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Journal ArticleDOI

Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure

30 Sep 2008-Journal of Semiconductor Technology and Science (The Institute of Electronics Engineers of Korea)-Vol. 8, Iss: 3, pp 239-243
TL;DR: The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process and the absorption of Bi-Sb thin film structure was improved to reach 97% at near-infrared region.
Abstract: In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of 500 °C, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The mor-phology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED’s and optical switches.
References
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Journal ArticleDOI
21 May 1999-Science
TL;DR: Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing, and clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films.
Abstract: Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing. Magnetoresistance up to 250 percent at 300 kelvin and 380,000 percent at 5 kelvin as well as clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films. A hybrid structure was also made that showed a large magnetoresistive effect of 30 percent at 200 oersted and a field sensitivity of 0.2 percent magnetoresistance per oersted at room temperature.

473 citations

Journal ArticleDOI
TL;DR: Very large magnetoresistance with ratios as much as 1500 at 5 K and 2.9 at 300 K under 5 T, Shubnikov-de Haas oscillations, and finite-size effects have been observed.
Abstract: Trigonal-axis oriented single-crystal Bi thin films have been made by electrodeposition followed by suitable annealing. Very large magnetoresistance with ratios as much as 1500 at 5 K and 2.9 at 300 K under 5 T, Shubnikov--de Haas oscillations, and finite-size effects have been observed.

127 citations

Journal ArticleDOI
TL;DR: In this paper, the electrical resistivity, temperature coefficient of resistivity and Hall constant and thermoelectric power of antimony films were measured in situ and it was shown that holes were the majority carriers in these films.

12 citations

Journal ArticleDOI
TL;DR: In this paper, electrical resistivity and thermoelectric power are measured as a function of the film thickness on vacuum deposited antimony and bismuth films, and the experimental results are in good agreement with the approximate form of the size effect theory of Fuchs-Sondheimer.
Abstract: The electrical resistivity and thermoelectric power are measured as a function of the film thickness on vacuum deposited antimony and bismuth films. The experimental results are in good agreement with the approximate form of the size effect theory of Fuchs-Sondheimer. There is some indication of oscillation in the resistivity data of bismuth films in the range of small thicknesses (20 to 70 nm), which may be related to the quantum size effect. However, no such oscillation is observed in antimony films. The resistivity and the thermoelectric power approach the values close to those of well-ordered bulk antimony and bismuth when extrapolated to infinite thickness. The thin films are used for the detection of short laser pulses. Pulses from a Q-switched Nd-glass laser are detected. A rise time (i.e. from 10 to 90%) of about 10 ns and a decay time (i.e. 90 to 10%) of about 60 ns is measured. La resistivite electrique et la pussiance thermoelectrique sont mesurees en fonction de l'epaisseur du film sur des depots sous vide de films d'antimoine et de bismuth les resultats experimentaux sont en bon accord avec la forme approximative de la theorie de l'effet de grandeur de Fuchs-Sondheimer. Des indications de l'oscillation de la resistivite ont ete observes dans le cas de films de bismuth de petite epaisseur (20 a 70 nm), qui peuvent etre liees a l'effet de grandeur quantique. Aucune oscillation semblable n'a ete observee dans le cas des films d'antimoine. Les valeurs de la resistivite et de la puissance thermoelectrique s'approchent guand elles sont extrapolees pour une epaisseur infinie, de celles de grandes quantites bien ordonnees d'antimoine et de bismuth. Les films minces ont ete utilises pour la detection de courtes impulsions d'un laser verre-Nd a controle Q. Un temps de croissance (c.a d. de 10 a 90%) etait d'environ 10 ns, et le temps de decroissance (c. a. d. de 90 a 10%) etait d'environ 90 ns.

11 citations

Journal ArticleDOI
01 Mar 1981-Vacuum
TL;DR: In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.

9 citations