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Journal ArticleDOI

Effect of vacuum annealing on the electrical properties of Zn3P2 thin films

01 Feb 1988-Journal of Materials Science Letters (Kluwer Academic Publishers)-Vol. 7, Iss: 2, pp 125-129
About: This article is published in Journal of Materials Science Letters.The article was published on 1988-02-01. It has received 3 citations till now. The article focuses on the topics: Carbon film & Thin film.
Citations
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Journal ArticleDOI
TL;DR: X-ray diffraction patterns showed that the as-deposited films and those annealing at temperatures less than 623K exhibit amorphous structure, while the films annealed at 624K showed tetragonal polycrystalline structure.

1 citations

Journal ArticleDOI
TL;DR: In this article, the effects of matrix mechanical properties and phase geometry of ternary composites of PP/Mg(OH)2/EPR on the tensile elastic modulus (E), yield strength (oy), and strain (ey) were investigated.
Abstract: The effects of matrix mechanical properties and phase geometry of ternary composites of PP/Mg(OH)2/EPR on the tensile elastic modulus (E), yield strength (oy) and strain (ey) were investigated. Polypropylene (PP) of high and low isotacticity and PP-ethylene copolymer were used as matrices. The total filler concentration consisted of 30 vol.% Mg(OH)2 plus EPR elastomer concentrations from 0 to 20 vol.%. Control of the adhesion between phases and morphology permitted attainment of the two limiting cases of complete separation of the filler and elastomer and complete encapsulation of the filler by the elastomer. The decrease in Ε with the elastomer concentration can be described using existing composite models and a Finite Element Analysis (F.E.A.). The observed changes in a y with EPR concentration were in agreement with the limits of the yield strength predicted using a previously published model based on F.E.A. and percolation concepts. In all the systems studied, the addition of EPR results in the development of ductile modes of failure and a substantial increase in the yield strain.
References
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01 Jan 1940
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Abstract: 1. Introduction 2. Theory of Electrons in a Non-Crystalline Medium 3. Phonons and Polarons 4. The Fermi Glass and the Anderson Transition 5. Liquid Metals and Semimetals 6. Non-Crystalline Semiconductors 7. Tetrahedrally-Bonded Semiconductors - Amorphous Germanium and Silicon 8. Aresnic and Other Three-Fold Co-ordinated Materials 9. Chalcogenide and Other Glasses 10. Selenium, Tellurium, and their Alloys

8,188 citations


"Effect of vacuum annealing on the e..." refers methods or result in this paper

  • ...have been plotted in Figs 2 and 3 for the annealed films as log o'T 1/2 against T -~/4 and from the linearity of this plot it is found that the results are in accordance with Mott's expression [ 9 ]...

    [...]

  • ...Two other parameters, R and W, the hopping distance and the average hopping energy, respectively, due to Mott [ 9 ] and Hill [12] are given as...

    [...]

Journal ArticleDOI
TL;DR: In this article, the authors examined the hopping conduction process under conditions of high temperatures, high fields and a non-uniform distribution of hopping sites and showed that the field dependence of the Mott T −¼ law can yield information about the trap density distribution.
Abstract: The hopping conduction process is examined under conditions of high temperatures, high fields and a non-uniform distribution of hopping sites. It is shown that the field dependence of the Mott T −¼ law can yield information about the trap density distribution. A new mechanism of conduction, considering the emission of charge carriers from donor centres into traps, is examined and shown to yield a characteristic of ln σ∞T −1/7. The electrical properties of amorphous carbon and germanium are examined. It is shown that carbon exhibits a pure hopping process whilst germanium shows the characteristics of donor emission into traps.

273 citations

Journal ArticleDOI
TL;DR: In this article, the growth and electrical properties of CuInS2 thin films are described and two deposition schemes, single and double source methods, are reported and data are presented indicating the effects of film and substrate temperature on the electrical characteristics (mobility, resistivity, and carrier concentration) of the films.
Abstract: The growth and electrical properties of CuInS2 thin films are described Two deposition schemes, single‐ and double‐source methods, are reported Data are presented indicating the effects of film and substrate temperature on the electrical characteristics (mobility, resistivity, and carrier concentration) of the films Both n‐ and p‐type films are reported, and the effects of sulfur concentrations are discussed Some postdeposition annealing effects are also detailed

150 citations