Effect of UV irradiation on solution processed low voltage flexible organic field-effect transistors
TL;DR: In this article, the effect of ultra-violet (UV) irradiation on the electrical characteristics of solution processed flexible TIPS-pentacene organic field effect transistors (OFETs) has been investigated.
About: This article is published in Superlattices and Microstructures.The article was published on 2017-09-01. It has received 9 citations till now. The article focuses on the topics: Threshold voltage & Irradiation.
Citations
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TL;DR: In this article, an organic semiconductor gas sensor on vertical channel design was proposed to exhibit an ultra-sensitive response to nitric oxide gas (10 ppb) at room temperature.
Abstract: In this work, we successfully proposed an organic semiconductor gas sensor on vertical channel design to exhibit an ultra-sensitive response to nitric oxide gas (10 ppb) at room temperature. The effect of ultra-violet (UV) irradiation (λ =365 nm) on sensing performance of solution processed vertical organic diode (VOD) has been investigated. After implementing a simple and low-cost UV treatment, the sensing response of PBDTTT-C-T based NO sensor is significantly enhanced from 93 % to 233 % at 1 ppm. In addition, we also introduced a new strategy to tune the selectivity of organic gas sensors by using photochromic molecule and organic semiconductor blends. With the 1 Wt% spiropyran dopant, the sensor response to ammonia can be considerably suppressed, hence the response ratio between NO and ammonia can be improved from 2.9 to 16.0, indicating an improved selectivity. The proposed ultrasensitive and selective NO gas sensor have great potential for exhaled breath detection (asthma patients) and environmental monitoring.
13 citations
TL;DR: In this article, a flexible ZnO nanowire (NW) UV sensor is presented as an exemplary verification for investigating the effects of substrate morphology on reliability of flexible electronic devices.
Abstract: The major problem in the fabrication of electronic devices on plastic substrate arises from the mismatch and weak physical bonding between inorganic semiconductor crystal and the organic plastics, so the electrical performance stability under mechanical stress is an essential factor affecting the practical application of flexible electronic sensors. In this paper, a flexible ZnO nanowire (NW) UV sensor is presented as an exemplary verification for investigating the effects of substrate morphology on reliability of flexible electronic devices. Sensors on ordinary smooth polyimide (PI) substrate have cracked during the device fabrication process due to the residual stress caused by temperature, humidity, etc. These cracks were short pieces and randomly distributed, so they may not significantly affect the device performance, but after mechanical bending, cracks that penetrating the electrodes were generated and caused electric contact failure. Although improving the ZnO seed layer quality could reduce the cracking and buckling that formed during device fabrication, it would not prevent cracking during mechanical bending. In a 3 × 3 sensor array, only one sensor survived after bending. Device failed when the bending angle larger than − 40° or 60°. On the contrary, device fabricated on textured PI substrates exhibited much better electrical stability. All the sensors remained their original performances after mechanical bending in a 3 × 3 sensor array. The light–dark current ratios kept in the level of 105 under the 365 nm UV light of 15 mW/cm2. The bending angle varied from − 80° to 80°. The enhancement of electrical stability was because that textured substrate could tolerate more stress than smooth substrate to prevent the film from cracking and at the same time it could increase the contact area between ZnO film and PI substrate, which improved the interfacial bonding strength and delayed the local strain of the film.
7 citations
TL;DR: Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance in this paper, where the pinholes formation in PVP layer guides the confined growth and dissolution of Ag conductive filament (CF) in the bilayer structure.
6 citations
01 Nov 2018
TL;DR: In this article, the authors estimate the UV characteristics of the buried-gate GaN OPFET models and analyze the results based on the photoconductive and the photovoltaic effects.
