Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering
13 Apr 2016-Vol. 1724, Iss: 1, pp 020073
TL;DR: In this paper, the effect of sputtering power on the electrical and structural properties of Ru films was investigated experimentally using high-resolution X-ray diffraction and atomic force microscopy (AFM).
Abstract: Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).
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05 Jul 2020
TL;DR: In this paper, the radio frequency (RF) magnetron sputtering (MS) method was utilized to fabricate multiple sets of the iron film samples under different sputtering powers, and with the help of X-ray diffraction, scanning electron microscopy, atomic force microscopy (AFM) and vibrating sample magnetometer (VSM), how the sputtering power affected the structure, morphology and magnetic properties of the IR film was studied.
Abstract: In this paper, the radio frequency (RF) magnetron sputtering (MS) method was utilized to fabricate multiple sets of the iron film samples under different sputtering powers. With the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and vibrating sample magnetometer (VSM), how the sputtering power affected the structure, morphology and magnetic properties of the iron film was studied. XRD results showed that all Fe films have a polycrystalline bcc structure and (110) preferred orientation. According to the Bragg equation calculation, the larger the sputtering power, the larger the average grain size, which is consistent with the results of AFM particle size analysis. The main reason is that the sputtering power affects the grain growth mode. As the sputtering power increases, it gradually changes from a small island-like growth to a thick columnar growth. However, from the surface morphology and height profile, we saw that the iron film deposited under 230 W had the most uniform grain size distribution and the grain size was relatively small. This is why thin films deposited under this condition have the best soft magnetic properties. The saturation magnetization (Ms) reaches 1566 emu/cm3, coercivity (Hc) is 112 Oe, and squareness ratio (Mr/Ms) is 0.40. Therefore, iron film prepared under 230 W has good comprehensive properties (highest Ms, lower Hc and Mr/Ms) that provide an experimental basis for further thin film research work.
19 citations
TL;DR: The electrodeposited Cu, Cu-SiC FGC has the potential to serve as an inexpensive touch surface alternative for the healthcare industries because of its antibacterial and anti-adhesion properties.
5 citations
TL;DR: The microstructure evolution of Ru compacts with sintering time was investigated by electron backscatter diffraction (EBSD) and field emission scanning electron microscope (FSEM) as mentioned in this paper.
Abstract: Ru compacts with mean grain size of 4~5 μm were prepared by vacuum hot pressing (VHP), and the compacts with the maximum density of 12.2 g/cm was obtained with sintering time of 2 h. X-ray diffractometer (XRD) revealed that there was a texture change with sintering time. The microstructure of Ru compacts was observed by electron backscatter diffraction (EBSD) and field emission scanning electron microscope (FSEM). Thus, the microstructure evolution with sintering time were discussed.
1 citations
TL;DR: In this article , Ru targets were prepared by vacuum hot pressing with two different Ru powders with different morphologies and particle sizes, and Ru films were then deposited on SiO2/Si(100) substrates by RF magnetron sputtering at substrate temperatures ranging from room temperature (RT, about 25 °C) to 400 C.
Abstract: Ruthenium (Ru) exhibits excellent electrical properties at the nanoscale, and it can be used to replace Al and Cu as interconnect metals for nodes of 20 nm and below in the next generation of integrated circuits. Ru interconnects mainly exist in the form of films, and Ru targets are used as the key raw materials to produce these films. Establishing whether there is an inheritance relationship in terms of microstructure and electrical properties between these targets and the resultant films will determine whether these are important factors for improving the electrical properties of Ru films and will provide directional guidance for the preparation of Ru targets. In this work, Ru targets were prepared by vacuum hot pressing with two different Ru powders with different morphologies and particle sizes. Ru films were then deposited on SiO2/Si(100) substrates by RF magnetron sputtering at substrate temperatures ranging from room temperature (RT, about 25 °C) to 400 °C. The microstructures and electrical properties of the Ru targets and Ru films were investigated by high-resolution field-emission scanning electron microscopy, x ray diffraction, atomic force microscopy, four-probe resistivity measurements, and digital conductivity tests. The results showed that Ru targets with a more uniform microstructure had lower resistivity; furthermore, Ru films deposited by Ru targets with a more uniform microstructure were preferentially crystallized, and they also had a faster average deposition rate, a smaller average grain size, and lower surface roughness. However, no correlation was found between the crystal orientations of the Ru films and Ru targets.
References
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TL;DR: In this paper, a ruthenium metal-contact RF microelectromechanical system switch based on a corrugated silicon oxide/silicon nitride diaphragm is presented.
Abstract: This paper presents a ruthenium metal-contact RF microelectromechanical system switch based on a corrugated silicon oxide/silicon nitride diaphragm. The corrugations are designed to substantially reduce the influence of the fabrication-induced stress in the membrane, resulting in a highly insensitive design to process parameter variations. Furthermore, a novel multilayer metal-contact concept, comprising a 50-nm chromium/50-nm ruthenium/500-nm gold/50-nm ruthenium structure, is introduced to improve the contact reliability by having a hard-metal surface of ruthenium without substantial compromise in the contact and transmission-line resistances, which is shown by theoretical analysis of the contact physics and confirmed by measurement results. The contact resistance of the novel metallization stack is investigated for different contact pressures and is compared to pure-gold contacts. The contact reliability is investigated for different dc signal currents. At a measurement current of 1.6 mA, the Ru-Au-Ru contacts have an average lifetime of about 100 million cycles, whereas the Au-Au contacts reach 24 million cycles only. For larger signal currents, the metal contacts have proven to be more robust over the Au-Au contacts by a factor of ten. The measured pull-in voltage is reduced significantly from 61 V for flat diaphragm to 36 V for corrugated diaphragm with the introduction of corrugation. The measured RF isolation with a nominal contact separation of 5 mum is better than -30 dB up to 4 GHz and still -21 dB at 15 GHz, whereas the insertion loss of the fully packaged switch including its transmission line is about -0.7 dB up to 4 GHz and -2.8 dB at 15 GHz.
78 citations
TL;DR: In this paper, high-resolution X-ray diffraction measurements around the (0, 0, 2) diffraction peak were obtained to characterize the microstructure and morphology of buried layers and the interfacial structure of Ru films on Si substrates prepared by radio frequency magnetron sputtering technique.
11 citations
01 Oct 2015-Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems
TL;DR: In this paper, the power handling capabilities of metal contact switches are discussed and the appropriate choice of configuration (inline or offline) reduces the probability of self actuation and allows high input RF power.
Abstract: This paper outlines the power handling capabilities of metal contact switches The appropriate choice of configuration (inline or offline) reduces the probability of self actuation and allows high input RF power The shape and position of the contact spots decides the current density and accordingly allows the permissible amount of power to flow without causing any failure These two design aspects are taken into consideration and accordingly switch is designed with an insertion: ?01086 dB, isolation: ?325 dB and return loss: ?1807 dB The pull in voltage of the beam is simulated to 19 V Reinforcing of the beam is done to avoid curling of beam, self actuation at high power and to provide optimum contact force (105 µN) in order to reduce contact resistance The power to be handled by the switch is 156 W, when no temperature considerations are taken into account
5 citations