ ) on oxide thickness ( $t_{\mathrm{ ox}}$ ) for GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter-deposited Al2O3 as gate dielectric is studied in detail. Different III-nitride (III-N) heterostructures (AlGaN/GaN and AlInN/GaN) with/without GaN cap layer were used for fabricating these MIS devices. Interestingly, for all the sets of devices, a positive shift in $V_{\mathrm{ Th}}$ was observed initially with a increase in $t_{\mathrm{ ox}}$ , followed by a negative shift of the same. A comprehensive analytical model has been proposed to explain the variation of $V_{\mathrm{ Th}}$ with $t_{\mathrm{ ox}}$ and has been shown to match the experimental data for MIS-HEMTs fabricated on different heterostructures and with different values of $t_{\mathrm{ ox}}$ . This model allows the extraction of different charge components in the oxide or at oxide/III-N interface. Normally OFF AlInN/GaN MIS-HEMTs with $V_{\mathrm{ Th}}$ of +0.67 V have been demonstrated with the optimized $t_{\mathrm{ ox}}$ of sputtered Al2O3.read more
Citations
More filters
Journal ArticleDOI
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
TL;DR: In this article, the authors present a pedagogical presentation of the models of electronic states, their effects on device performance, and the presently accepted approaches to minimize their effects such as surface passivation and insulated gate technologies.
Journal ArticleDOI
Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies
P. Vigneshwara Raja,Mohamed Bouslama,Sujan Sarkar,Khade Ramdas Pandurang,Jean-Christophe Nallatamby,Nandita DasGupta,Amitava DasGupta +6 more
TL;DR: In this article, drain current transient spectroscopy (DCTS) and low-frequency (LF) output admittance (Y}_{{22}}$ ) dispersion techniques were used to identify trap locations and types.
Journal ArticleDOI
Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO 2 Gate Dielectric Annealed in Nitrogen
Yu-Shyan Lin,Chi-Che Lu +1 more
TL;DR: In this article, an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) using a high-k TiO2 gate insulator is demonstrated.
Journal ArticleDOI
Low-Temperature ICP-CVD SiN x as Gate Dielectric for GaN-Based MIS-HEMTs
TL;DR: SiN x deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique at low temperature (70 °C) was investigated as gate dielectric for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) as mentioned in this paper.
Journal ArticleDOI
Positive Shift in Threshold Voltage Induced by CuO and NiO x Gate in AlGaN/GaN HEMTs
Yi Li,Yaxiong Guo,Kai Zhang,Xuming Zou,Jingli Wang,Yuechan Kong,Tangsheng Chen,Changzhong Jiang,Guojia Fang,Chuansheng Liu,Lei Liao +10 more
TL;DR: In this paper, the threshold voltage of an AlGaN/GaN HEMT with two kinds of p-type metal-oxide (CuO and NiO x ) gates has been fabricated.
References
More filters
Journal ArticleDOI
GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Journal ArticleDOI
Very-high power density AlGaN/GaN HEMTs
TL;DR: A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.
Journal ArticleDOI
GaN Power Transistors on Si Substrates for Switching Applications
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: In this article, GaN power transistors on Si substrates for power switching application are reported, and current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate.
GaN Power Transistors on Si Substrates for Switching Applications Hybrid MOS-FET transistor devices with low on-resistance, high hold-voltages and high breakdown voltage promise to provide high-power, low-loss operation for switching applications.
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance and a high breakdown voltage as well as one of the cost-effective solutions.
Journal ArticleDOI
First-principles calculations of intrinsic defects in Al 2 O 3
TL;DR: In this article, first principles plane-wave pseudopotential calculations were performed to study electronic structures, structural relaxation, and energetics of intrinsic vacancies and interstitials in the band gap.