Abstract: We estimate the UV (Ultraviolet) characteristics of the buried-gate GaN OPFET (Optical Field Effect Transistor) models and analyze the results based on the photoconductive and the photovoltaic effects. The various detector parameters are evaluated. Two distinct illumination models are considered for the present work (the front-illuminated and the back-illuminated buried-gate OPFETs). The device is biased in the saturation region of operation with the gate shorted to the source and is studied under different radiation flux densities. Both the illumination models exhibit significantly high UV response with the front-illuminated OPFET showing superior performance at the lower flux densities whereas the back-illuminated model showing better response at the higher flux density with a compromise in the bandwidth. The results demonstrate that the devices under study exhibit greater performance potential than many of the photo detectors reported in the literature under review. The detectors shall greatly contribute towards UV communication and other related applications.
5 citations
Cites background from "Effect of UV irradiation on solutio..."
...The GaN FETs show good prospects for UV applications....
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...[20] Y. Dai, B. Yu, Y. Ye, P. Wu, H. Meng, L. Dai, and G. Qin, “Highperformance CdSe nanobelt based MESFETs and their application in photodetection,” Journal of Materials Chemistry, vol. 22, pp. 18442- 18446, July 2012....
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...[24] Y. H. Byun, M. S. Shur, A. Peczalski, and F. L. Schuermeyer, “Gate- voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs,” IEEE Transactions on Electron Devices, vol. 35, pp. 1241-1246, Aug. 1988....
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...Organic FETs [34] Responsivity of 43 mA/W under 1....
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...Also, MESFETs can be easily fabricated and integrated [20]....
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TL;DR: In this paper, the crucial role of molecular weight of the polymer dielectric in regulating the electrical performance and photo-response of TIPS-pentacene OFETs has been explored using poly(vinyl alcohol) (PVA) as the polymer layer.
4 citations
References
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TL;DR: In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.
Abstract: Organic electron-transporting materials are essential for the fabrication of organic p-n junctions, photovoltaic cells, n-channel field-effect transistors, and complementary logic circuits. Rylene diimides are a robust, versatile class of polycyclic aromatic electron-transport materials with excellent thermal and oxidative stability, high electron affinities, and, in many cases, high electron mobilities; they are, therefore, promising candidates for a variety of organic electronics applications. In this review, recent developments in the area of high-electron-mobility diimides based on rylenes and related aromatic cores, particularly perylene- and naphthalene-diimide-based small molecules and polymers, for application in high-performance organic field-effect transistors and photovoltaic cells are summarized and analyzed.
1,494 citations
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Abstract: In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band‐gap semiconductors the most promising ...
1,308 citations
TL;DR: In this paper, a general review of the advances in widebandgap semiconductor photodetectors is presented, including SiC, diamond, III-nitrides and ZnS.
Abstract: Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.
1,194 citations
TL;DR: This tutorial review intends to provide readers with a deep understanding for the future design of high-quality OFET gas sensors for potential uses.
Abstract: Organic field-effect transistors (OFETs) are one of the key components of modern organic electronics. While the past several decades have witnessed huge successes in high-performance OFETs, their sophisticated functionalization with regard to the responses towards external stimulations has also aroused increasing attention and become an important field of general concern. This is promoted by the inherent merits of organic semiconductors, including considerable variety in molecular design, low cost, light weight, mechanical flexibility, and solution processability, as well as by the intrinsic advantages of OFETs including multiparameter accessibility and ease of large-scale manufacturing, which provide OFETs with great potential as portable yet reliable sensors offering high sensitivity, selectivity, and expeditious responses. With special emphases on the works achieved since 2009, this tutorial review focuses on OFET-based gas sensors. The working principles of this type of gas sensors are discussed in detail, the state-of-the-art protocols developed for high-performance gas sensing are highlighted, and the advanced gas discrimination systems in terms of sensory arrays of OFETs are also introduced. This tutorial review intends to provide readers with a deep understanding for the future design of high-quality OFET gas sensors for potential uses.
351 citations
TL;DR: This study of electro-mechanical properties suggests that solution-processable organic semiconductors are suitable for applications in flexible electronics, provided that integration with other important technological advances, such as device scalability and low-voltage operation, is achieved in the future.
Abstract: Organic electronic materials are promising candidates for applications in which flexible electronic devices are required. Yi et al. demonstrate a high-performance, flexible organic transistor based on solution-processed small molecules that can be fabricated with a simple, low-cost process.
290 citations